摘要:
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要:
Reducing or eliminating watermark-type defects during semiconductor device fabrication are described and can comprise treating photoresist using one of several embodiments. In some embodiments, the propensity for defect formation is reduced/eliminated by conditioning the photoresist surface through the application and removal of a sacrificial overcoat. In other embodiments, existing defects are reduced/eliminated by exposing the photoresist surface to a defect-stripping material during post-develop processing.
摘要:
In a solder printing inspection machine, an identification code and an inspection time of an inspection target board are accumulated in a memory. The accumulated data, whose identification code is matched with that of the current inspection target board, is searched while the accumulated data is traced back one by one. When the corresponding board is found, it is recognized that the board is extracted because of the defective board and the inspection target board is the reintroduced board that was previously extracted. A graph, in which pieces of information expressing the pieces of quality of the boards are arrayed in time series, is produced based on each time of inspection result and the graph is displayed on a monitor. In the pieces of data included in the graph, the data corresponding to the board that is recognized as the reintroduction is explicitly shown by a letter “R”.
摘要:
A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
摘要:
To provide a liquid crystal display, particularly TN type liquid crystal display capable of remarkably improving brightness inversion resistance at a high contrast with a simple configuration and an optical compensation film which realizes the aforementioned properties, the liquid crystal display includes a pair of polarizing plates, each of the polarizing plates being disposed on an outer side of a liquid crystal layer having a twisted structure, the liquid crystal layer being disposed between substrates facing to each other, at least one of the substrates having an electrode, each of the polarizing plates including a polarizing film, a protective film, and an optical compensation film, wherein the optical compensation film includes a compound having a discotic structure unit, and the compound having a discotic structure unit is aligned such that the average alignment direction of the molecular major axis of the discotic structure unit at each side of the upper and lower optical compensation films facing to the polarizing film cross each other at an angle of not greater than the crossing angle of absorption axes of the pair of polarizing plates.
摘要:
A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
摘要:
The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer. Light enters from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. The photo sensor portion includes sensors configured to convert the light into signals representing an image. Each of the sensors includes a relatively highly doped first conductivity type region adjacent the front surface side of the silicon layer and serving as a charge storage region, a first relatively lightly doped second conductivity type region extending from the charge storage region toward the rear surface side of the silicon layer and serving as a photo sensitive region, a second relatively highly doped second conductivity type region extending from the front surface side of the silicon layer toward the rear surface side of the silicon layer and serving as a floating diffusion region, and a relatively lightly doped region of the first conductivity type between the floating diffusion region and the charge storage region and under one of the at least one read out gate electrode and serving as a charge read out region.
摘要:
The present invention may provide a lens barrel which may include a guide shaft, and a movable lens frame. The barrel may be with an image capturing optical system disposed therein. The guide shaft may be disposed in the barrel and may extend parallel to the optical axis of the image capturing optical system. The movable lens frame may be reciprocally movable along the guide shaft in the barrel and holding lenses of the image capturing optical system. The barrel may include a wall supporting the guide shaft. The wall may include a light shield member projecting therefrom along the guide shaft in covering relation to a surface of the guide shaft which faces the optical axis.
摘要:
A signal transmission circuit is capable of reducing distortion that occurs during signal transmission. A digital output signal is transmitted from a terminal to a signal line via an output buffer circuit and an output impedance unit. The terminal is connected to an impedance variation unit via an impedance control unit. The impedance variation unit designates an impedance for terminating the signal line when the output data is changed from a high level H to a low level. A reflection occurring on the signal line can be prevented and a waveform distortion can be suppressed.
摘要:
A cleaning apparatus for a roller includes a platen roller and a cleaning roller brought into contact with the platen roller to clean a surface of the platen roller, where the cleaning roller is configured such that SP values (dissolution parameter) of the cleaning roller and of all additives added in the cleaning roller have differences of at least 2.0 from an SP value of the platen roller.