公开(公告)号：US5539613A

公开(公告)日：1996-07-23

申请号：US73066

申请日：1993-06-08

申请人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L28/40

摘要： In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded by an insulator layer of Si.sub.3 N.sub.4.

摘要翻译： 在具有衬底的半导体器件中，至少一个薄膜电容器具有沉积在衬底上的下电极层，覆盖在下电极层上的电介质层和堆叠在电介质层上的上电极层，下电极层 被Si3N4的绝缘体层包围。

公开(公告)号：US5332684A

公开(公告)日：1994-07-26

申请号：US905375

申请日：1992-06-29

申请人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Toshiyuki Sakuma ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/55 ,  H01L27/10805

摘要： A method for fabricating a thin-film capacitor for a semiconductor integrated circuit device includes steps of forming a barrier metal layer, forming a dielectric film, forming an interlayer insulating film, exposing the dielectric film and forming an upper electrode. The thin-film capacitor is fabricated by successively depositing the dielectric film and the upper electrode on a lower electrode. The dielectric film is made of a material having a high permittivity such as SrTiO.sub.3. The interlayer insulating film is left at side portions of the lower electrode and the dielectric film. In one aspect of the invention, even if the high permittivity film becomes thin at the side and end portions of the lower electrode, the interlayer insulating film can suppress an increase in a leakage current. In another aspect of the invention, the high permittivity film and lower electrode may be etched successively and collectively and an upper electrode is deposited thereon. It is possible to suppress an occurrence of short-circuiting of the electrodes and an increase in the leakage current at the side portions of the high permittivity film.

摘要翻译： 制造半导体集成电路器件的薄膜电容器的方法包括形成阻挡金属层，形成电介质膜，形成层间绝缘膜，暴露电介质膜并形成上电极的步骤。 薄膜电容器通过在下部电极上依次沉积介电膜和上部电极来制造。 电介质膜由具有高介电常数的材料如SrTiO 3制成。 层间绝缘膜留在下电极和电介质膜的侧部。 在本发明的一个方面中，即使高电容率膜在下电极的侧端部和端部变薄，也可以抑制漏电流的增加。 在本发明的另一方面，高电容率膜和下电极可以被连续地和一体地蚀刻并且上电极沉积在其上。 可以抑制电极短路的发生和高介电常数膜侧面的漏电流的增加。

公开(公告)号：US06225133B1

公开(公告)日：2001-05-01

申请号：US08299407

申请日：1994-09-01

申请人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Hirohito Watanabe ,  Yoichi Miyasaka

IPC分类号： H01L2100

CPC分类号： H01L28/55 ,  H01L27/1085 ,  Y10T29/417 ,  Y10T29/43

摘要： After an interlayer insulating film is deposited on a silicon substrate, a contact hole or contact holes is or are formed at a desired position(s) and, then, after a polysilicon layer is deposited and the contact hole(s) is (are) embedded, the surface of the polysilicon layer is flattened by chemical and mechanical polishing using at least one of piperazine or colloidal silica slurry, and a barrier metal film 4 and a highly dielectric thin film 5 are deposited and processed to a desired size. Finally, an Al/TiN film 6 adapted for the upper electrode is formed. The leak current of the thin film capacitor which is obtained according to this method can be greatly reduced.

摘要翻译： 在硅衬底上沉积层间绝缘膜之后，在期望的位置形成或形成接触孔或接触孔，然后在沉积多晶硅层并且接触孔之后， 通过使用哌嗪或胶体二氧化硅浆料中的至少一种的化学和机械抛光使多晶硅层的表面平坦化，并且将阻挡金属膜4和高电介质薄膜5沉积并加工成所需的尺寸。 最后，形成适用于上电极的Al / TiN膜6。 根据该方法获得的薄膜电容器的漏电流可以大大降低。

公开(公告)号：US5670408A

公开(公告)日：1997-09-23

申请号：US510488

申请日：1995-08-02

申请人： Shintaro Yamamichi ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L28/55 ,  Y10S148/014

摘要： A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.

摘要翻译： 薄膜电容器使用高介电常数的电介质膜。 下电极设置在触点上，层间绝缘膜与下电极接触，介电常数高的电介质膜覆盖下电极，上电极覆盖电介质膜。 下部电极的下端部的电介质膜的厚度薄，但是足够厚以使泄漏电流值低于其容许值。 在下电极正下方的位置处，层间绝缘膜具有厚度大于其它部分的厚度的部分。 层间绝缘膜在电介质膜的位于下电极侧的下端部的区域的正下方，电介质膜的厚度非常薄的情况下，形成层间绝缘膜的厚度 大于其余部分，或者电介质膜的下端部分较薄，但足够厚以使漏电流值低于容许值。 以这种方式，能够抑制下部电极的下端部的漏电流的发生。

