Writer with a hot seed zero throat and substantially flat top pole
    91.
    发明授权
    Writer with a hot seed zero throat and substantially flat top pole 有权
    作者有一个热种子零喉咙和基本平坦的顶极

    公开(公告)号:US06912106B1

    公开(公告)日:2005-06-28

    申请号:US10213532

    申请日:2002-08-06

    IPC分类号: G11B5/31 G11B5/147

    摘要: A method and system for providing a recording head is disclosed. The method and system include providing a first pole, a second pole, a write gap and at least one coil. The write cap separates the first pole from the second pole. The coil(s) include a plurality of turns and is between the first and second poles. The first pole includes a pedestal that has a first portion and a second portion. The first portion includes a high moment electroplated material. The second portion includes a hot seed layer that has a high moment sputtered material. The second portion of the first pole is adjacent to the write gap.

    摘要翻译: 公开了一种用于提供记录头的方法和系统。 该方法和系统包括提供第一极,第二极,写间隙和至少一个线圈。 写帽将第一极与第二极分开。 线圈包括多个匝并且在第一和第二极之间。 第一极包括具有第一部分和第二部分的基座。 第一部分包括高电流电镀材料。 第二部分包括具有高力矩溅射材料的热种子层。 第一极的第二部分与写入间隙相邻。

    Polarity reversal tolerant electrical circuit for ESD protection

    公开(公告)号:US06657836B2

    公开(公告)日:2003-12-02

    申请号:US10022990

    申请日:2001-12-18

    申请人: Qing He DC Sessions

    发明人: Qing He DC Sessions

    IPC分类号: H02H900

    摘要: An ESD protection circuit is provided which offers full protection for sub micron CMOS technology integrated circuits that does not have a latchup problem as in silicon controller rectifier circuits. The primary ESD protection transistor within the circuit channeling deleterious ESD currents away from the electrical circuit using snapback conduction while additionally enabling bipolar operation of the electrical circuit.

    Power supply reverse bias protection circuit for protecting both analog and digital devices coupled thereto

    公开(公告)号:US06650520B2

    公开(公告)日:2003-11-18

    申请号:US10014722

    申请日:2001-10-26

    申请人: Qing He

    发明人: Qing He

    IPC分类号: H02H342

    CPC分类号: H02H11/003 Y10T307/839

    摘要: All integrated circuits (ICs) require a power supply having a potential difference for use in powering internal integrated circuit components to ensure their operation. In some cases it is possible to inadvertently reverse the bias of the applied potential difference, resulting in damage to the IC. For propagating large currents big pass transistors are used within the circuit. Reverse bias protection for these ICs is achieved by utilizing either a protection transistor in parallel with the big pass transistor, or a diode within the big pass transistor for protecting both analog and digital ICs.