公开(公告)号：US20110253945A1

公开(公告)日：2011-10-20

申请号：US13142237

申请日：2009-12-18

Applicant: Kazuyuki Tohji ,  Yoshinori Sato ,  Shinji Hashiguchi ,  Kazutaka Hirano

Inventor： Kazuyuki Tohji ,  Yoshinori Sato ,  Shinji Hashiguchi ,  Kazutaka Hirano

IPC: H01B1/04 ,  F21V9/00 ,  B82Y99/00

CPC classification number: C01B31/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/05 ,  C01B32/152 ,  C01B32/168 ,  C01B32/174 ,  C01B32/18 ,  C01B32/20 ,  C01B32/25 ,  C01B2202/06 ,  C01P2004/04 ,  C01P2004/13 ,  C09C1/44 ,  C09C1/46 ,  C09C1/48 ,  C09C1/56 ,  C09C1/565 ,  D01F11/121

Abstract: The invention is directed to a carbon material dispersion, including: a fluorinated carbon material having a fluorinated surface formed by bringing a treatment gas with a fluorine concentration of 0.01 to 100 vol % into contact with a carbon material under conditions at 150 to 600° C.; and a dispersion medium in which the fluorinated carbon material is dispersed.

Abstract translation: 本发明涉及一种碳材料分散体，其包括：氟化碳材料，其具有通过使氟浓度为0.01〜100体积％的处理气体在150〜600℃的条件下与碳材料接触而形成的氟化表面 。 以及其中分散有氟化碳材料的分散介质。

公开(公告)号：US07994063B2

公开(公告)日：2011-08-09

申请号：US12988007

申请日：2009-04-10

Applicant: Tadahiro Ohmi ,  Akinobu Teramoto ,  Rui Hasebe ,  Masayuki Miyashita

Inventor： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rui Hasebe ,  Masayuki Miyashita

IPC: H01L21/30

CPC classification number: H01L21/02052 ,  H01L21/02054 ,  H01L21/0206 ,  Y10S438/906

Abstract: Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

Abstract translation: 公开了一种能够解决现有的清洗方法的问题的半导体基板的清洗方法，该清洗方法应至少包括五个步骤，用于清洗半导体基板等基板。 用于清洗半导体衬底的方法包括用含有臭氧的超纯水清洗衬底的第一步骤，用含有表面活性剂的超纯水清洗衬底的第二步骤以及从表面活性剂中除去有机化合物的第三步骤， 含有超纯水和2-丙醇的清洗液。 在第三步之后，将诸如氪的惰性气体的等离子体施加到基底上以进一步除去源自表面活性剂的有机化合物。

公开(公告)号：US20110086230A1

公开(公告)日：2011-04-14

申请号：US12992961

申请日：2009-06-18

Applicant: Jun Takano ,  Terunori Yamaguchi

Inventor： Jun Takano ,  Terunori Yamaguchi

IPC: B32B27/00 ,  C08F8/22

CPC classification number: C08J7/12 ,  C08J2327/12 ,  H01L31/049 ,  H01M14/005 ,  Y02E10/50 ,  Y10T428/3154

Abstract: A simple short-time method for modifying a fluorine resin film so that hydrophilicity is not likely to deteriorate over time. The method for modifying a fluorine resin film is characterized in that the surface of the fluorine resin film is provided with hydrophilicity by bringing the fluorine resin film into contact with a process gas, which contains gas containing fluorine atoms and at least one of gas containing oxygen atoms or inert gas.

Abstract translation: 用于改性氟树脂膜的简单的短时间方法，使得亲水性不可能随时间劣化。 氟树脂膜的改性方法的特征在于，通过使氟树脂膜与含有含有氟原子的气体和含氧气体中的至少一种的处理气体接触，使氟树脂膜的表面具有亲水性 原子或惰性气体。

公开(公告)号：US07875732B2

公开(公告)日：2011-01-25

申请号：US11795036

申请日：2006-01-12

Applicant: Tetsuo Nishida ,  Kazutaka Hirano ,  Megumi Tomisaki ,  Yasutaka Tashiro ,  Hitoshi Tsurumaru ,  Akihiro Nabeshima ,  Yoshinobu Abe ,  Hiroaki Tokuda ,  Akinori Oka

Inventor： Tetsuo Nishida ,  Kazutaka Hirano ,  Megumi Tomisaki ,  Yasutaka Tashiro ,  Hitoshi Tsurumaru ,  Akihiro Nabeshima ,  Yoshinobu Abe ,  Hiroaki Tokuda ,  Akinori Oka

IPC: C07D207/08

CPC classification number: H01G9/038 ,  C07D295/08 ,  H01G11/62 ,  H01M10/056 ,  H01M10/0568 ,  H01M10/0569 ,  Y02E60/13

Abstract: A quaternary ammonium salt of the formula (1) wherein R1 is straight-chain or branched alkyl having 1 to 4 carbon atoms, R2 is straight-chain or branched alkyl having 1 to 3 carbon atoms, and X− is CF3CO2−, CF3SO3BF3−, ClBF3−, AlF4—, CF3BF3−, C2F5BF3—, N(SO2F)2−, PF6−, AsF6— or SbF6−.

