公开(公告)号：US07820498B2

公开(公告)日：2010-10-26

申请号：US12199737

申请日：2008-08-27

申请人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

发明人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

摘要翻译： 背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。 光电二极管通常形成在半导体衬底的前侧。 表面屏蔽层可以形成在光电二极管区域的前侧。 可以使用传感器前侧的硅化多晶硅形成光反射层。 光电二极管区域从半导体衬底的后表面接收光。 当一部分接收的光通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分反射向光电二极管区域。 硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

公开(公告)号：US09165969B2

公开(公告)日：2015-10-20

申请号：US12727115

申请日：2010-03-18

申请人： Duli Mao ,  Vincent Venezia ,  Howard Rhodes ,  Hsin Chih Tai ,  Yin Qian

发明人： Duli Mao ,  Vincent Venezia ,  Howard Rhodes ,  Hsin Chih Tai ,  Yin Qian

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14683

摘要： An apparatus of one aspect includes a photodetector array, and a peripheral region at a periphery of the photodetector array. A thinner interconnect line corresponding to the photodetector array is disposed within one or more insulating layers. A thicker interconnect line corresponding to the peripheral region is disposed within the one or more insulating layers. Other apparatus, methods, and systems are also disclosed.

摘要翻译： 一个方面的装置包括光电检测器阵列和在光电检测器阵列的外围的周边区域。 对应于光电检测器阵列的更薄的互连线设置在一个或多个绝缘层内。 对应于外围区域的较厚的互连线设置在一个或多个绝缘层内。 还公开了其他装置，方法和系统。

公开(公告)号：US20120019696A1

公开(公告)日：2012-01-26

申请号：US12842808

申请日：2010-07-23

申请人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

发明人： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14643

摘要： A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

摘要翻译： 公开了彩色图像传感器。 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列（“CFA”）。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道，并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元，其被耦合以组合第一颜色通道和第二颜色通道，以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一，第二和第三颜色通道的三个颜色通道的彩色图像。

公开(公告)号：US20110169991A1

公开(公告)日：2011-07-14

申请号：US12684731

申请日：2010-01-08

申请人： Keh-Chiang Ku ,  Chia-Ying Liu ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

发明人： Keh-Chiang Ku ,  Chia-Ying Liu ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC分类号： H04N5/335 ,  H04N3/14 ,  H01L21/00

CPC分类号： H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463

摘要： An image sensor pixel includes a substrate doped to have a first conductivity type. A first epitaxial layer is disposed over the substrate and doped to also have the first conductivity type. A transfer transistor gate is formed on the first epitaxial layer. An epitaxially grown photo-sensor region is disposed in the first epitaxial layer and has a second conductivity type. The epitaxially grown photo-sensor region includes an extension region that extends under a portion of the transfer transistor gate.

摘要翻译： 图像传感器像素包括掺杂以具有第一导电类型的衬底。 第一外延层设置在衬底上并掺杂也具有第一导电类型。 传输晶体管栅极形成在第一外延层上。 外延生长的光电传感器区域设置在第一外延层中并且具有第二导电类型。 外延生长的光电传感器区域包括在传输晶体管栅极的一部分下延伸的延伸区域。

公开(公告)号：US20090200587A1

公开(公告)日：2009-08-13

申请号：US12178552

申请日：2008-07-23

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Yin Qian

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Yin Qian

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/1464 ,  Y10S438/949

摘要： A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.

摘要翻译： 用于制造成像像素阵列的技术包括在阵列的前侧制造前侧部件。 在制造前侧部件之后，将掺杂剂层注入阵列的背面。 在掺杂剂层上形成掩模以选择性地暴露掺杂剂层的部分。 接下来，激光退火掺杂层的露出部分。 或者，掩模可以在形成掺杂剂层之前设置在背面上，并且通过暴露部分注入掺杂剂，随后激光退火。

公开(公告)号：US20130056808A1

公开(公告)日：2013-03-07

申请号：US13227099

申请日：2011-09-07

申请人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

发明人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/113

CPC分类号： H01L27/1463

摘要： An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.

