公开(公告)号：US20090259730A1

公开(公告)日：2009-10-15

申请号：US12067295

申请日：2006-09-25

申请人： Satoshi Machida ,  Atsunori Isozumi

发明人： Satoshi Machida ,  Atsunori Isozumi

IPC分类号： G06F15/16

CPC分类号： H04N7/17318 ,  H04N5/765 ,  H04N9/8042 ,  H04N9/8205 ,  H04N9/8715 ,  H04N21/2747 ,  H04N21/4334 ,  H04N21/4335 ,  H04N21/472 ,  H04N21/6581

摘要： A content storing system for allowing a storing apparatus, which has a limited size of storage capacity, to be effectively used to record content data. The content storing system includes a user terminal apparatus that records content data received from an external apparatus; and a server that is connected to the user terminal apparatus and that records the content data received from the external apparatus. The user terminal apparatus notifies the server that the content data has been recorded, and further issues, to the server, a delivery request for the content data that was recorded in a user storage apparatus. In response to the delivery request, the server determines, from the notification, that the content data has been recorded, and then the server transmits the requested content data to the user terminal apparatus.

摘要翻译： 一种用于允许有效地使用具有有限的存储容量的存储装置来记录内容数据的内容存储系统。 内容存储系统包括：用户终端装置，记录从外部装置接收的内容数据; 以及连接到用户终端设备并记录从外部设备接收的内容数据的服务器。 用户终端装置向服务器通知内容数据已经被记录，并且还向服务器发出记录在用户存储装置中的内容数据的发送请求。 响应于递送请求，服务器从通知确定已经记录了内容数据，然后服务器将请求的内容数据发送到用户终端设备。

公开(公告)号：US20080006765A1

公开(公告)日：2008-01-10

申请号：US11891107

申请日：2007-08-09

申请人： Satoshi Machida

发明人： Satoshi Machida

IPC分类号： H01J40/14

CPC分类号： H04N5/3745 ,  H04N5/363 ,  H04N5/37452

摘要： To provide a photoelectric conversion device with low noise at low cost. The photoelectric conversion device includes: a plurality of photoelectric conversion circuits whose output potentials change according to an amount of incident light; a plurality of reset circuits each connected to an output of each of the photoelectric conversion circuits; a plurality of amplification circuits for amplifying the output potentials of the photoelectric conversion circuits, the amplification circuits each being connected to the output of each of the photoelectric conversion circuits; a plurality of signal read circuits for reading the outputs from the amplification circuits; and a plurality of holding circuits for temporarily holding the read outputs from the amplification circuits.

摘要翻译： 以低成本提供低噪音的光电转换装置。 光电转换装置包括：多个光电转换电路，其输出电位根据入射光量而变化; 多个复位电路，各自连接到每个光电转换电路的输出; 多个放大电路，用于放大光电转换电路的输出电位，各放大电路各自连接到每个光电转换电路的输出端; 用于读取放大电路的输出的多个信号读取电路; 以及用于暂时保持来自放大电路的读取输出的多个保持电路。

公开(公告)号：US07312019B2

公开(公告)日：2007-12-25

申请号：US11066495

申请日：2005-02-28

申请人： Suguru Sasaki ,  Satoshi Machida ,  Takashi Taguchi

发明人： Suguru Sasaki ,  Satoshi Machida ,  Takashi Taguchi

IPC分类号： H01L21/027

CPC分类号： G02B5/1857 ,  G03F7/0005 ,  G03F7/0035

摘要： A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

摘要翻译： 公开了一种形成线性光栅的方法。 当形成覆盖基板的某些表面区域的第一抗蚀剂图案时，掩模图案位置移动，并且形成第一抗蚀剂图案，使得即使当定位错误发生时，目标区域中的沟槽也完全被第一抗蚀剂图案填充 。 蚀刻第一抗蚀剂图案的表面，并且将下抗蚀剂图案保留到与硅衬底的最上层步骤相同的水平。 此外，形成具有与第一抗蚀剂图案相同的图案的上抗蚀剂图案。 此时，掩模图案位置移动，并且调整曝光剂量使得上抗蚀剂图案的一个边缘位于下抗蚀剂图案上，另一边缘位于规定区域边界部分中。 下抗蚀剂图案和上抗蚀剂图案用作掩模以蚀刻硅衬底。

