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公开(公告)号：US5854357A
公开(公告)日：1998-12-29
申请号：US20411
申请日：1998-02-09
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups.
摘要翻译： 聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。
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102.发明授权Positive-working photoresist composition and multilayered resist material using the same 失效正性光致抗蚀剂组合物和使用其的多层抗蚀剂材料
公开(公告)号：US5817444A
公开(公告)日：1998-10-06
申请号：US927658
申请日：1997-09-11
IPC分类号： G03F7/004 , G03F7/039 , G03F7/11 , H01L21/027
CPC分类号： G03F7/0045
摘要： Proposed is a novel chemical-sensitization positive-working photoresist composition suitable for fine patterning of a resist layer in the manufacture of electronic devices. The composition is advantageous in various properties of photoresist composition without little dependency on the nature of the substrate surface, on which the photoresist layer is formed, with or without an antireflection undercoating layer. The most characteristic ingredient in the inventive composition is the film-forming resinous ingredient which is a combination of a first polyhydroxystyrene resin substituted by tetrahydropyranyl groups for the hydroxyl groups and a second hydroxystyrene resin substituted by alkoxyalkyl groups for the hydroxyl groups in a specified weight proportion of the first and second resins.
摘要翻译： 提出了一种新颖的化学增感正性光致抗蚀剂组合物，适用于电子器件制造中抗蚀剂层的精细图案化。 该组合物在光致抗蚀剂组合物的各种性质方面是有利的，而对于在其上形成有光致抗蚀剂层的基底表面的性质几乎没有依赖性，具有或不具有抗反射底涂层。 本发明组合物中最具特色的成分是成膜树脂成分，其是由用于羟基的四氢吡喃基取代的第一聚羟基苯乙烯树脂和用特定重量比例的羟基的烷氧基烷基取代的第二羟基苯乙烯树脂 的第一和第二树脂。
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公开(公告)号：US5795378A
公开(公告)日：1998-08-18
申请号：US935510
申请日：1997-09-23
IPC分类号： C08G77/06 , C08J3/09 , C09D183/04 , H01L21/316 , C09D183/06
CPC分类号： C08J3/095 , C08G77/06 , C09D183/04 , C08J2383/04
摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.
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公开(公告)号：US5756255A
公开(公告)日：1998-05-26
申请号：US747567
申请日：1996-11-12
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译： 提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。 本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c） （甲基）丙烯酸酯的不溶性树脂。
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105.发明授权公开(公告)号：US06225034B1
公开(公告)日：2001-05-01
申请号：US09173005
申请日：1998-10-15
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.
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公开(公告)号：US6077644A
公开(公告)日：2000-06-20
申请号：US207202
申请日：1998-12-08
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C69/013 , G03F7/004 , G03F7/039
CPC分类号： C07C69/013 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization positive-working photoresist composition used in the photolithographic patterning process for the manufacture of fine electronic devices, which is capable of giving, with high photosensitivity to ArF excimer laser beams, a patterned resist layer having an excellently orthogonal cross sectional profile and high resistance against dry etching and exhibiting good adhesion to the substrate surface. While the composition comprises (A) a film-forming resinous ingredient which undergoes an increase of alkali solubility by interacting with an acid and (B) a radiation-sensitive acid-generating agent, the most characteristic feature of the invention consists in the use of a specific acrylic resin as the component (A), which comprises the monomeric units of a (meth)acrylic acid ester of hydroxy bicyclo[3.1.1]heptanone unsubstituted or substituted by an alkyl group such as hydroxypinanone (meth)acrylate, optionally, in combination with the monomeric units derived from (meth)acrylic acid and/or tert-butyl (meth)acrylate in a molar fraction of 3:7 to 7:3.
摘要翻译： 提出了用于制造精细电子器件的光刻图案化工艺中的新型化学增感正性光致抗蚀剂组合物，其能够赋予ArF准分子激光束具有高光敏性的具有良好正交交叉的图案化抗蚀剂层 截面轮廓和高抗干蚀刻性，并且对基材表面具有良好的粘合性。 虽然组合物包含（A）通过与酸相互作用而增加碱溶解度的成膜树脂成分和（B）辐射敏感的酸产生剂，但是本发明的最特征在于使用 作为组分（A）的特定丙烯酸树脂，其包含未被取代或被烷基如羟基酮（甲基）丙烯酸酯取代的羟基双环[3.1.1]庚酮的（甲基）丙烯酸酯的单体单元， 与来自（甲基）丙烯酸和/或（甲基）丙烯酸叔丁酯的单体单元组合，摩尔分数为3:7至7:3。
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公开(公告)号：US6068000A
公开(公告)日：2000-05-30
申请号：US891137
申请日：1997-07-10
IPC分类号： G03F7/32 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3213 , B08B6/00 , H01L21/302
CPC分类号： H01L21/02071 , G03F7/42 , G03F7/423 , G03F7/425
摘要： The present invention provides a substrate treatment method to be performed after the steps of forming a desired resist pattern on a substrate and etching thereof, wherein said method comprises steps of: (I) removing the resist pattern on the substrate using a remover solution principally containing a salt derived from hydrofluoric acid and a metal-free base; (II) rinsing said substrate with a lithographic rinsing solution containing a water-soluble organic solvent and water; and (III) washing said substrate with water. According to the present invention, metallic films on the substrate are not corroded in the substrate treatment method, and the method can be performed at a low cost and with a reduced volume of labor for disposal of waste solution used for washing the substrate.
