公开(公告)号：US20050254179A1

公开(公告)日：2005-11-17

申请号：US11002814

申请日：2004-12-03

申请人： Daisuke Miyauchi ,  Tomohito Mizuno

发明人： Daisuke Miyauchi ,  Tomohito Mizuno

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  H01L43/08 ,  H01L43/10

CPC分类号： G11B5/3903

摘要： An MR element comprises: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed. The pinned layer incorporates a first pinned layer, a coupling layer and a second pinned layer. The second pinned layer incorporates first to third magnetic layers each of which is made of a magnetic material. Layered structures each made up of a Cu film, a magnetic film and a Cu film are inserted between the first magnetic layer and the second magnetic layer, and between the second magnetic layer and the third magnetic layer, respectively.

摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的钉扎层，其中钉扎层中的磁化方向是固定的。 固定层包括第一固定层，耦合层和第二固定层。 第二钉扎层包括第一至第三磁性层，每个磁性层由磁性材料制成。 各自由Cu膜，磁性膜和Cu膜构成的分层结构分别插入在第一磁性层和第二磁性层之间以及第二磁性层和第三磁性层之间。

公开(公告)号：US08666692B2

公开(公告)日：2014-03-04

申请号：US13044976

申请日：2011-03-10

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Hiroshi Kiyono

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Hiroshi Kiyono

IPC分类号： G06F17/18

CPC分类号： G11B5/64 ,  G11B2005/0021

摘要： In exemplary embodiments, first and second parameters are obtained for each of different temperatures of the magnetic recording layer. The absolute value of the first parameter for each magnetic grain has a minimum value when the temperature of each magnetic grain reaches a predetermined temperature that increases as the Curie temperature increases, and decreases as the Curie temperature decreases. The second parameter is related to the standard deviation of the coercivity distribution of the magnetic grains divided by the coercivity of the magnetic recording layer. The method calculates a value where the absolute measurement value of the first parameter has a minimum value and the temperature of the magnetic recording layer at which the standard deviation of the coercivity distribution of the magnetic grains divided by the coercivity of the magnetic recording layer has a maximum value.

摘要翻译： 在示例性实施例中，针对磁记录层的不同温度的每一个获得第一和第二参数。 当每个磁性颗粒的温度达到随着居里温度升高而增加的预定温度时，每个磁性颗粒的第一参数的绝对值具有最小值，并且随着居里温度降低而降低。 第二参数与磁性颗粒的矫顽力分布的标准偏差除以磁记录层的矫顽力相关。 该方法计算第一参数的绝对测量值具有最小值的值，并且磁记录层的矫顽力的矫顽力分布的标准偏差除以磁记录层的矫顽力的标准偏差为 最大值。

公开(公告)号：US08493818B2

公开(公告)日：2013-07-23

申请号：US13182562

申请日：2011-07-14

申请人： Satoshi Tomikawa ,  Tomohito Mizuno ,  Katsuki Kurihara

发明人： Satoshi Tomikawa ,  Tomohito Mizuno ,  Katsuki Kurihara

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head, includes: a pole that generates a writing magnetic field from an end surface that forms a portion of an air bearing surface opposing a magnetic recording medium; a waveguide through which light for exciting a surface plasmon propagates; a plasmon generator that couples to the light in a surface plasmon mode and generates near-field light from a near-field light generating portion on a near-field light generating end surface that forms the portion of the air bearing surface; and magnetic field focusing parts that are able to focus the writing magnetic field generated from the pole and that are disposed on both sides of the pole in a track width direction from a perspective of the air bearing surface side.

摘要翻译： 一种热辅助磁记录头，包括：极，其从形成与磁记录介质相对的空气轴承表面的一部分的端面产生书写磁场; 用于激发表面等离子体激元的光的波导传播; 等离子体发生器，其以表面等离子体模式耦合到所述光，并且在形成所述空气轴承表面的所述部分的近场光产生端面上产生来自近场光产生部分的近场光; 以及磁场聚焦部件，其能够将从极产生的写入磁场聚焦，并且从空气轴承表面侧的角度在轨道宽度方向上设置在磁极的两侧。

公开(公告)号：US20130016592A1

公开(公告)日：2013-01-17

申请号：US13182562

申请日：2011-07-14

申请人： Satoshi TOMIKAWA ,  Tomohito Mizuno ,  Katsuki Kurihara

发明人： Satoshi TOMIKAWA ,  Tomohito Mizuno ,  Katsuki Kurihara

IPC分类号： G11B13/04

CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

摘要： A thermally-assisted magnetic recording head, includes: a pole that generates a writing magnetic field from an end surface that forms a portion of an air bearing surface opposing a magnetic recording medium; a waveguide through which light for exciting a surface plasmon propagates; a plasmon generator that couples to the light in a surface plasmon mode and generates near-field light from a near-field light generating portion on a near-field light generating end surface that forms the portion of the air bearing surface; and magnetic field focusing parts that are able to focus the writing magnetic field generated from the pole and that are disposed on both sides of the pole in a track width direction from a perspective of the air bearing surface side.

