摘要:
A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.
摘要:
A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface. The system for coupling the measuring beam in and the system for coupling it out are configured such that the measuring beam is reflected at least once at the substrate surface and at least once at a reflecting surface of the imaging system that reflects the light employed for measurement purposes before the measuring beam enters the system for coupling it out, which allows employing the image side of the imaging system as part of the focus-detection system. The focus-detection system also operates reliably when used on ultrahigh-aperture lenses that have correspondingly short working distances.
摘要:
A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA≧0.85, if appropriate of NA≧1.
摘要:
An illumination system for a projection exposure machine, operating with ultraviolet light, for microlithography has an angle-conserving light mixing device with at least one integrator rod that has an entrance surface for receiving light from a light source, and an exit surface for outputting exit light mixed by the integrator rod. At least one prism arrangement for receiving exit light and for varying the state of polarization of the exit light is placed downstream of the integrator rod. A preferred prism arrangement has a polarization splitter surface, aligned transversely to the direction of propagation of the exit light, which passes light fractions with p-polarization without hindrance, and reflects fractions with s-polarization. The separated beams with orthogonal polarization are parallelized by means of a reflecting surface aligned parallel to the polarization splitter surface, and the same state of polarization is set for both partial beams by means of a suitable retarder.
摘要:
A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface. The system for coupling the measuring beam in and the system for coupling it out are configured such that the measuring beam is reflected at least once at the substrate surface and at least once at a reflecting surface of the imaging system that reflects the light employed for measurement purposes before the measuring beam enters the system for coupling it out, which allows employing the image side of the imaging system as part of the focus-detection system. The focus-detection system also operates reliably when used on ultrahigh-aperture lenses that have correspondingly short working distances.
摘要:
A REMA objective is realized by introduction of a few (1 to 5 units) aspherical surfaces of high-quality correction with a low number of lenses (no more than 10), and low path in glass (maximum 25% to 30%) of the object-reticle distance, thus enhancing efficiency.
摘要:
The invention relates to an evaluation method for interferograms and an interferometer corresponding thereto with which tile influence of coherent noise is reduced with simultaneously high interference contrast. Several phase maps are computed from interferograms which are recorded with coherent light. The interferogram components of the test object and the interferogram components of the coherent noise are displaced relative to each other in the camera plane between recording the interferograms. The influence of the coherent noise is suppressed by subsequently averaging the phase maps.
摘要:
An optical system, such as, for example, an illumination system or a projection lens of a microlithographic exposure system. The optical system can have an optical axis and include at least one optical element that includes an optically uniaxial material having, for an operating wavelength of the optical system, an ordinary refractive index no and an extraordinary refractive index ne. The extraordinary refractive index ne can be larger than the ordinary refractive index no. The optical element can absorb, at least for light rays of the operating wavelength entering the optical element with respect to the optical axis under an angle of incidence that lies within a certain angle region, a p-polarized component of the light rays significantly stronger than a s-polarized component of the light rays.
摘要:
There is provided an illumination system for microlithography. The illumination system includes an optical element having a plurality of field raster elements, a plane in which a field is illuminated, and a grazing incidence mirror situated in a light path from the optical element to the plane, after the optical element. The illumination system has no other grazing incidence mirror in the light path, after the optical element and before the plane.
摘要:
There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.