摘要:
A balanced input inverter circuit includes a first P-type MOS transistor including a gate terminal connected to an input, a source terminal connected to a first power source potential, and a drain terminal connected to an output, a first N-type MOS transistor including a gate terminal connected to the input, a drain terminal connected to the output, and a source terminal connected to a second power source potential, a first inverter circuit including an input terminal connected to an inverted input, and an output terminal connected to a back gate terminal of the first N-type MOS transistor, a first diode connected between the first power source potential and a first power source terminal of the first inverter circuit, a second inverter circuit including an input terminal connected to the inverted input, and an output terminal connected to a back gate terminal of the first P-type MOS transistor, and a second diode connected between the second power source potential and a second power source terminal of the second inverter circuit.
摘要:
An integrated circuit includes a trimming signal creating section, disposed downstream of a trimming circuit in which a number of fuses are arranged in alignment, creating a trimming signal corresponding to the trimming value on the basis of a signal output from said trimming circuit and arranges blown object fuses such that every two of the blown object fuses are interposed at least one un-blown fuses in the trimming circuit. An efficient arrangement of blowing points in addition to the above arrangement of blown object fuses can reduce the area occupied by the trimming circuit.
摘要:
In a chart of molecular weight distribution measured of a toner, i) the toner has a main peak in the region of molecular weight of 16,000 to 60,000, and ii) where the molecular weight at the main peak is represented by M1, and where the height at the molecular weight M1 is represented by H(M1), the height at a molecular weight of 4,000 by H(4000) and the height at a molecular weight of 15,000 by H(15000), the H(4000), the H(15000) and the H(M1) satisfy a specific proportion. The toner has a weight-average molecular weight (Mw) of 15,000 to 80,000, and, in an endothermic chart, i) the toner has an endothermic main peak in the range of 40 to 1300C, and ii) the calorimetric integral value represented by the peak area of the endothermic main peak is 10 to 35 J per 1 g of the toner.
摘要:
A toner is provided which is excellent in low-temperature fixability and offset resistance, has a wide fixing temperature range, provides fixed images with high gloss, and can form toner images having high quality. The toner is composed of toner particles having toner base particles each containing a binder resin and a colorant. When the viscosities of each of the toner particles measured at 100° C. and 110° C. by a flow tester heat-up method are represented by η100 (Pa·s) and η110 (Pa·s), respectively, an average variation in viscosity AηT represented by the following equation (1) satisfies the relationship of 0≧AηT≧−0.064: AηT=(log(η110)−log(η100)/(110−100); and (1) η100 is 15,000 to 40,000 Pa·s.
摘要:
An image forming system comprising a plurality of image forming apparatuses interconnected via a network, wherein an image forming apparatus is capable of transmitting image data to another image forming apparatus, and the image forming apparatus capable of transmitting the image data comprising: a transmitter that transmits image data to another image forming apparatus; a job log information storage; and a job administrator that gives a job ID to job log information indicating a job executed on the image data then stores the job log information in said job information storage, and gives a job ID that is the same as or related to the job ID given to the job log information, to the image data to be transmitted by said transmitter, and the image forming apparatus receiving the image data comprising: a receiver that receives image data with a job ID, which is transmitted from another image forming apparatus; a job log information storage; and a job administrator that gives a job ID that is the same as or related to said job ID given to the image data received by said receiver, to job log information indicating a job executed on the image data, then stores the job log information in said job log information storage.
摘要:
An image processing device is disclosed, in which the data on a job, a password related to the job and the information specifying whether the input of the password is required to control the job are stored. In the image processing device, the information is stored to specify that the input of the password is not required to control a predetermined job in the case where a predetermined condition is met for the predetermined job.
摘要:
A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer.
摘要翻译:提供一种太阳能电池,其包括具有黄铜矿晶体结构的化合物半导体的光吸收层,并且具有优异的特性如转换效率。 太阳能电池包括第一电极层,第二电极层,介于第一电极层和第二电极层之间的p型半导体层,以及插入在p型半导体层和第二电极层之间的n型半导体层 电极层。 p型半导体层包括含有Ib族元素,IIIb族元素和VI族元素并具有黄铜矿结构的化合物半导体。 p型半导体层的带隙从n型半导体层侧单调增加到第一电极层侧。 n型半导体层侧的主面上的p型半导体层的带隙为1.08eV以上,第一电极层侧的主面上的p型半导体层的带隙为至少 1.17 eV 在p型半导体层中,在p型半导体层的厚度方向上的n型半导体层侧的第一区域和第一电极层侧的第二区域的带隙增加率彼此不同 。
摘要:
In a non-magnetic toner having non-magnetic toner particles containing at least a binder resin and a colorant, and an inorganic fine powder, the non-magnetic toner particles contain at least one ether compound having a specific structure, and the ether compound is in a content of from 5 ppm to 1,000 ppm.
摘要:
The present invention is aimed at providing a sliding contact material that has an alloy composition containing no harmful substance like Cd, especially excellent contact resistance properties, electrical functions that are good and is not subject to secular change, and abrasion resistance practically bearing comparison with conventional sliding contact materials, and is aimed at lengthening the life of a motor by the use of a sliding contact material having excellent durability as a commutator for a small direct-current motor. The present invention is a sliding contact material of an Ag—Ni-based alloy that is used in sliding part electrically switching on and off by mechanical sliding action, and the material is a sliding contact material of Ni metal particle-dispersed-type Ag—Ni-based alloy that is produced in such a method that 0.7 to 3.0 wt. % Ni powder, an additive of Li2CO3 powder corresponding to 0.01 to 0.50 wt. % Li after being converted to metal and the balance of Ag powder are mixed and stirred to form a uniformly dispersed mixture, then the mixture is treated with forming and sintering processes.
摘要:
The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy a relationship: Eg1>Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and an electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy a relationship: 0≦(&khgr;2−&khgr;1)