公开(公告)号：US5530279A

公开(公告)日：1996-06-25

申请号：US370457

申请日：1995-01-09

申请人： Shintaro Yamamichi ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L28/55 ,  Y10S148/014

摘要： A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.

摘要翻译： 薄膜电容器使用高介电常数的电介质膜。 下电极设置在触点上，层间绝缘膜与下电极接触，介电常数高的电介质膜覆盖下电极，上电极覆盖电介质膜。 下部电极的下端部的电介质膜的厚度薄，但是足够厚以使泄漏电流值低于其容许值。 在下电极正下方的位置处，层间绝缘膜具有厚度大于其它部分的厚度的部分。 层间绝缘膜在电介质膜的位于下电极侧的下端部的区域的正下方，电介质膜的厚度非常薄的情况下，形成层间绝缘膜的厚度 大于其余部分，或者电介质膜的下端部分较薄，但足够厚以使漏电流值低于容许值。 以这种方式，能够抑制下部电极的下端部的漏电流的发生。

公开(公告)号：US5332684A

公开(公告)日：1994-07-26

申请号：US905375

申请日：1992-06-29

申请人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/55 ,  H01L27/10805

摘要： A method for fabricating a thin-film capacitor for a semiconductor integrated circuit device includes steps of forming a barrier metal layer, forming a dielectric film, forming an interlayer insulating film, exposing the dielectric film and forming an upper electrode. The thin-film capacitor is fabricated by successively depositing the dielectric film and the upper electrode on a lower electrode. The dielectric film is made of a material having a high permittivity such as SrTiO.sub.3. The interlayer insulating film is left at side portions of the lower electrode and the dielectric film. In one aspect of the invention, even if the high permittivity film becomes thin at the side and end portions of the lower electrode, the interlayer insulating film can suppress an increase in a leakage current. In another aspect of the invention, the high permittivity film and lower electrode may be etched successively and collectively and an upper electrode is deposited thereon. It is possible to suppress an occurrence of short-circuiting of the electrodes and an increase in the leakage current at the side portions of the high permittivity film.

摘要翻译： 制造半导体集成电路器件的薄膜电容器的方法包括形成阻挡金属层，形成电介质膜，形成层间绝缘膜，暴露电介质膜并形成上电极的步骤。 薄膜电容器通过在下部电极上依次沉积介电膜和上部电极来制造。 电介质膜由具有高介电常数的材料如SrTiO 3制成。 层间绝缘膜留在下电极和电介质膜的侧部。 在本发明的一个方面中，即使高电容率膜在下电极的侧端部和端部变薄，也可以抑制漏电流的增加。 在本发明的另一方面，高电容率膜和下电极可以被连续地和一体地蚀刻并且上电极沉积在其上。 可以抑制电极短路的发生和高介电常数膜侧面的漏电流的增加。

公开(公告)号：US5262920A

公开(公告)日：1993-11-16

申请号：US882000

申请日：1992-05-13

申请人： Toshiyuki Sakuma ,  Shintaro Yamamichi ,  Shogo Matsubara

发明人： Toshiyuki Sakuma ,  Shintaro Yamamichi ,  Shogo Matsubara

IPC分类号： H01G4/008 ,  H01G4/06 ,  H01L21/02 ,  H01G4/10 ,  H01G1/01

CPC分类号： H01G4/008 ,  H01G4/06 ,  H01L28/75 ,  H01L28/55

摘要： In a thin film capacitor in which a lower electrode,a dielectric film and an upper electrode are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer made of Ti, Ta, Mo and W and a second conductive layer made of Pt, Pd, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film such as made of PdO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film.