摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要:
A positive resist composition including: (A-1) a resin of which a solubility in an alkali developer increases under the action of an acid, the resin including a repeating unit represented by formula (Ia) and a repeating unit represented by formula (A1); and (B) a compound capable of generating an acid upon irradiation with one of actinic ray and radiation: wherein in the formula (Ia), AR represents an aromatic group, and X1 represents a group having a carbon number of 5 or more and being capable of decomposing under the action of an acid, and in the formula (A1), m represents an integer of one of 1 and 2.
摘要:
The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.
摘要:
Disclosed is a positive working photoresist composition comprising an acid-decomposable polymer containing at least a repeating unit represented by the following formula (I) and at least either one repeating unit represented by the following formula (IIa) or (IIb), and also disclosed is a positive working photoresist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) an acid-decomposable polymer containing at least a repeating unit represented by the following formula (I) and at least either one repeating unit represented by the following formula (IIa) or (IIb), (C) at least one solvent capable of dissolving the components (A) and (B), (D) an organic basic compound and (E) at least one surfactant selected from fluorine-containing surfactants, silicon-containing surfactants and nonionic surfactants:
摘要:
A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d): (a) a polymer containing a dye structure having a molar extinction coefficient of 1.0×104 or more to light including a wavelength used for exposure of the photoresist; (b) a thermal crosslinking agent which is activated by an acid to react with component (a) described above, thereby forming a crosslinked structure; (c) a sulfonic acid ester compound or diaryl iodonium salt, which is decomposed to generate an acid with heating at temperature between 150 to 200° C.; and (d) an organic solvent capable of dissolving components (a) to (c) described above. The bottom anti-reflective coating material composition for a photoresist provides a bottom anti-reflective coating having a large absorbance to light including a wavelength used for exposure, and an adverse effect due to a standing wave generated by reflection from a substrate can be reduced, a limiting resolution of the photoresist is increased, and a good resist profile is obtained. A method of forming a resist pattern using the composition is also disclosed.
摘要:
A composition for anti-reflective coating material is disclosed, comprising a polymer compound having repeating units having specific structure, and optionally a melamine, guanamine, urea, phenol, naphthol or hydroxyanthracene compound substituted by at least one group selected from the group consisting of a methylol group and an alkoxymethyl group at two or more positions. The composition for anti-reflective coating material of the present invention is effective for the reduction of adverse effects of reflection by the substrate in a lithographic process using various radiations. A resist pattern formation process which comprises the use of the composition for anti-reflective coating material is also disclosed.
摘要:
A composition for a bottom anti-reflective coating material and a method for forming a resist pattern using the composition, which are high in the dry etching rate, high in the resolution, excellent in the resist film thickness dependency and high in the effect of preventing reflective light against exposure light, and provide no intermixing with the photoresist layer, are disclosed, wherein the composition for a bottom anti-reflective coating material comprises a naphthalene group-containing polymer compound having a specific structure.
摘要:
A novel siloxane polymer having at least 1 mol % of a structural unit derived from a cyclic heat addition product between a diene compound of formula (I) or (II) and an olefin or acetylene compound of formula (III), (IV) or (V): ##STR1## and a positive working light-sensitive composition comprising the siloxane polymer.