摘要翻译： 一种热辅助磁记录头，包括：极，其从形成与磁记录介质相对的空气轴承表面的一部分的端面产生书写磁场; 用于激发表面等离子体激元的光的波导传播; 等离子体发生器，其以表面等离子体模式耦合到所述光，并且在形成所述空气轴承表面的所述部分的近场光产生端面上产生来自近场光产生部分的近场光; 以及磁场聚焦部件，其能够将从极产生的写入磁场聚焦，并且从空气轴承表面侧的角度在轨道宽度方向上设置在磁极的两侧。

公开(公告)号：US07957108B2

公开(公告)日：2011-06-07

申请号：US11889012

申请日：2007-08-08

申请人： Tsutomu Chou ,  Tomohito Mizuno

发明人： Tsutomu Chou ,  Tomohito Mizuno

IPC分类号： G11B5/39 ,  H04R31/00

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/3996 ,  Y10T29/49032

摘要： An MR element includes a free layer having a direction of magnetization that changes in response to an external magnetic field, a pinned layer having a fixed direction of magnetization, and a spacer layer disposed between these layers. The spacer layer includes a first region, a second region and a third region that are each in the form of a layer and that are arranged in a direction intersecting the plane of each of the foregoing layers. The second region is sandwiched between the first region and the third region. The first region and the third region are each composed of an oxide semiconductor, and the second region includes at least a nonmagnetic conductor phase.

摘要翻译： MR元件包括具有响应于外部磁场而变化的磁化方向的自由层，具有固定的磁化方向的被钉扎层以及设置在这些层之间的间隔层。 间隔层包括第一区域，第二区域和第三区域，其各自为层的形式，并且沿与每个前述层的平面交叉的方向布置。 第二区域夹在第一区域和第三区域之间。 第一区域和第三区域各自由氧化物半导体构成，第二区域至少包括非磁性导体相。

公开(公告)号：US20090231762A1

公开(公告)日：2009-09-17

申请号：US12047722

申请日：2008-03-13

申请人： Naoki Ohta ,  Satoshi Miura ,  Tomohito Mizuno

发明人： Naoki Ohta ,  Satoshi Miura ,  Tomohito Mizuno

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286

摘要： An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof.

摘要翻译： MR元件包括被钉扎层，自由层和非磁性空间层或夹在被钉扎层和自由层之间的隧道势垒层。 自由层的磁化方向基本上垂直于其膜表面，并且被钉扎层的磁化方向基本上平行于其膜表面。

公开(公告)号：US07580231B2

公开(公告)日：2009-08-25

申请号：US11588376

申请日：2006-10-27

申请人： Daisuke Miyauchi ,  Tomohito Mizuno

发明人： Daisuke Miyauchi ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903

摘要： A magneto-resistive element has a pinned layer, a free layer, and a spacer layer which is sandwiched between the pinned layer and the free layer. The spacer layer is made of copper. The magneto-resistive element is configured such that sense current is applied in a direction that is perpendicular to layer surfaces. The free layer has: a nonmagnetic layer that includes copper as a main component; and ternary alloy layers each including cobalt (Co), iron (Fe), and nickel (Ni), the ternary alloy layers being disposed on both sides of the nonmagnetic layer. The ternary alloy layer includes nickel and iron at a composition ratio in which a ratio x of an atomic percentage of nickel to a total atomic percentage of nickel and iron is 27%≦x≦45%.

摘要翻译： 磁阻元件具有被钉扎层，自由层和夹在被钉扎层和自由层之间的间隔层。 间隔层由铜制成。 磁阻元件被配置为使感应电流沿垂直于层表面的方向施加。 自由层具有：包含铜作为主要成分的非磁性层; 和包含钴（Co），铁（Fe）和镍（Ni）的三元合金层，三元合金层设置在非磁性层的两侧。 三元合金层包括镍和铁，其中镍的原子百分比与镍和铁的总原子百分比的比率x为27％<= x <= 45％的组成比。

公开(公告)号：US07564657B2

公开(公告)日：2009-07-21

申请号：US11076966

申请日：2005-03-11

申请人： Daisuke Miyauchi ,  Tomohito Mizuno

发明人： Daisuke Miyauchi ,  Tomohito Mizuno

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： Provided are a magnetoresistive device capable of obtaining a larger amount of resistance change and responding to a higher recording density and a thin film magnetic head comprising the magnetoresistive device. A first magnetization fixed film and a second magnetization fixed film have magnetization directions antiparallel to each other, and the second magnetization fixed film farther from a magnetization free layer is made of, for example, a material including at least one selected from the group consisting of tantalum (Ta), chromium (Cr) and vanadium (V), and has a bulk scattering coefficient of 0.25 or less. Thereby, a bulk scattering effect by the second magnetization fixed film which has a function of canceling out the amount of resistance change between the magnetization free layer and the first magnetization fixed film can be prevented, and a magnetoresistive ratio ΔR/R can be improved, and recorded magnetic information with a higher recording density can be read out.

