公开(公告)号：US20120250398A1

公开(公告)日：2012-10-04

申请号：US13238198

申请日：2011-09-21

Applicant: Hirofumi Morise ,  Hideaki Fukuzawa ,  Akira Kikitsu ,  Yoshiaki Fukuzumi

Inventor： Hirofumi Morise ,  Hideaki Fukuzawa ,  Akira Kikitsu ,  Yoshiaki Fukuzumi

IPC: G11C11/16 ,  G11C11/14

CPC classification number: G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

Abstract: A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire.

Abstract translation: 根据实施例的磁存储元件包括：沿第一方向延伸并具有由畴壁分隔的多个磁畴的磁性细线; 能够将沿第一方向流动的电流和从第一方向向相反方向流动的电流的电极施加到磁性细线; 以及辅助单元，其接收电输入并且辅助磁畴薄壁的全部或一部分中的畴壁的移动。

公开(公告)号：US08279667B2

公开(公告)日：2012-10-02

申请号：US12775133

申请日：2010-05-06

Applicant: Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

Inventor： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

IPC: G11C11/15

CPC classification number: G11C19/0841 ,  G11C8/14 ,  G11C11/14

Abstract: Provided are nonvolatile memory devices and program methods thereof, an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

Abstract translation: 提供了非易失性存储器件及其编程方法，集成电路存储器系统包括存储器阵列，该存储器阵列包括至少一个磁道，至少一个磁道中的每个磁道包括多个磁畴，以及至少一个耦合到其上的读/写单元 耦合到所述存储器阵列的解码电路，其可操作以选择所述磁畴中的至少一个;耦合到所述存储器阵列的读/写控制器，其可操作以从所述多个磁畴中的至少一个读取数据并写入 经由耦合到所述至少一个磁道中的每一个的所述至少一个读/写单元向所述多个磁畴中的至少一个提供数据，以及耦合到可操作以在所述磁畴之间移动数据的存储器阵列的域控制器 所述至少一个磁道中的每一个。

公开(公告)号：US08238150B2

公开(公告)日：2012-08-07

申请号：US12585363

申请日：2009-09-14

Applicant: Hiroyuki Ohmori

Inventor： Hiroyuki Ohmori

IPC: G11C11/14

CPC classification number: G11C19/0841 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage element includes a strip-shaped ferromagnetic material layer; a first electrode disposed at a first end of the ferromagnetic material layer; and a second electrode disposed at a second end of the ferromagnetic material layer, wherein a current-induced domain wall motion is caused by applying a current between the first electrode and the second electrode, in the ferromagnetic material layer, a magnetization state is written into a magnetization region as information or a magnetization state is read from a magnetization region as information, a magnetization direction in each magnetization region is parallel to a direction of the thickness of the ferromagnetic material layer, and at the time of writing information or reading information, a temperature distribution that monotonically decreases from the second end of the ferromagnetic material layer to the first end thereof is generated in the ferromagnetic material layer.

Abstract translation: 信息存储元件包括带状铁磁材料层; 设置在所述铁磁材料层的第一端的第一电极; 以及设置在所述铁磁材料层的第二端的第二电极，其中通过在所述铁磁材料层中在所述第一电极和所述第二电极之间施加电流而引起电流引起的畴壁运动，将磁化状态写入 作为信息或磁化状态的磁化区域作为信息从磁化区域读取，每个磁化区域中的磁化方向平行于铁磁材料层的厚度方向，并且在写入信息或读取信息时， 在铁磁材料层中产生从铁磁材料层的第二端到其第一端单调减小的温度分布。

公开(公告)号：US20110261602A1

公开(公告)日：2011-10-27

申请号：US12994241

申请日：2009-05-26

Applicant: Christoforos Moutafis ,  Stravros Komineas

Inventor： Christoforos Moutafis ,  Stravros Komineas

IPC: G11C19/08

CPC classification number: G11C19/0841 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/08 ,  G11C19/0866 ,  H01L43/08

Abstract: A method of storing one or more bits of information comprising: forming a magnetic bubble; and storing a said bit of information encoded in a typology of a domain wall of said magnetic bubble. Preferably a bit is encoded using a symmetric topological state of the domain wall and a topological state including at least one winding rotation of a magnetisation vector of the domain wall. Preferably the magnetic bubble is confined in an island of magnetic material, preferably of maximum dimension less than 1 μm.

Abstract translation: 一种存储一个或多个信息位的方法，包括：形成磁泡; 以及存储以所述磁性气泡的畴壁的类型学编码的所述信息位。 优选地，使用域壁的对称拓扑状态来编码位，并且包括域壁的磁化向量的至少一个绕组旋转的拓扑状态。 优选地，磁性气泡被限制在磁性材料岛中，优选最大尺寸小于1μm。

公开(公告)号：US20100284209A1

公开(公告)日：2010-11-11

申请号：US12775133

申请日：2010-05-06

Applicant: Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

Inventor： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

IPC: G11C19/00 ,  G11C7/00

CPC classification number: G11C19/0841 ,  G11C8/14 ,  G11C11/14

Abstract: Provided are nonvolatile memory devices and program methods thereof. an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

Abstract translation: 提供了非易失性存储器件及其编程方法。 集成电路存储器系统包括存储器阵列，其包括至少一个磁道，所述至少一个磁道中的每一个磁道包括多个磁畴和耦合到其上的至少一个读/写单元，耦合到存储器阵列的解码电路， 可操作以选择磁畴中的至少一个;耦合到存储器阵列的读/写控制器，其可操作以从多个磁畴中的至少一个读取数据，并将数据写入多个磁区中的至少一个 通过耦合到所述至少一个磁道中的每一个的所述至少一个读/写单元的域，以及耦合到存储器阵列的域控制器，所述存储器阵列可操作以在所述至少一个磁道中的每一个上的所述磁畴之间移动数据。

公开(公告)号：US07710756B2

公开(公告)日：2010-05-04

申请号：US11655927

申请日：2007-01-22

Applicant: Chee-kheng Lim ,  Yong-su Kim

Inventor： Chee-kheng Lim ,  Yong-su Kim

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  G11C11/14 ,  G11C19/0841 ,  Y10S977/933

Abstract: A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.