摘要翻译： 描述了在集成电路上的半导体器件之间提供附加有效面积的隔离区域。 在一个实施例中，本发明包括具有在源极和漏极之间的源极，漏极和栅极的图像传感器的互补金属氧化物半导体晶体管，晶体管具有在源极和漏极之间耦合源极和漏极的沟道 栅极和围绕源极和漏极的周边的隔离屏障，以将源极和漏极与其它器件隔离，其中隔离屏障与通道的中心部分分开。

公开(公告)号：US08471316B2

公开(公告)日：2013-06-25

申请号：US13227099

申请日：2011-09-07

申请人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

发明人： Hsin-Chih Tai ,  Keh-Chiang Ku ,  Duli Mao ,  Vincent Venezia ,  Gang Chen

IPC分类号： H01L31/062

CPC分类号： H01L27/1463

摘要： An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.

摘要翻译： 描述了在集成电路上的半导体器件之间提供附加有效面积的隔离区域。 在一个实施例中，本发明包括具有在源极和漏极之间的源极，漏极和栅极的图像传感器的互补金属氧化物半导体晶体管，晶体管具有在源极和漏极之间耦合源极和漏极的沟道 栅极和围绕源极和漏极的周边的隔离屏障，以将源极和漏极与其它器件隔离，其中隔离屏障与通道的中心部分分开。

公开(公告)号：US20130056809A1

公开(公告)日：2013-03-07

申请号：US13227258

申请日：2011-09-07

申请人： Duli Mao ,  Hsin Chih Tai ,  Vincent Venezia ,  Howard Rhodes

发明人： Duli Mao ,  Hsin Chih Tai ,  Vincent Venezia ,  Howard Rhodes

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14614 ,  H01L27/1464 ,  H01L27/14689

摘要： An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide layer, the gate oxide layer having a first level of nitridation, and a second transistor having a gate oxide layer, the gate oxide layer having a second level of nitridation that is higher than the first level of nitridation.

摘要翻译： 描述了一种图像传感器，其中成像像素通过在选定的区域中阻挡氮化而具有降低的噪声。 在一个示例中，图像传感器的成像像素包括：光电二极管区域，用于响应于入射光积累图像电荷;第一晶体管，具有栅极氧化层;栅极氧化物层具有第一级氮化层;以及第二晶体管 具有栅极氧化层，所述栅极氧化物层具有高于所述第一级氮化的第二级氮化层。

公开(公告)号：US20090200452A1

公开(公告)日：2009-08-13

申请号：US12030055

申请日：2008-02-12

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Wei Dong Qian ,  Ashish Shah ,  Howard Rhodes

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Wei Dong Qian ,  Ashish Shah ,  Howard Rhodes

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14632 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14685

摘要： An image sensor includes an optical sensor region, a stack of dielectric and metal layers, and a buried focusing layer. The optical sensor is disposed within a semiconductor substrate. The stack of dielectric and metal layers are disposed on the semiconductor substrate above the optical sensor region. The metal layers include optical pass-throughs aligned to expose an optical path through the stack form a top dielectric layer through to the optical sensor region. The buried focusing layer is disposed over a conforming metal layer of the metal layers within the stack. The buried focusing layer includes a curved surface conformed by the optical pass-through of the conforming metal layer to focus light onto the optical sensor region.

摘要翻译： 图像传感器包括光学传感器区域，电介质和金属层的堆叠以及掩埋的聚焦层。 光学传感器设置在半导体衬底内。 电介质层和金属层堆叠在光学传感器区域上方的半导体衬底上。 金属层包括对准的光学通过，以暴露穿过堆叠的光路形成顶部电介质层通过光学传感器区域。 掩埋的聚焦层设置在堆叠内的金属层的适形金属层之上。 掩埋聚焦层包括由适形金属层的光学通过形成的弯曲表面，以将光聚焦到光学传感器区域上。

公开(公告)号：US08947572B2

公开(公告)日：2015-02-03

申请号：US13254421

申请日：2010-05-24

申请人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

发明人： Vincent Venezia ,  Duli Mao ,  Hsin-Chih Tai

IPC分类号： H04N3/14 ,  H01L27/146

CPC分类号： H01L27/14627 ,  H01L27/14629 ,  H01L27/1464

摘要： An apparatus for a dual-sided image sensor is described. The dual-sided image sensor captures frontside image data incident upon a frontside of the dual-sided image sensor within an array of photosensitive regions integrated into a semiconductor layer of the dual-sided image sensor. Backside image data incident upon a backside of the dual-sided image sensor is also captured within the same array of photosensitive regions.

摘要翻译： 描述了一种用于双面图像传感器的装置。 双面图像传感器捕获在整合到双面图像传感器的半导体层中的感光区域的阵列内入射到双面图像传感器的前侧的前侧图像数据。 入射到双面图像传感器背面的背面图像数据也被捕获在相同的光敏区域阵列内。