公开(公告)号：US5530279A

公开(公告)日：1996-06-25

申请号：US370457

申请日：1995-01-09

申请人： Shintaro Yamamichi ,  Yoichi Miyasaka

发明人： Shintaro Yamamichi ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242

CPC分类号： H01L27/10852 ,  H01L28/55 ,  Y10S148/014

摘要： A thin film capacitor uses a dielectric film of high dielectric constant. A lower electrode is disposed on a contact, an interlayer insulating film is in contact with the lower electrode, a dielectric film of high dielectric constant covers the lower electrode, and an upper electrode covers the dielectric film. Thicknesses of the dielectric film at lower end portions of the lower electrode are thin but thick enough to make a leakage current value lower than a tolerable value thereof. At locations immediately below the lower electrode, the interlayer insulating film has portions whose thicknesses are larger than thicknesses of other portions thereof. The interlayer insulating film is such that, immediately below the regions of the dielectric film which are located at lower end portions of sides of the lower electrode and at which thicknesses of the dielectric film are very thin, the thicknesses of the interlayer insulating film are made larger than the rest thereof, or the dielectric film is such that lower end portions thereof are thin but thick enough to make a leakage current value lower than a tolerable value thereof. In this way, the occurrence of leakage current at the lower end portions of the lower electrode is suppressed.

摘要翻译： 薄膜电容器使用高介电常数的电介质膜。 下电极设置在触点上，层间绝缘膜与下电极接触，介电常数高的电介质膜覆盖下电极，上电极覆盖电介质膜。 下部电极的下端部的电介质膜的厚度薄，但是足够厚以使泄漏电流值低于其容许值。 在下电极正下方的位置处，层间绝缘膜具有厚度大于其它部分的厚度的部分。 层间绝缘膜在电介质膜的位于下电极侧的下端部的区域的正下方，电介质膜的厚度非常薄的情况下，形成层间绝缘膜的厚度 大于其余部分，或者电介质膜的下端部分较薄，但足够厚以使漏电流值低于容许值。 以这种方式，能够抑制下部电极的下端部的漏电流的发生。

公开(公告)号：US5498561A

公开(公告)日：1996-03-12

申请号：US914023

申请日：1992-07-15

申请人： Toshiyuki Sakuma ,  Yoichi Miyasaka

发明人： Toshiyuki Sakuma ,  Yoichi Miyasaka

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/10844

摘要： According to a method of fabricating a memory cell for a semiconductor integrated circuit, a lower electrode having a predetermined shape is formed on a semiconductor layer. A first insulating interlayer is formed on an entire surface of the semiconductor layer such that only a top surface of the lower electrode is exposed. A dielectric having a high dielectric constant is formed on the lower electrode and on the semiconductor layer. An upper electrode is formed on the dielectric having a high dielectric constant. The upper electrode constitutes a capacitor with the lower electrode through the dielectric.

摘要翻译： 根据制造用于半导体集成电路的存储单元的方法，在半导体层上形成具有预定形状的下电极。 在半导体层的整个表面上形成第一绝缘中间层，使得只有下电极的顶表面露出。 在下电极和半导体层上形成具有高介电常数的电介质。 在具有高介电常数的电介质上形成上电极。 上电极构成电容器，下电极通过电介质。

公开(公告)号：US08389046B2

公开(公告)日：2013-03-05

申请号：US11865959

申请日：2007-10-02

申请人： Yoshihiko Ushiyama ,  Tsuyoshi Kitahara ,  Yoichi Miyasaka

发明人： Yoshihiko Ushiyama ,  Tsuyoshi Kitahara ,  Yoichi Miyasaka

IPC分类号： B05D5/06 ,  B05D5/12 ,  G06F3/038 ,  G09G5/00 ,  B41J29/38 ,  B41J2/17

CPC分类号： H01L51/0005 ,  G02B5/201 ,  H01L51/56

摘要： A liquid material arrangement method includes a first patter generating step, a dot deleting step and a liquid material arranging step. In the first pattern generating step, a first dot pattern is generated in which a first prescribed number of dots is set. In the dot deleting step, a second prescribed number of dots is deleted to generate a second dot pattern. In the liquid material arranging step, a liquid material is arranged in the prescribed region on the substrate by causing a nozzle and the substrate to scan in relative manner and discharging the liquid material based on the second dot pattern. In the dot deleting step, a dot indicator for each the first prescribed number of dots is determined based on discharge information of the nozzle, and the second prescribed number of dots is deleted based on the dot indicator.