摘要翻译： 本发明提供了一种在基板上形成期望的抗蚀剂图案和蚀刻步骤之后执行的基板处理方法，其中所述方法包括以下步骤：（I）使用主要包含 衍生自氢氟酸和无金属碱的盐; （II）用含有水溶性有机溶剂和水的平版印刷冲洗溶液冲洗所述基材; 和（III）用水洗涤所述基材。 根据本发明，在基板处理方法中，基板上的金属膜不会被腐蚀，并且可以以低成本执行该方法，并且减少了用于清洗基板的废溶液处理的劳动量。
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公开(公告)号：US5948589A
公开(公告)日：1999-09-07
申请号：US658234
申请日：1996-06-04
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Proposed is an improved chemical sensitization-type positive-working photoresist composition of high sensitivity and high pattern resolution for the photolithographic patterning works in the manufacture of semiconductor devices, which exhibits excellent post-exposure stability of the latent image formed by the pattern-wise exposure of the resist layer to actinic rays not to be affected relative to the fidelity of pattern reproduction and sensitivity even by standing for a length of time after the exposure to actinic rays before the subsequent processing treatment. The composition is characterized by the formulation of, in addition to an acid generating compound to release an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution by the presence of an acid, an amine compound such as triethylamine and a carboxylic acid such as salicylic acid in combination.
摘要翻译： 提出了一种用于半导体器件制造中的光刻图案化工艺的高灵敏度和高图案分辨率的改进的化学增感型正性光致抗蚀剂组合物，其显示出通过图案曝光形成的潜像的优异的后曝光稳定性 的抗蚀剂层相对于图案再现和灵敏度的保真度而不受影响的光化射线，即使在随后的处理处理之后暴露于光化射线之后静置一段时间。 该组合物的特征在于除了通过光化射线照射释放酸的酸产生化合物和能够通过存在酸在碱性显影剂水溶液中赋予增加的溶解性的树脂成分之外， 胺化合物如三乙胺和羧酸如水杨酸组合。
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公开(公告)号：US5945248A
公开(公告)日：1999-08-31
申请号：US898124
申请日：1997-07-22
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/121
摘要： Proposed is a positive-working chemical-sensitization photoresist composition having advantages in respect of high resolution of patterning, high photosensitivity and orthogonal cross sectional profile of the patterned resist layer as well as in respect of little dependency of the performance on the nature of the substrate surface. The composition comprises:(A) 100 parts by weight of a film-forming hydroxyl-containing resin of a specified narrow molecular weight distribution substituted by acid-dissociable groups for a part of the hydroxyl groups which causes an increase of solubility in an aqueous alkaline solution by the interaction with an acid; and(B) from 0.5 to 20 parts by weight of a radiation-sensitive acid-generating agent which is a disulfone compound represented by the general formulaR.sup.1 --SO.sub.2 --(C.dbd.N.sub.2 ).sub.n --SO.sub.2 --R.sup.2,in which the subscript n is 0 or 1 and R.sup.1 and R.sup.2 are each, independently from the other, a monovalent cyclic group selected from the group consisting of pyridyl group, benzoxazolyl group and aryl groups substituted by at least one amino group or dialkylamino group, such as bis(4-pyridylsulfonyl) diazomethane, bis(benzoxazolyl-2-sulfonyl) diazomethane, bis(4-dimethylaminophenylsulfonyl) diazomethane and bis(5-dimethylamino-1-naphthyl) disulfone.
摘要翻译： 提出了一种正性化学增感光致抗蚀剂组合物，其在图案化抗蚀剂层的图案化高分辨率，高光敏性和正交截面轮廓方面具有优点，以及在性能对基材性质的几乎不依赖性方面具有优势 表面。 该组合物包含：（A）100重量份具有特定窄分子量分布的成膜羟基树脂，其部分羟基被酸解离基团取代，导致在碱性水溶液中的溶解度增加 溶液与酸的相互作用; 和（B）0.5〜20重量份作为通式R 1 -SO 2（C = N 2）n -SO 2 -R 2表示的二砜化合物的辐射敏感性发酸剂，其中下标n 是0或1，R 1和R 2各自独立地选自吡啶基，苯并恶唑基和被至少一个氨基或二烷基氨基取代的芳基的一价环状基团，例如双（4 （4-二甲基氨基苯磺酰基）重氮甲烷和双（5-二甲基氨基-1-萘基）二砜。
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110.发明授权Remover solution composition for resist and method for removing resist using the same 失效去除抗蚀剂的溶液组合物及使用其去除抗蚀剂的方法
公开(公告)号：US5905063A
公开(公告)日：1999-05-18
申请号：US89661
申请日：1998-06-03
IPC分类号： C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D17/08 , G03F7/42 , H01L21/027 , C11D7/08 , C11D7/22
摘要： A remover solution composition for resist which comprises (a) a salt of hydrofluoric acid with a metal-free base, (b) a water-soluble organic solvent, and (c) water and optionally (d) an anticorrosive, and has a pH or 5 to 8. A method for removing resist which comprises the steps of (I) forming a resist layer on a substrate having a metal film, (II) light-exposing the resist layer through a mask pattern and subsequently developing the resist layer to form a resist pattern, and (III) dry-etching the substrate using the resist pattern as a mask and then removing the unnecessary resist and modified resist film with the remover solution composition.
摘要翻译： 一种抗蚀剂去除剂溶液组合物，其包含（a）氢氟酸与无金属碱的盐，（b）水溶性有机溶剂和（c）水和任选的（d）防腐蚀剂，并具有pH 或5〜8。一种除去抗蚀剂的方法，其包括以下步骤：（I）在具有金属膜的基材上形成抗蚀剂层，（II）通过掩模图案曝光抗蚀剂层，随后将抗蚀剂层显影 形成抗蚀剂图案，（III）使用抗蚀剂图案作为掩模对基板进行干蚀刻，然后用去除剂溶液组合物除去不需要的抗蚀剂和改性的抗蚀剂膜。
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