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155 条记录 (耗时 0.036 秒)

    Electronic device fabrication process
    93.
    发明授权
    Electronic device fabrication process 有权
    电子器件制造工艺

    公开(公告)号：US07651885B2

    公开(公告)日：2010-01-26

    申请号：US11303535

    申请日：2005-12-16

    申请人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu

    发明人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0007 ,  H01L51/002 ,  H01L51/0054 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein the organic semiconductor exhibits a high oxygen sensitivity in a comparison solution without the stabilizer but a lower oxygen sensitivity in the liquid composition; (b) liquid depositing the liquid composition; and (c) drying the liquid composition to form a layer of the electronic device, wherein the layer comprises the organic semiconductor.

    摘要翻译： 一种制造电子器件的方法，包括：（a）使用包含有机半导体和稳定剂的起始成分形成液体组合物，其中所述稳定剂包括强电子给体化合物或强电子受体化合物，其中所述有机半导体显示出高的 在没有稳定剂但在液体组合物中氧气敏感性较低的比较溶液中的氧敏感性; （b）液体组合物的液体沉积; 和（c）干燥所述液体组合物以形成所述电子器件的层，其中所述层包含所述有机半导体。

    TFT CONTAINING COALESCED NANOPARTICLES
    95.
    发明申请
    TFT CONTAINING COALESCED NANOPARTICLES 有权
    含TFT的含氮纳米颗粒

    公开(公告)号：US20080135937A1

    公开(公告)日：2008-06-12

    申请号：US11954736

    申请日：2007-12-12

    申请人： Yiliang Wu ,  Yuning Li ,  Beng S. Ong

    发明人： Yiliang Wu ,  Yuning Li ,  Beng S. Ong

    IPC分类号： H01L29/786

    CPC分类号： B22F7/04 ,  B22F1/0022 ,  B22F2999/00 ,  B82Y30/00 ,  H01L21/288 ,  H01L23/53242 ,  H01L51/0004 ,  H01L51/0021 ,  H01L51/0022 ,  H01L51/0036 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/102 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10S977/936 ,  Y10T428/25 ,  B22F1/0074 ,  B22F1/0085 ,  H01L2924/00

    摘要： A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer, and wherein at least one of the source electrode, the drain electrode, and the gate electrode comprise coalesced coinage metal containing nanoparticles and a residual amount of one or both of a stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles and a decomposed stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles.

    摘要翻译： 一种薄膜晶体管，包括：（a）绝缘层; （b）栅电极; （c）半导体层; （d）源电极; 和（e）漏电极，其中绝缘层，栅极电极，半导体层，源电极和漏电极是任何顺序的，只要栅电极和半导体层都接触绝缘层，以及 源电极和漏电极都接触半导体层，并且其中源电极，漏电极和栅电极中的至少一个包含聚结的含金属的含金属的纳米颗粒和剩余量的一种或两种稳定剂共价键合 包含聚合的含金属的纳米颗粒和分解的稳定剂共价结合到含聚合物的含金属的纳米颗粒上。

    Electronic device fabrication process
    99.
    发明申请
    Electronic device fabrication process 有权
    电子器件制造工艺

    公开(公告)号：US20070141747A1

    公开(公告)日：2007-06-21

    申请号：US11303535

    申请日：2005-12-16

    申请人： Yuning Li ,  Beng Ong ,  Yiliang Wu

    发明人： Yuning Li ,  Beng Ong ,  Yiliang Wu

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0007 ,  H01L51/002 ,  H01L51/0054 ,  H01L51/0541 ,  H01L51/0545

    摘要： A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein the organic semiconductor exhibits a high oxygen sensitivity in a comparison solution without the stabilizer but a lower oxygen sensitivity in the liquid composition; (b) liquid depositing the liquid composition; and (c) drying the liquid composition to form a layer of the electronic device, wherein the layer comprises the organic semiconductor.

    摘要翻译： 一种制造电子器件的方法，包括：（a）使用包含有机半导体和稳定剂的起始成分形成液体组合物，其中所述稳定剂包括强电子给体化合物或强电子受体化合物，其中所述有机半导体显示出高的 在没有稳定剂但在液体组合物中氧气敏感性较低的比较溶液中的氧敏感性; （b）液体组合物的液体沉积; 和（c）干燥所述液体组合物以形成所述电子器件的层，其中所述层包含所述有机半导体。

    DEVICES CONTAINING ANNEALED STABILIZED SILVER NANOPARTICLES
    100.
    发明申请
    DEVICES CONTAINING ANNEALED STABILIZED SILVER NANOPARTICLES 审中-公开
    含有退火稳定的银纳米粒子的装置

    公开(公告)号：US20070099357A1

    公开(公告)日：2007-05-03

    申请号：US11611228

    申请日：2006-12-15

    申请人： Yuning Li ,  Yiliang Wu ,  Beng Ong

    发明人： Yuning Li ,  Yiliang Wu ,  Beng Ong

    IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L27/12 ,  H01L27/01 ,  H01L31/0392

    CPC分类号： B22F1/0018 ,  B22F1/0062 ,  B22F9/24 ,  B22F2998/00 ,  B82Y30/00 ,  H01B1/22 ,  H01L51/0021 ,  H01L51/105 ,  Y10S977/777 ,  Y10S977/786 ,  Y10S977/787 ,  Y10S977/81 ,  Y10S977/896 ,  Y10S977/932

    摘要： An electronic device including in any suitable sequence: a substrate; an optional insulating layer or an optional semiconductor layer, or both the optional insulating layer and the optional semiconductor layer; and an electrically conductive element of the electronic device, wherein the electrically conductive element comprises annealed silver-containing nanoparticles, wherein the silver-containing nanoparticles are a product of a reaction of a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an optional solvent.

    摘要翻译： 一种电子设备，包括任何合适的顺序：基片; 可选的绝缘层或可选的半导体层，或者任选的绝缘层和可选的半导体层; 以及电子器件的导电元件，其中所述导电元件包括​​退火的含银纳米颗粒，其中所述含银纳米颗粒是银化合物与包含肼化合物的还原剂在存在下的反应的产物 包含银化合物，还原剂，稳定剂和任选溶剂的反应混合物中的热可除去稳定剂。