摘要翻译： 液体材料排列方法包括第一图案生成步骤，点删除步骤和液体材料排列步骤。 在第一图案生成步骤中，生成第一点阵图案，其中设定第一规定数量的点。 在点删除步骤中，删除第二规定数量的点以产生第二点图形。 在液体材料配置步骤中，通过使喷嘴和基板相对地扫描并基于第二点图案排出液体材料，将液体材料布置在基板的规定区域中。 在点删除步骤中，基于喷嘴的排出信息确定每个第一规定数量的点的点指示符，并且基于点指示符删除第二规定数量的点。

公开(公告)号：US07592032B2

公开(公告)日：2009-09-22

申请号：US10789934

申请日：2004-02-27

申请人： Yoichi Miyasaka

发明人： Yoichi Miyasaka

IPC分类号： C23C16/52 ,  B05D5/00 ,  B41J29/393

CPC分类号： B41J2/04505 ,  B41J2/04561 ,  B41J2/04581 ,  B41J2/04588 ,  B41J2/04596 ,  B41J29/393

摘要： In a nozzle hole image recognition method for picturing a nozzle hole of a liquid droplet ejection head which is filled with a function liquid and then performing image recognition thereof, the nozzle hole is pictured synchronously with application, to the liquid droplet ejection head, of a driving waveform which causes single-period micromotion of a meniscus surface of the nozzle hole. Thus, it is possible to provide: the nozzle hole image recognition method in which the image of the nozzle hole is recognized at a good accuracy in a state in which the liquid droplet ejection head is filled with the function liquid and a position correction method of a liquid droplet ejection head using it; a nozzle hole inspection method; a nozzle hole image recognition apparatus; and a liquid droplet ejection apparatus equipped therewith.

摘要翻译： 在用于对填充有功能液体进行图像识别的液滴喷射头的喷嘴孔进行图形化的喷嘴孔图像识别方法中，喷嘴孔同时施加到液滴喷射头， 驱动波形，其导致喷嘴孔的弯月面的单周期微动作。 因此，可以提供：喷嘴孔图像识别方法，其中在液滴喷射头填充有功能液体的状态下以良好的精确度识别喷嘴孔的图像，以及位置校正方法 使用它的液滴喷射头; 喷嘴孔检查方法; 喷嘴孔图像识别装置; 和配备有液滴喷射装置的液滴喷射装置。

公开(公告)号：US20080291229A1

公开(公告)日：2008-11-27

申请号：US11835166

申请日：2007-08-07

申请人： Yoshihiko USHIYAMA ,  Tsuyoshi Kitahara ,  Yoichi Miyasaka

发明人： Yoshihiko USHIYAMA ,  Tsuyoshi Kitahara ,  Yoichi Miyasaka

IPC分类号： B41J29/38 ,  B41J2/005

CPC分类号： B41J2/2139 ,  B41J2202/09 ,  G02B5/201 ,  G02B5/223 ,  G02F1/133516

摘要： A liquid material arrangement method includes performing a first pattern generating step, a dot deleting step, and a liquid material arranging step. The first pattern generating step includes generating a first dot pattern in which a first prescribed number of dots is set according to the prescribed region. The dot deleting step includes deleting a second prescribed number of dots from the first prescribed number of dots to generate a second dot pattern. The liquid material arranging step includes arranging a liquid material in a prescribed region on a substrate by causing a nozzle and the substrate to scan in relative manner and discharging the liquid material from the nozzle based on the second dot pattern. The performing of the dot deleting step further includes deleting at least one prohibited dot with priority with the prohibited dot being determined based on discharge information of the nozzle determined in advance.

摘要翻译： 液体材料排列方法包括执行第一图案生成步骤，点删除步骤和液体材料排列步骤。 第一图案生成步骤包括根据规定区域生成其中设定了第一规定数量的点的第一点图案。 点删除步骤包括从第一规定数量的点删除第二规定数量的点以产生第二点图案。 液体材料布置步骤包括通过使喷嘴和基板相对地扫描并基于第二点图案从喷嘴排出液体材料，将基板上的规定区域中的液体材料布置。 点删除步骤的执行还包括基于预先确定的喷嘴的排放信息确定禁止点的优先级来删除至少一个禁止的点。

公开(公告)号：US06974754B2

公开(公告)日：2005-12-13

申请号：US10446829

申请日：2003-05-29

申请人： Yoichi Miyasaka

发明人： Yoichi Miyasaka

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/20

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： An embodiment of the present invention is a method of fabricating a semiconductor device. The method comprises forming a film of bottom electrode material entirely over the dielectric film; etching the bottom electrode film to partially define a sidewall of each of bottom electrodes; forming a film of ferroelectric material on the remainder of the bottom electrode film and the exposed surface of the dielectric film; forming a film of top electrode material on the ferroelectric film; and etching the top electrode film, the ferroelectric film and the remainder of the bottom electrode film until the surface of the dielectric film is exposed to completely define the sidewall of each of the bottom electrodes.

摘要翻译： 本发明的一个实施例是制造半导体器件的方法。 该方法包括在电介质膜上整个形成底部电极材料的膜; 蚀刻底部电极膜以部分限定每个底部电极的侧壁; 在底电极膜的剩余部分和电介质膜的暴露表面上形成铁电材料膜; 在铁电体膜上形成顶部电极材料的膜; 并且蚀刻顶部电极膜，铁电体膜和底部电极膜的其余部分，直到电介质膜的表面暴露以完全限定每个底部电极的侧壁。