摘要:
A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.
摘要:
There is provided a photoelectric conversion apparatus which is characterized by comprising a plurality of photoelectric conversion regions of a first conductivity type, and a plurality of semiconductor regions of a second conductivity type opposite to the first conductivity type; and in that the plurality of photoelectric conversion regions of the first conductivity type and the plurality of semiconductor regions are alternately arranged, and a voltage controlling unit is further provided to change a width of a depletion layer formed in a semiconductor substrate by controlling a voltage to be applied to the semiconductor region of the second conductivity type provided between the plurality of photoelectric conversion regions of the first conductivity type.
摘要:
A driving method of a solid-state imaging apparatus including multiple reference level supplying units each arranged correspondingly to a predetermined number of signal holding units, to supply a reference level to an output node of the signal holding unit through the selecting unit, wherein the method includes steps of: performing a clamping operation for sampling and holding the signal in the signal holding unit, by terminating turn ON pulses to be supplied to the selecting units successively in separate timings, one for each one of the selecting units, or one for each group of the selecting units while the reference level is supplied from the reference level supplying unit to the output node; and performing an operation of selecting the signal holding units through the selecting units, by supplying the turn ON pulses successively to the selecting units, to read out the signals successively from the signal holding units selected.
摘要:
To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要:
There is provided a photoelectric conversion apparatus which is characterized by comprising a plurality of photoelectric conversion regions of a first conductivity type, and a plurality of semiconductor regions of a second conductivity type opposite to the first conductivity type; and in that the plurality of photoelectric conversion regions of the first conductivity type and the plurality of semiconductor regions are alternately arranged, and a voltage controlling unit is further provided to change a width of a depletion layer formed in a semiconductor substrate by controlling a voltage to be applied to the semiconductor region of the second conductivity type provided between the plurality of photoelectric conversion regions of the first conductivity type.
摘要:
A solid-state imaging apparatus has a plurality of pixels arranged linearly along columns of N, a plurality of clamping capacitors each arranged corresponding to each column of the pixels, for accumulating the charge amplified by an amplifying unit in the pixel, and a common node arranged corresponding to each set including the clamping capacitors of L (L is equal to or larger than 2, and a divisor of N), and connectable to each set including the clamping capacitors of L. A plurality of pixel selection switches are connected between the clamping capacitor and the common node, and a clamping unit clamps the common nodes to a reference potential. In addition, a sampling and holding circuit connects to the common nodes through the clamping unit, and samples and holds a charge corresponding to a charge of the common node.
摘要:
This invention provides an image pickup device comprising a plurality of pixels each including a photoelectric conversion unit, a semiconductor area to which a signal from the photoelectric conversion unit is transferred, a transfer switch for transferring the signal from the photoelectric conversion unit to the semiconductor area, and a read unit for reading out the signal from the semiconductor area, and a drive circuit for outputting a first level at which the transfer switch is set in an OFF state, a second level at which the transfer switch is set in an ON state, and a third level between the first level and the second level, wherein the drive circuit controls to hold the third level for a predetermined time while the transfer switch is changing from the ON state to the OFF state.
摘要:
An image sensing apparatus is provided, which is provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals such that the one-pixel signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of Image sensing elements.
摘要:
A solid-state imaging apparatus has a plurality of pixels arranged linearly along columns of N, a plurality of clamping capacitors each arranged corresponding to each column of the pixels, for accumulating the charge amplified by an amplifying unit in the pixel, a common node arranged corresponding to each set including the clamping capacitors of L (L is equal to or larger than 2, and a divisor of N), and connectable to each set including the clamping capacitors of L, a plurality of pixel selection switches each connected between the clamping capacitor and the common node, a clamping unit for clamping the common nodes to a reference potential, and a sampling and holding circuit connected to the common nodes through the clamping unit, and sampling and holding a charge corresponding to a charge of the common node.
摘要:
An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.