摘要翻译： 提供了能够获得更大量的电阻变化并响应较高记录密度的磁阻器件和包括磁阻器件的薄膜磁头。 第一磁化固定膜和第二磁化固定膜具有彼此反平行的磁化方向，并且远离磁化自由层的第二磁化固定膜例如由包括选自以下的至少一种的材料制成： 钽（Ta），铬（Cr）和钒（V），体积散射系数为0.25以下。 因此，可以防止具有消除磁化自由层和第一磁化固定膜之间的电阻变化量的功能的第二磁化固定膜的体散射效应，并且可以提高磁阻比ΔR/ R， 并且可以读出具有较高记录密度的记录磁信息。

公开(公告)号：US07499247B2

公开(公告)日：2009-03-03

申请号：US11050014

申请日：2005-02-04

申请人： Daisuke Miyauchi ,  Tomohito Mizuno

发明人： Daisuke Miyauchi ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： G11B5/39

摘要： A magnetoresistive sensor comprises stacked layers. The stacked layers comprises a first magnetic layer, a second non-magnetic intermediate layer, and a second magnetic layer in which a direction of magnetization is variable depending on an external magnetic field. The first magnetic layer, the second non-magnetic intermediate layer, and the second magnetic layer are stacked in this order to form the stacked layers. The first magnetic layer has a first ferromagnetic layer in which a direction of magnetization is pinned relative to the external magnetic field, a first non-magnetic intermediate layer, and a second ferromagnetic layer in which a direction of magnetization is pinned in a direction opposite to the direction of magnetization of the first ferromagnetic layer. The first ferromagnetic layer, the first non-magnetic intermediate layer, and the second ferromagnetic layer are stacked in this order. A sense current flows through the stacked layers substantially in the direction of stacking. A ratio of a layer thickness of the second ferromagnetic layer to a layer thickness of the first ferromagnetic layer is in a range between 1.4 and 1.9. A ratio of a product of a saturation magnetization and the layer thickness of the second ferromagnetic layer to a product of a saturation magnetization and the layer thickness of the first ferromagnetic layer is in a range between 0.9 and 1.1.

摘要翻译： 磁阻传感器包括堆叠层。 堆叠层包括第一磁性层，第二非磁性中间层和第二磁性层，其中磁化方向取决于外部磁场而变化。 依次层叠第一磁性层，第二非磁性中间层和第二磁性层，形成堆叠层。 第一磁性层具有第一铁磁层，其中磁化方向相对于外部磁场固定，第一非磁性中间层和第二铁磁层，其中磁化方向被钉在与...相反的方向上 第一铁磁层的磁化方向。 第一铁磁层，第一非磁性中间层和第二铁磁层按此顺序堆叠。 感测电流基本上沿堆叠方向流过堆叠层。 第二铁磁层的层厚度与第一铁磁层的层厚度之比在1.4和1.9之间。 饱和磁化强度与第二铁磁层的层厚度的乘积与第一铁磁层的饱和磁化强度和层厚度的乘积之比在0.9与1.1之间。

公开(公告)号：US20060240289A1

公开(公告)日：2006-10-26

申请号：US11391278

申请日：2006-03-29

申请人： Tomohito Mizuno ,  Daisuke Miyauchi

发明人： Tomohito Mizuno ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1171

摘要： A free layer of an MR element incorporates a first layer, a second layer, a third layer, a fourth layer, a fifth layer and a sixth layer that are stacked in this order on a nonmagnetic conductive layer. The absolute value of magnetostriction constant of the free layer is 1×10−6 or smaller. The coercivity of the free layer is 20×79.6 A/m or smaller. The first layer is made of an alloy containing ‘a’ atomic percent cobalt and (100−a) atomic percent iron wherein ‘a’ falls within a range of 20 to 50 inclusive. The second layer is made of an alloy containing ‘b’ atomic percent cobalt and (100−b) atomic percent iron wherein ‘b’ falls within a range of 70 to 90 inclusive. In addition, oxidation treatment is given to a surface of the second layer farther from the first layer.

摘要翻译： MR元件的自由层包括在非磁性导电层上依次层叠的第一层，第二层，第三层，第四层，第五层和第六层。 自由层的磁致伸缩常数的绝对值为1×10 -6以下。 自由层的矫顽力为20×79.6A / m以下。 第一层由含有“a”原子百分比的钴和（100-a）原子百分比的铁的合金制成，其中'a'在20至50的范围内。 第二层由含有'b'原子％的钴和（100-b）原子百分比的铁的合金制成，其中'b'落在70-90的范围内。 此外，对第二层的离第一层更远的表面进行氧化处理。