公开(公告)号：US08742511B2

公开(公告)日：2014-06-03

申请号：US13944480

申请日：2013-07-17

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Leland Chang ,  Chung-Hsun Lin ,  Jeffrey W. Sleight

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78696

Abstract: A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material.

Abstract translation: 晶体管器件包括连接源极区和漏极区的沟道材料的多个平面层，其中平面层以通道材料层的叠层形成; 以及形成在沟道材料的平面层之间和之间的栅极导体。

公开(公告)号：US20130306935A1

公开(公告)日：2013-11-21

申请号：US13944480

申请日：2013-07-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Josephine B. Chang ,  Leland Chang ,  Chung-Hsun Lin ,  Jeffrey W. Sleight

IPC: H01L29/775

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/78696

Abstract: A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material.

Abstract translation: 晶体管器件包括连接源极区和漏极区的沟道材料的多个平面层，其中平面层以通道材料层的叠层形成; 以及形成在沟道材料的平面层之间和之间的栅极导体。