Abstract translation: 式（1）的季铵盐，其中R 1是具有1至4个碳原子的直链或支链烷基，R 2是具有1至3个碳原子的直链或支链烷基，X是CF 3 CO 2 - ，CF 3 SO 3 BF 3 - ，ClBF3-，AlF4-，CF3BF3-，C2F5BF3-，N（SO2F）2-，PF6-，AsF6-或SbF6-。

公开(公告)号：US07834197B2

公开(公告)日：2010-11-16

申请号：US10563125

申请日：2004-06-30

Applicant: Tetsuo Nishida ,  Yasutaka Tashiro ,  Megumi Tomisaki ,  Masashi Yamamoto ,  Kazutaka Hirano ,  Akihiro Nabeshima ,  Hiroaki Tokuda ,  Kenji Sato ,  Takashi Higono

Inventor： Tetsuo Nishida ,  Yasutaka Tashiro ,  Megumi Tomisaki ,  Masashi Yamamoto ,  Kazutaka Hirano ,  Akihiro Nabeshima ,  Hiroaki Tokuda ,  Kenji Sato ,  Takashi Higono

IPC: C07D207/08

CPC classification number: C07D207/08 ,  H01G9/038 ,  H01G11/60 ,  H01G11/62 ,  H01M6/164 ,  H01M6/166 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0025 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A quaternary ammonium salt of the formula (1), electrolytic solution and electrochemical device using the salt wherein R1 is straight-chain or branched alkyl having 1 to 4 carbon atoms, R2 is methyl or ethyl, and X− is a fluorine-containing anion.

Abstract translation: 式（1）的季铵盐，电解液和使用盐的电化学装置，其中R1是具有1-4个碳原子的直链或支链烷基，R2是甲基或乙基，X-是含氟阴离子 。

公开(公告)号：US07727415B2

公开(公告)日：2010-06-01

申请号：US11722120

申请日：2005-12-19

Applicant: Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Takanobu Kujime ,  Keiichi Nii ,  Rui Hasebe ,  Hitoshi Tsurumaru ,  Hideki Nakashima

Inventor： Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Takanobu Kujime ,  Keiichi Nii ,  Rui Hasebe ,  Hitoshi Tsurumaru ,  Hideki Nakashima

IPC: C09K13/00 ,  C09K13/04 ,  C09K13/02

CPC classification number: H01L21/32134 ,  C23F1/26 ,  H01L27/124

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract translation: 根据本发明的精细处理剂是用于精细处理包括钨膜和包含氟化氢，硝酸，氟化铵和氯化铵中的至少一种的氧化硅膜的多层膜的精细处理剂。 因此，可以提供通过控制蚀刻速率和使用其的精细处理方法对包括钨膜和氧化硅膜在内的多层膜进行精细处理的精细处理剂。

公开(公告)号：US20090169789A1

公开(公告)日：2009-07-02

申请号：US12318341

申请日：2008-12-24

Applicant: Tadahiro Ohmi ,  Akinobu Teramoto ,  Keita Fushimi ,  Jiro Yamanaka ,  Masayuki Miyashita ,  Tomoharu Nishioka

Inventor： Tadahiro Ohmi ,  Akinobu Teramoto ,  Keita Fushimi ,  Jiro Yamanaka ,  Masayuki Miyashita ,  Tomoharu Nishioka

IPC: B32B1/08

CPC classification number: B32B27/28 ,  B32B1/08 ,  B32B27/34 ,  Y10T428/1393

Abstract: A resin pipe has an inner layer made of a fluororesin, an intermediate layer of nylon, and an outermost layer made of a fluororesin and covering the intermediate layer.

Abstract translation: 树脂管具有由氟树脂制成的内层，尼龙的中间层和由氟树脂制成的最外层并覆盖中间层。

公开(公告)号：US20070178040A1

公开(公告)日：2007-08-02

申请号：US10592360

申请日：2005-03-11

Applicant: Hirohisa Kikuyama ,  Masahide Waki ,  Shinji Hashiguchi ,  Kenji Aoki

Inventor： Hirohisa Kikuyama ,  Masahide Waki ,  Shinji Hashiguchi ,  Kenji Aoki

IPC: C01G31/02

CPC classification number: C01G33/00 ,  C01G35/00 ,  C01P2004/03 ,  C01P2004/10

Abstract: A method for preparing tantalum oxide and/or niobium oxide, characterized in that it comprises adding a basic aqueous solution to an aqueous solution of tantalum fluoride salt and/or niobium fluoride salt, to form tantalum hydroxide and/or niobium hydroxide, and then firing said tantalum hydroxide and/or niobium hydroxide. The above method allows the preparation of the tantalum oxide and/or niobium oxide in the state of a needle crystal or columnar crystal, not of a spherical crystal or an assemblage form.

Abstract translation: 一种氧化钽和/或氧化铌的制备方法，其特征在于，包括向氟化钽盐和/或氟化铌盐水溶液中添加碱性水溶液，形成氢氧化钽和/或氢氧化铌，然后进行烧成 所述氢氧化钽和/或氢氧化铌。 上述方法允许以针状晶体或柱状晶体的状态制备氧化钽和/或氧化铌，而不是球形晶体或组合形式。