公开(公告)号：US06484470B1

公开(公告)日：2002-11-26

申请号：US09721642

申请日：2000-11-27

申请人： Isamu Matsui ,  Takashi Nakao ,  Isao Fukuda

发明人： Isamu Matsui ,  Takashi Nakao ,  Isao Fukuda

IPC分类号： E04B138

CPC分类号： B23Q1/015 ,  F16B5/0225

摘要： The present invention enables a member to be accurately fixed to a floor. With tapped holes 5 in a member mounting section 2 accurately aligned with marks formed in a grating 20 so as to correspond to through-holes 9, a bolt 14 is screwed in an internal thread cylinder 23 (fixed in a vent hole 21 in the grating 20) through a through-hole 13 in a presser plate 12 that can have its position changed relative to the member mounting plate 2, and the presser plate 12 is used to fix the member mounting plate 2 to the grating 20.

摘要翻译： 本发明能够将构件精确地固定在地板上。 具有与安装在安装部分2中的螺纹孔5准确地对齐于格栅20中形成的标记以对应于通孔9，螺栓14拧入内螺纹滚筒23（固定在光栅中的通气孔21中） 20）通过可以使其位置相对于构件安装板2改变的压板12中的通孔13，并且使用压板12将构件安装板2固定到光栅20。

公开(公告)号：US5553049A

公开(公告)日：1996-09-03

申请号：US330374

申请日：1994-10-27

申请人： Takashi Nakao

发明人： Takashi Nakao

IPC分类号： G03B31/02 ,  G11B7/00 ,  G11B7/003 ,  G11B7/005 ,  G11B3/76 ,  G03B31/06

CPC分类号： G03B31/02 ,  G11B7/0032 ,  G11B7/005

摘要： An apparatus for optically reproducing digital speech data recorded on a motion picture film is disclosed. The digital speech data recorded on an emulsifier surface of the motion picture film is illuminated with an illuminating light from the side of a base surface of the motion picture film, and the light transmitted through the emulsifier surface is collected as an incident light by a reproducing lens. With the present apparatus, it is possible to reduce the variations in the volume of the light of the reproduced digital signals otherwise caused by the scratch of dust present on the film base surface.

摘要翻译： 公开了一种用于光学再现记录在电影胶片上的数字语音数据的装置。 记录在电影胶片的乳化剂表面上的数字语音数据用来自电影胶片底面一侧的照明光照射，透过乳化剂表面的光通过再现被收集为入射光 镜片。 利用本装置，可以减少再现的数字信号的光量的变化，否则由于在基片表面上存在的灰尘的划痕引起。

公开(公告)号：US08784568B2

公开(公告)日：2014-07-22

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/04

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。

公开(公告)号：US20120186604A1

公开(公告)日：2012-07-26

申请号：US13233190

申请日：2011-09-15

申请人： Kensuke Takano ,  Shinji Miyazaki ,  Ken Ishii ,  Takashi Nakao

发明人： Kensuke Takano ,  Shinji Miyazaki ,  Ken Ishii ,  Takashi Nakao

IPC分类号： B08B5/00 ,  H01L21/3065

CPC分类号： C23C16/52 ,  C23C16/4405

摘要： According to one embodiment, a cleaning gas is sealed in a chamber of a semiconductor manufacturing apparatus, and the cleaning gas and deposits adhered in the chamber are reacted with each other to generate a reactive gas. After a predetermined time, the gas is exhausted from the chamber. Then, the chamber is evacuated while the cleaning gas is introduced into the chamber, and the reactive gas concentration contained in an exhausted gas is measured. The reactive gas concentration is compared with a determination value obtained when the deposits are removed from the chamber to determine whether the cleaning is terminated.

摘要翻译： 根据一个实施例，将清洁气体密封在半导体制造装置的室中，并且附着在室中的清洁气体和沉积物彼此反应以产生反应性气体。 在预定时间之后，气体从腔室排出。 然后，在将清洁气体引入室内的同时将室抽真空，并测量排出气体中所含的反应气体浓度。 将反应气体浓度与从室中移出沉积物时获得的确定值进行比较，以确定清洁是否终止。

公开(公告)号：US20120104340A1

公开(公告)日：2012-05-03

申请号：US13344680

申请日：2012-01-06

申请人： Yasuhito Yoshimizu ,  Fumiki Aiso ,  Atsushi Fukumoto ,  Takashi Nakao

发明人： Yasuhito Yoshimizu ,  Fumiki Aiso ,  Atsushi Fukumoto ,  Takashi Nakao

IPC分类号： H01L45/00

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L27/2409 ,  H01L27/2481 ,  H01L29/792 ,  H01L29/7926 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.

摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的​​多个 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

公开(公告)号：US08118985B2

公开(公告)日：2012-02-21

申请号：US12417074

申请日：2009-04-02

申请人： Seiji Ohya ,  Tomohiro Wakazono ,  Takashi Nakao ,  Hisashi Sasaki ,  Koji Shiotani

发明人： Seiji Ohya ,  Tomohiro Wakazono ,  Takashi Nakao ,  Hisashi Sasaki ,  Koji Shiotani

IPC分类号： G01N27/41

CPC分类号： G01N27/419 ,  G01N27/4067

摘要： A gas sensor (200) has a gas sensor element (10) including a first measurement chamber (16); a first pumping cell (11) having a first interior pump electrode (11c) and its counterpart electrode (11b); a second measurement chamber (18); a second pumping cell (13) that has a second interior pump electrode (13b); and a beater (50). The heater (50) has a lead section (50a); a first resistance portion (50bx) having a higher resistance than the lead portion (50a); and a main heating portion (50k) having a second resistance portion (50by) having a higher resistance than the first resistance portion (50bx) disposed at a leading end side in a longitudinal direction relative to a leading end of the first resistance portion (50bx). The second interior pump electrode (13b) is located within the first resistance portion (50bx) in the longitudinal direction.

摘要翻译： 气体传感器（200）具有包括第一测量室（16）的气体传感器元件（10）。 具有第一内部泵电极（11c）和其对应电极（11b）的第一泵送单元（11）; 第二测量室（18）; 具有第二内部泵电极（13b）的第二泵浦单元（13）; 和打浆机（50）。 加热器（50）具有引线部（50a）; 具有比引线部分（50a）更高的电阻的第一电阻部分（50bx）; 和具有比第一电阻部分（50bx）高的第二电阻部分（50by）的主加热部分（50by），该第二电阻部分设置在相对于第一电阻部分（50bx）的前端的纵向方向上的前端侧 ）。 第二内部泵电极（13b）在纵向方向上位于第一电阻部分（50bx）内。

公开(公告)号：US08115245B2

公开(公告)日：2012-02-14

申请号：US12554581

申请日：2009-09-04

申请人： Yasuhito Yoshimizu ,  Fumiki Aiso ,  Atsushi Fukumoto ,  Takashi Nakao

发明人： Yasuhito Yoshimizu ,  Fumiki Aiso ,  Atsushi Fukumoto ,  Takashi Nakao

IPC分类号： H01L29/788

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L27/2409 ,  H01L27/2481 ,  H01L29/792 ,  H01L29/7926 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.

摘要翻译： 非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构件，并且包括穿过所述多个电介质膜的多个电极膜和所述多个电极膜沿所述多个电极膜的堆叠方向 电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。 电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

公开(公告)号：US20110232686A1

公开(公告)日：2011-09-29

申请号：US13051804

申请日：2011-03-18

申请人： Kenichiro Toratani ,  Takashi Nakao

发明人： Kenichiro Toratani ,  Takashi Nakao

IPC分类号： B08B5/00 ,  C23F1/08

CPC分类号： C23C16/4412 ,  C23C16/4405

摘要： In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas.

摘要翻译： 在一个实施例中，一种清洁半导体制造装置的方法包括：通过处理室的供给管供给用于去除沉积在处理室的内壁上的沉积膜的清洁气体，使得来自 每单位时间的供给管大于每单位时间从处理室的排气管排出的净化气体的排出量。 该方法还包括供给惰性气体以向供应管填充惰性气体。

公开(公告)号：US20100112822A1

公开(公告)日：2010-05-06

申请号：US12564594

申请日：2009-09-22

申请人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

发明人： Kenichiro Toratani ,  Takashi Nakao ,  Ichiro Mizushima

IPC分类号： H01L21/465

CPC分类号： C23C16/0272 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/4405 ,  Y10S438/905

摘要： In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing boron is deposited on an inner wall of the reaction chamber, a silicon nitride film not containing boron is formed as the structure film on the substrate in the reaction chamber, and the inner wall of the reaction chamber is dry etched to be cleaned. At this time, the dry etching is terminated after boron is detected in a gas exhausted from the reaction chamber.

摘要翻译： 在通过在制造装置的反应室中的基板上形成结构膜的半导体装置的制造工序中，进行反应室内的清洗。 也就是说，在反应室的内壁上沉积由含硼的氮化硅膜制成的预涂膜，在反应室中的基板上形成不含硼的氮化硅膜作为结构膜，内壁 的反应室被干蚀刻以进行清洁。 此时，在从反应室排出的气体中检测到硼后，干法蚀刻终止。

公开(公告)号：US20100112791A1

公开(公告)日：2010-05-06

申请号：US12646563

申请日：2009-12-23

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。