公开(公告)号：US07191324B2

公开(公告)日：2007-03-13

申请号：US10231178

申请日：2002-08-30

申请人： Satoshi Machida

发明人： Satoshi Machida

IPC分类号： G06F9/24

CPC分类号： H04L41/0886 ,  H04L41/0806

摘要： An automatic computer configuration system is disclosed wherein a portable terminal such as a portable telephone set which has been spread widely and is usually carried by a user can be used to automatically configure a computer suitably for a particular user. The automatic computer configuration system comprises a portable terminal and a computer connected to the portable terminal. The portable terminal stores unique computer configuration information to be used for configuration of a computer specified for a particular user. Upon login by a user, the computer communicates with the portable terminal to receive the computer configuration information stored in the portable terminal and automatically configures the computer itself based on the received computer configuration information. Upon logout, the computer transmits the latest computer configuration to the portable terminal and restores the configuration using computer configuration information used before the computer configuration information is rewritten with the unique computer configuration information received from the portable terminal, or restores a default configuration using default computer configuration information.

摘要翻译： 公开了一种自动计算机配置系统，其中诸如便携式电话机的便携式终端已被广泛传播并且通常由用户承载，可以用于为特定用户适当地自动配置计算机。 自动计算机配置系统包括便携式终端和连接到便携式终端的计算机。 便携式终端存储用于为特定用户指定的计算机的配置的唯一计算机配置信息。 在用户登录时，计算机与便携式终端通信以接收存储在便携式终端中的计算机配置信息，并且基于接收到的计算机配置信息自动配置计算机本身。 在注销时，计算机将最新的计算机配置发送到便携式终端，并且使用在从便携式终端接收到的唯一计算机配置信息重写计算机配置信息之前使用的计算机配置信息来恢复配置，或者使用默认计算机恢复默认配置 配置信息。

公开(公告)号：US07180199B2

公开(公告)日：2007-02-20

申请号：US11345288

申请日：2006-02-02

申请人： Satoshi Machida ,  Takashi Taguchi ,  Noboru Uchida ,  Suguru Sasaki

发明人： Satoshi Machida ,  Takashi Taguchi ,  Noboru Uchida ,  Suguru Sasaki

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

摘要翻译： 半导体器件包括具有第一表面和第二表面的半导体衬底和形成在半导体衬底的第一表面中并且具有第一折射率的第一层的第一多层叠结构膜， 所述第一层具有低于所述第一折射率的第二折射率，以及形成在所述第二层上并具有高于所述第二折射率的第三折射率的第三层，并且其中各层的厚度分别为厚度 （2N + 1）λ/（4n）计算，其中将用于检测第一多层叠结构膜的光的波长定义为λ，将各层的折射率定义为n，将N定义为0或 自然数。

公开(公告)号：US20060197237A1

公开(公告)日：2006-09-07

申请号：US11345288

申请日：2006-02-02

申请人： Satoshi Machida ,  Takashi Taguchi ,  Noboru Uchida ,  Suguru Sasaki

发明人： Satoshi Machida ,  Takashi Taguchi ,  Noboru Uchida ,  Suguru Sasaki

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

摘要翻译： 半导体器件包括具有第一表面和第二表面的半导体衬底和形成在半导体衬底的第一表面中并且具有第一折射率的第一层的第一多层叠结构膜， 所述第一层具有低于所述第一折射率的第二折射率，以及形成在所述第二层上并具有高于所述第二折射率的第三折射率的第三层，并且其中各层的厚度分别为厚度 （2N + 1）λ/（4n）计算，其中将用于检测第一多层叠结构膜的光的波长定义为λ，将各层的折射率定义为n，将N定义为0或 自然数。