Abstract translation: 半导体器件包括具有多个磁畴的磁线，其中，所述磁线包括通过脉冲场或脉冲电流移动的磁畴壁。 半导体器件的磁线不需要额外的凹口，因为磁线包括磁畴壁，其移动距离由脉冲场或脉冲电流控制。

公开(公告)号：US20100097847A1

公开(公告)日：2010-04-22

申请号：US12585363

申请日：2009-09-14

Applicant: Hiroyuki Ohmori

Inventor： Hiroyuki Ohmori

IPC: G11C11/00 ,  G11C7/00 ,  G11C11/14

CPC classification number: G11C19/0841 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage element includes a strip-shaped ferromagnetic material layer; a first electrode disposed at a first end of the ferromagnetic material layer; and a second electrode disposed at a second end of the ferromagnetic material layer, wherein a current-induced domain wall motion is caused by applying a current between the first electrode and the second electrode, in the ferromagnetic material layer, a magnetization state is written into a magnetization region as information or a magnetization state is read from a magnetization region as information, a magnetization direction in each magnetization region is parallel to a direction of the thickness of the ferromagnetic material layer, and at the time of writing information or reading information, a temperature distribution that monotonically decreases from the second end of the ferromagnetic material layer to the first end thereof is generated in the ferromagnetic material layer.

Abstract translation: 信息存储元件包括带状铁磁材料层; 设置在所述铁磁材料层的第一端的第一电极; 以及设置在所述铁磁材料层的第二端的第二电极，其中通过在所述铁磁材料层中在所述第一电极和所述第二电极之间施加电流而引起电流引起的畴壁运动，将磁化状态写入 作为信息或磁化状态的磁化区域作为信息从磁化区域读取，每个磁化区域中的磁化方向平行于铁磁材料层的厚度方向，并且在写入信息或读取信息时， 在铁磁材料层中产生从铁磁材料层的第二端到其第一端单调减小的温度分布。

公开(公告)号：US20100061135A1

公开(公告)日：2010-03-11

申请号：US12536932

申请日：2009-08-06

Applicant: Keiichi Nagasaka ,  Hiroshi Ashida ,  Takao Ochiai ,  Ken Tamanoi

Inventor： Keiichi Nagasaka ,  Hiroshi Ashida ,  Takao Ochiai ,  Ken Tamanoi

IPC: G11C19/00 ,  G11C11/14

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic wire unit for storing information thereon includes a magnetic wire containing a material having an axis of easy magnetization, and extending in a first direction, the axis being switchable between the first direction and the second direction perpendicular to the first direction, the magnetic wire being capable of holding a plurality of magnetic domains representing information. The magnetic wire unit includes a current supply unit for applying an electric current to the magnetic wire so as to move magnetic domain walls defining the magnetic domains in the magnetic wire.

Abstract translation: 一种用于在其上存储信息的磁线单元，包括含有具有易磁化轴的材料并沿第一方向延伸的磁线，所述轴可在与第一方向垂直的第一方向和第二方向之间切换， 能够保持代表信息的多个磁畴。 磁线单元包括用于向磁线施加电流以便将限定磁畴中的磁畴的磁畴壁移动的电流供应单元。

公开(公告)号：US20090310241A1

公开(公告)日：2009-12-17

申请号：US12289299

申请日：2008-10-24

Applicant: Sung-Chul Lee

Inventor： Sung-Chul Lee

IPC: G11B5/02

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

Abstract translation: 提供了一种在磁性纳米线中使用磁畴壁移动来操作信息存储装置的方法。 磁性纳米线包括形成在磁畴之间的区域中的多个磁畴和钉扎位置。 该方法包括通过向磁性纳米线施加具有第一脉冲电流密度的第一脉冲电流并将磁畴壁移动到第二钉扎位置，通过施加具有第二脉冲的第二脉冲电流来从第一钉扎位置去除磁畴壁 磁性纳米线的电流密度。 第一脉冲电流密度大于第二脉冲电流密度。

公开(公告)号：US20090303631A1

公开(公告)日：2009-12-10

申请号：US12469047

申请日：2009-05-20

Applicant: Hyoung-seub RHIE

Inventor： Hyoung-seub RHIE

IPC: G11B19/02

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic racetrack memory device includes; a magnetic track having a plurality of magnetic domains partitioned by at least one magnetic domain wall, a current source applying current to the magnetic track sufficient to move the at least one magnetic domain wall and the plurality of magnetic domains along the magnetic track, a writing device disposed at a first location along the magnetic track and storing write data to the magnetic domains, a reading device disposed at a second location along the magnetic track and retrieving read data from the magnetic domains, and a write-back loop connecting the reading device and the writing device and communicating read data obtained by the reading device to the writing device.

Abstract translation: 磁力跑道存储装置包括： 具有由至少一个磁畴壁分隔的多个磁畴的磁道，电流源向磁道施加足以使所述至少一个磁畴壁和所述多个磁畴沿磁轨移动的写入 设置在沿着磁道的第一位置并将写入数据存储到磁畴的读取装置，设置在沿着磁道的第二位置并从磁畴检索读取数据的读取装置，以及将读取装置 和写入装置，并且将由读取装置获得的读取数据传送给写入装置。