公开(公告)号：US10700098B2

公开(公告)日：2020-06-30

申请号：US16525846

申请日：2019-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Hiroyuki Miyake

IPC: H01L27/00 ,  G09G3/3233 ,  H01L27/12 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  G11C19/28

Abstract: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.

公开(公告)号：US10671204B2

公开(公告)日：2020-06-02

申请号：US15140825

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G06F3/041 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1343 ,  G09G3/36

Abstract: Provided is a novel touch panel that is highly convenience or reliable, a novel data processor that is highly convenient or reliable, a novel touch panel, a novel data processor, or a novel semiconductor device. The touch panel includes a sensor element and a display element. The sensor element includes a first conductive film and a second conductive film. The display element includes a layer containing a liquid crystal material and a third conductive film which is provided so that an electric field controlling the alignment of the liquid crystal material contained in the layer can be applied between the first conductive film and the third conductive film.

公开(公告)号：US10657882B2

公开(公告)日：2020-05-19

申请号：US16130447

申请日：2018-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/32 ,  G09G3/3208 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3233 ,  G09G3/20 ,  H01L27/32

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US20200150473A1

公开(公告)日：2020-05-14

申请号：US16732445

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki ,  Hiroyuki Miyake

IPC: G02F1/1368 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/36 ,  H01L27/12 ,  G02F1/1362 ,  H01L27/32

Abstract: An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.

公开(公告)号：US10585319B2

公开(公告)日：2020-03-10

申请号：US15995287

申请日：2018-06-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryo Hatsumi ,  Daisuke Kubota ,  Hiroyuki Miyake

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/1343

Abstract: A display device with less light leakage and excellent contrast is provided. A display device having a high aperture ratio and including a large-capacitance capacitor is provided. A display device in which wiring delay due to parasitic capacitance is reduced is provided. A display device includes a transistor over a substrate, a pixel electrode connected to the transistor, a signal line electrically connected to the transistor, a scan line electrically connected to the transistor and intersecting with the signal line, and a common electrode overlapping with the pixel electrode and the signal line with an insulating film provided therebetween. The common electrode includes stripe regions extending in a direction intersecting with the signal line.

公开(公告)号：US10527902B2

公开(公告)日：2020-01-07

申请号：US16100261

申请日：2018-08-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsushi Umezaki ,  Hiroyuki Miyake

IPC: G02F1/1368 ,  G09G3/3233 ,  H01L27/12 ,  G02F1/1362 ,  H01L27/32 ,  G09G3/3266 ,  G09G3/36 ,  G09G3/20 ,  G09G3/3275 ,  G09G3/34 ,  H01L29/423 ,  H01L27/15

Abstract: An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.

公开(公告)号：US10453873B2

公开(公告)日：2019-10-22

申请号：US15838476

申请日：2017-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.

公开(公告)号：US10283532B2

公开(公告)日：2019-05-07

申请号：US15904537

申请日：2018-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L51/00 ,  H01L29/778 ,  H01L27/32

Abstract: Provided is a novel semiconductor device. The semiconductor device comprises a first transistor and a second transistor. The first transistor comprises a first gate electrode; a first insulating film over the first gate electrode; a first oxide semiconductor film over the first insulating film; a first source electrode and a first drain electrode over the first oxide semiconductor film; a second insulating film over the first oxide semiconductor film, the first source electrode, and the first drain electrode; and a second gate electrode over the second insulating film. The second transistor comprises a first drain electrode; the second insulating film over the second drain electrode; a second oxide semiconductor film over the second insulating film; a second source electrode and a second drain electrode over the second oxide semiconductor film; a third insulating film over the second oxide semiconductor film, the second source electrode, and the second drain electrode; and a third gate electrode over the third insulating film. The first oxide semiconductor film partly overlaps with the second oxide semiconductor film.

公开(公告)号：US10256255B2

公开(公告)日：2019-04-09

申请号：US15239006

申请日：2016-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G11C19/00 ,  H01L27/12 ,  G11C19/28 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/36 ,  H01L29/786 ,  G09G3/3266 ,  G09G3/3275

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

公开(公告)号：US10199394B2

公开(公告)日：2019-02-05

申请号：US14519524

申请日：2014-10-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masahiro Katayama

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/786

Abstract: Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.