公开(公告)号：US20060125946A1

公开(公告)日：2006-06-15

申请号：US11338769

申请日：2006-01-25

申请人： Masaaki Nishino ,  Masakatsu Takizawa ,  Norihisa Mitsuyu ,  Shuji Yamaguchi ,  Satoshi Machida

发明人： Masaaki Nishino ,  Masakatsu Takizawa ,  Norihisa Mitsuyu ,  Shuji Yamaguchi ,  Satoshi Machida

IPC分类号： H04N5/222

CPC分类号： H04M1/0218 ,  H04M1/0216 ,  H04M2250/16 ,  H04N5/2251 ,  H04N5/23293 ,  H04N5/782 ,  H04N7/142

摘要： The information terminal body may be designed to foldably pivot a pair of flat cases each having a display unit through a hinge which is equipped with a photographing optical system for the camera function unit of which optical axis of lens is perpendicular to an axial center of the hinge. The display units display information from communication channels and images taken in by the camera. The cases may have the display units such that the display units face outside in a folded state. At least one of the two display units may be a finder for photographers, while the other may be a finder for the subject persons. The terminal is equipped with a shutter button and a terminal operation button. The terminal operation button works also as a shutter button. The information terminal is also equipped with a viewfinder for the camera lens system.

公开(公告)号：US20050196709A1

公开(公告)日：2005-09-08

申请号：US11066495

申请日：2005-02-28

申请人： Suguru Sasaki ,  Satoshi Machida ,  Takashi Taguchi

发明人： Suguru Sasaki ,  Satoshi Machida ,  Takashi Taguchi

IPC分类号： G02B5/18

CPC分类号： G02B5/1857 ,  G03F7/0005 ,  G03F7/0035

摘要： A method of forming a linear grating is disclosed. When forming a first resist pattern covering certain surface regions of a substrate, the mask pattern position is shifted and the first resist pattern is formed such that the trench in the target region is completely filled with the first resist pattern even when an error in positioning occurs. The surface of the first resist pattern is etched, and a lower resist pattern is left to the same level as the uppermost step of the silicon substrate. On top of this, an upper resist pattern having the same pattern as the first resist pattern is formed. At this time, the mask pattern position is shifted and the exposure dose is adjusted such that one edge of the upper resist pattern is positioned on the lower resist pattern, and the other edge is positioned in a prescribed region border portion. The lower resist pattern and upper resist pattern are used as a mask to etch the silicon substrate.

摘要翻译： 公开了一种形成线性光栅的方法。 当形成覆盖基板的某些表面区域的第一抗蚀剂图案时，掩模图案位置移动，并且形成第一抗蚀剂图案，使得即使当定位错误发生时，目标区域中的沟槽也完全被第一抗蚀剂图案填充 。 蚀刻第一抗蚀剂图案的表面，并且将下抗蚀剂图案保留到与硅衬底的最上层步骤相同的水平。 此外，形成具有与第一抗蚀剂图案相同的图案的上抗蚀剂图案。 此时，掩模图案位置移动，并且调整曝光剂量使得上抗蚀剂图案的一个边缘位于下抗蚀剂图案上，另一边缘位于规定区域边界部分中。 下抗蚀剂图案和上抗蚀剂图案用作掩模以蚀刻硅衬底。

公开(公告)号：US06589385B2

公开(公告)日：2003-07-08

申请号：US10196379

申请日：2002-07-17

申请人： Akiyuki Minami ,  Satoshi Machida

发明人： Akiyuki Minami ,  Satoshi Machida

IPC分类号： H01L2100

CPC分类号： G03F7/70633 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.

公开(公告)号：US06559063B2

公开(公告)日：2003-05-06

申请号：US10061332

申请日：2002-02-04

申请人： Akiyuki Minami ,  Satoshi Machida

发明人： Akiyuki Minami ,  Satoshi Machida

IPC分类号： H01L2100

CPC分类号： G03F7/70633 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.