Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors
    1.
    发明申请
    Dopant Implantation Hardmask for Forming Doped Isolation Regions in Image Sensors 审中-公开
    用于在图像传感器中形成掺杂隔离区域的掺杂剂植入硬掩模

    公开(公告)号:US20120319242A1

    公开(公告)日:2012-12-20

    申请号:US13164563

    申请日:2011-06-20

    IPC分类号: H01L29/02 H01L31/02

    摘要: Forming a doped isolation region in a substrate during manufacture of an image sensor. A method of an aspect includes forming a hardmask layer over the substrate, and forming a photoresist layer over the hardmask layer. An opening is formed in the photoresist layer over an intended location of the doped isolation region. An opening is etched in the hardmask layer by exposing the hardmask layer to one or more etchants through the opening. The opening in the hardmask layer may have a width of less than 0.4 micrometers. The doped isolation region may be formed in the substrate beneath the opening in the hardmask layer by performing a dopant implantation that introduces dopant through the opening in the hardmask layer. The method of an aspect may include forming sidewall spacers on sidewalls of the opening in the hardmask layer and using the sidewall spacers as a dopant implantation mask.

    摘要翻译: 在图像传感器的制造期间在衬底中形成掺杂的隔离区域。 一种方面的方法包括在衬底上形成硬掩模层,以及在硬掩模层上形成光致抗蚀剂层。 在掺杂隔离区域的预定位置上的光致抗蚀剂层中形成开口。 通过将硬掩模层暴露于通过开口的一个或多个蚀刻剂,在硬掩模层中蚀刻开口。 硬掩模层中的开口可以具有小于0.4微米的宽度。 可以通过执行通过硬掩模层中的开口引入掺杂剂的掺杂剂注入,在硬掩模层中的开口下方的衬底中形成掺杂隔离区。 一方面的方法可以包括在硬掩模层中的开口的侧壁上形成侧壁间隔物,并且使用侧壁间隔物作为掺杂剂注入掩模。

    PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER
    4.
    发明申请
    PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER 审中-公开
    PIXEL带负电荷的浅层隔离(STI)衬垫

    公开(公告)号:US20140048897A1

    公开(公告)日:2014-02-20

    申请号:US13587811

    申请日:2012-08-16

    IPC分类号: H01L31/02 H01L31/18

    CPC分类号: H01L27/1463 H01L27/14689

    摘要: Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.

    摘要翻译: 包括具有形成在基板的表面中或附近的前表面和感光区域的基板的像素的实施例。 在与感光区域相邻的基板的前表面中形成隔离沟槽。 隔离沟槽包括具有底部和侧壁的沟槽,形成在底部和侧壁上的钝化层,以及用于填充未被钝化层填充的沟槽部分的填料。

    Image sensor with dual element color filter array and three channel color output
    6.
    发明授权
    Image sensor with dual element color filter array and three channel color output 有权
    图像传感器具有双元素滤色器阵列和三通道彩色输出

    公开(公告)号:US08345132B2

    公开(公告)日:2013-01-01

    申请号:US12842808

    申请日:2010-07-23

    摘要: A color image sensor is disclosed. The color image sensor includes a pixel array including a color filter array (“CFA”) overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first color filter elements contribute to a first color channel of the color image and the second color filter elements contribute to a second color channel of the color image. The color image sensor further includes a color combiner unit coupled to combine the first color channel with the second color channel to generate a third color channel of the color image based on the first and second color channels. An output port is coupled to the pixel array to output the color image having three color channels including the first, second, and third color channels.

    摘要翻译: 公开了彩色图像传感器。 彩色图像传感器包括像素阵列,其包括覆盖用于获取彩色图像的光电传感器阵列的滤色器阵列(CFA)。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一滤色器元件有助于彩色图像的第一颜色通道,并且第二滤色器元件有助于彩色图像的第二颜色通道。 彩色图像传感器还包括颜色组合器单元,其耦合以组合第一颜色通道和第二颜色通道,以基于第一和第二颜色通道生成彩色图像的第三颜色通道。 输出端口耦合到像素阵列以输出具有包括第一,第二和第三颜色通道的三个颜色通道的彩色图像。

    SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR
    7.
    发明申请
    SEAL RING SUPPORT FOR BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    背面照明图像传感器的密封圈支撑

    公开(公告)号:US20120175722A1

    公开(公告)日:2012-07-12

    申请号:US12986032

    申请日:2011-01-06

    IPC分类号: H01L27/146 H01L31/18

    摘要: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

    摘要翻译: 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧,其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内,以在结构上支撑密封环。

    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR
    8.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR WITH VERTICAL PIXEL SENSOR 有权
    背景照明成像传感器与垂直像素传感器

    公开(公告)号:US20120018620A1

    公开(公告)日:2012-01-26

    申请号:US13250237

    申请日:2011-09-30

    IPC分类号: H01L27/146 H01L31/0232

    摘要: A backside illuminated imaging sensor includes a vertical stacked sensor that reduces cross talk by using different silicon layers to form photodiodes at separate levels within a stack (or separate stacks) to detect different colors. Blue light-, green light-, and red light-detection silicon layers are formed, with the blue light detection layer positioned closest to the backside of the sensor and the red light detection layer positioned farthest from the backside of the sensor. An anti-reflective coating (ARC) layer can be inserted in between the red and green light detection layers to reduce the optical cross talk captured by the red light detection layer. Amorphous polysilicon can be used to form the red light detection layer to boost the efficiency of detecting red light.

    摘要翻译: 背面照明成像传感器包括垂直堆叠传感器,其通过使用不同的硅层在堆叠(或单独的堆叠)内的不同级别形成光电二极管来减少串扰,以检测不同的颜色。 形成蓝光,绿光和红光检测硅层,蓝光检测层位于最靠近传感器背面的位置,红光检测层位于离传感器背面最远的位置。 可以在红色和绿色光检测层之间插入抗反射涂层(ARC)层,以减少由红光检测层捕获的光学交叉对话。 可以使用非晶多晶硅来形成红光检测层,以提高检测红光的效率。