Abstract:
A scanning circuit has path switches connected between a plurality of data flip-flop circuits of the scanning circuit for sequentially reading an output signal in synchronism with a clock. A plurality of control signal lines select the path switches to arbitrarily skip reading of the flip-flop circuits that do not require the scanning circuit and always fix a potential of the skipped data flip-flop circuit. Only the arbitrary data is read, and in the case where unnecessary data exists, reading is skipped, to thereby increase the read rate.
Abstract:
A signal processing circuit has a sample/hold circuit for sampling an input signal comprised of a first signal and a second signal and for holding the first signal. The first signal comprises an optical signal obtained due to storage of electric charges generated due to light incident upon a photoelectric converter, and the second signal comprises a reference signal obtained due to resetting of the photoelectric converter. A subtracter receives an output signal of the sample/hold circuit and the input signal and obtains a difference between the output signal of the sample/hold circuit and the input signal. A voltage clamp circuit clamps a part or all of an output signal from the subtracter.
Abstract:
A photoelectric converter capable of reducing random noise comprises a photoelectric conversion circuit for generating an optical signal in correspondence to incident light, a reset circuit connected to an output terminal of the photoelectric conversion circuit, and an amplification circuit connected to output terminals of the photoelectric conversion circuit and the reset circuit. An electric charge transfer unit has one terminal connected to an output terminal of the amplification circuit and another terminal connected to a capacitor. A source follower amplifier has a gate connected to the electric charge transfer unit and the capacitor, and a channel selection circuit is connected to a source of the source follower amplifier. A common signal line is connected to an output terminal of the channel selection circuit, a first current source is connected to the common signal line, and a second current source is connected to the source of the source follower.
Abstract:
A work vehicle includes an engine, a PTO shaft driven by power from the engine, an operator's seat, an operator's presence sensor for detecting presence/absence of an operator at the operator's seat, and an automatic engine stop unit operable to automatically stop the engine in response to detection of the operator's absence at the operator's seat. The work vehicle includes a utility member for the vehicle selectively movable between a use position and a non-use position, a non-use state detecting sensor for detecting movement of the utility member to the non-use position, and an override unit operable to override the automatic engine stop function of the automatic engine stop unit, the override unit providing an override signal to the automatic engine stop unit in response to detection by the non-use state detecting sensor of the movement of the utility member to the non-use position.
Abstract:
A semiconductor device has a transparent dielectric substrate such as a sapphire substrate. To enable fabrication equipment to detect the presence of the substrate optically, the back surface of the substrate is coated with a triple-layer light-reflecting film, preferably a film in which a silicon oxide or silicon nitride layer is sandwiched between polycrystalline silicon layers. This structure provides high reflectance with a combined film thickness of less than half a micrometer.
Abstract:
To provide a photoelectric conversion device having a high S/N ratio at a low cost. The photoelectric conversion device includes a light-receiving element that includes: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type formed in the first semiconductor region; and a gate electrode formed close to the second semiconductor region through an insulator. In the photoelectric conversion device, a surface state of the first semiconductor region below the gate electrode can be controlled between two states consisting of an inversion state and an: accumulation state.
Abstract:
To provide an Image sensor for resolving a problem in that a transverse streak Is caused on a read image. The image sensor IC includes: a plurality of photoelectric conversion elements; a plurality of reset units for initializing the photoelectric conversion elements, which are respectively connected with the photoelectric conversion elements; a reference voltage circuit for generating a reset voltage supplied to the reset means; and a low pass filter provided between the reset units and the reference voltage circuit.
Abstract:
To eliminate after-image due to residual charges to provide an output form that is easy to obtain effective on-light output. The outputs of photo-diodes 1 are read out as sequential signal outputs on a common signal line 15 through connected amplifiers 3, and two states of before and after resetting the photo-diodes 1 are outputted in order for each light receiving element.
Abstract:
According to the present invention, there is provided an image sensor for receiving light reflected from an original copy on which the light has been irradiated and for converting the received light into electrical signals, the image sensor having a simple configuration, no residual image, a small fluctuation in the dark outputs, and a good S/N ratio. In order to achieve such an image sensor, an output terminal of a photodiode is reset to a constant voltage, and an image signal output of the photodiode and the reference voltage output immediately after the photodiode is reset are performed succeedingly, using a clamping circuit.
Abstract:
A resist mark for measuring the accuracy of overlay of a photomask disposed on a semiconductor wafer, includes a first measurement mark having a first opening, formed on the substrate, an intermediate layer formed on the first measurement mark and in the first opening, a frame-shaped second measurement mark formed on the intermediate layer, and a third measurement mark that is spaced from the second measurement mark toward the outside, formed on the intermediate layer. The second measurement mark has a width which is short enough not to be influenced by a deformation caused by the thermal flow phenomenon.