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    SOLID-STATE IMAGING DEVICE
    1.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号：US20110157440A1

    公开(公告)日：2011-06-30

    申请号：US13045775

    申请日：2011-03-11

    申请人： Tomoya Yoneda ,  Shigetoshi Sugawa ,  Toru Koizumi ,  Tetsunobu Kochi

    发明人： Tomoya Yoneda ,  Shigetoshi Sugawa ,  Toru Koizumi ,  Tetsunobu Kochi

    IPC分类号： H04N5/335

    CPC分类号： H04N1/195 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14643

    摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

    摘要翻译： 为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电 形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

    Solid-state imaging device
    3.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US07616355B2

    公开(公告)日：2009-11-10

    申请号：US11104538

    申请日：2005-04-13

    申请人： Tomoya Yoneda ,  Shigetoshi Sugawa ,  Toru Koizumi ,  Tetsunobu Kochi

    发明人： Tomoya Yoneda ,  Shigetoshi Sugawa ,  Toru Koizumi ,  Tetsunobu Kochi

    IPC分类号： H04N1/04

    CPC分类号： H04N1/195 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14643

    摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

    摘要翻译： 为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电 形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

    Image sensing device using MOS type image sensing elements
    6.
    发明授权
    Image sensing device using MOS type image sensing elements 失效
    图像感测器件采用MOS型摄像元件

    公开(公告)号：US06946637B2

    公开(公告)日：2005-09-20

    申请号：US10680181

    申请日：2003-10-08

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H01J40/14

    CPC分类号： H04N5/37452 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3741

    摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译： 在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压 场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件 通过V c1 <！ - SIPO

    Solid state image pickup device and manufacturing method therefor
    10.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号：US08395193B2

    公开(公告)日：2013-03-12

    申请号：US13364601

    申请日：2012-02-02

    申请人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Toru Koizumi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Tetsunobu Kochi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L27/14806 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/035281 ,  Y02E10/50

    摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.

    摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。 传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。 另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。 第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。