公开(公告)号：US5514614A

公开(公告)日：1996-05-07

申请号：US421530

申请日：1995-04-13

申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L21/328

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882 ,  Y10S438/962 ,  Y10S438/979

摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供热电子晶体管。 在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应， 量子阱和隧道势垒。

公开(公告)号：US5486706A

公开(公告)日：1996-01-23

申请号：US249541

申请日：1994-05-26

申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L31/036

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882 ,  Y10S438/962 ,  Y10S438/979

摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供热电子晶体管。 在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应， 量子阱和隧道势垒。

公开(公告)号：US3167461A

公开(公告)日：1965-01-26

申请号：US7989760

申请日：1960-12-30

申请人： IBM

发明人： COMPTON DINSDALE M J

IPC分类号： H01L21/205

CPC分类号： H01L29/66151 ,  H01L21/2225 ,  H01L21/2251 ,  H01L29/885 ,  Y10S148/04 ,  Y10S148/049 ,  Y10S252/951 ,  Y10S438/925