Sound reproduction systems
    101.
    发明授权

    公开(公告)号:US09961468B2

    公开(公告)日:2018-05-01

    申请号:US12667342

    申请日:2008-07-04

    IPC分类号: H04S5/00 H04S3/00 H04R1/26

    摘要: A sound reproduction system includes an electro-acoustic transducer and a transducer driver for driving the electro-acoustic transducer. The transducer drive includes a filter which is configured to reproduce at a listener's location an approximation to the local sound field that would be present at the listener's ears in recording space, taking into account the characteristics and intended position of the electro-acoustic transducer relative to the listener's ears. The electro-acoustic transducer includes a first sound emitter which provides an intermediate sound emission channel, and second and third sound emitters providing respective left and right sound emission channels. The first sound emitter is located intermediate of second and third sound emitters. Higher frequencies from at least one of the second and third sound emitters are transmitted closer to the first sound emitter while lower frequencies are transmitted away from the first sound emitter.

    Sprinkler head
    102.
    发明授权
    Sprinkler head 有权
    喷头

    公开(公告)号:US08474545B2

    公开(公告)日:2013-07-02

    申请号:US13119481

    申请日:2008-09-30

    申请人: Takashi Takeuchi

    发明人: Takashi Takeuchi

    IPC分类号: A62C37/08

    CPC分类号: A62C37/12

    摘要: To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.

    摘要翻译: 提供一种洒水头,其特征在于,具备喷淋头主体,其内部具有喷嘴,与喷水管连接,安装在天花板上; 隐藏喷头主体的盖板; 保持器,其设置成使得盖板位于天花板表面下方并且能够在发生火灾时释放盖板; 以及安装在喷头主体上并且保持器可拆卸地连接到其上的圆柱形构件,并且具有能够在安装喷洒头时可以节省移除和重新附着保护盖的麻烦的结构。 喷洒头具有这样一种结构,使得安装在喷洒头上的保护盖安装在喷头主体的外周。

    Non-aqueous electrolyte secondary battery with high capacity and good life characteristics
    103.
    发明授权
    Non-aqueous electrolyte secondary battery with high capacity and good life characteristics 有权
    非水电解质二次电池具有容量大,寿命长的特点

    公开(公告)号:US08435675B2

    公开(公告)日:2013-05-07

    申请号:US11795801

    申请日:2006-03-23

    IPC分类号: H01M4/13

    摘要: Disclosed is a non-aqueous electrolyte secondary battery comprising a positive electrode containing a nickel-containing lithium composite oxide, a negative electrode containing graphite, and a non-aqueous electrolyte. The cut-off voltage of charge of this non-aqueous electrolyte secondary battery is 4.25 to 4.6 V. The negative electrode contains an additive that reacts with lithium at a potential higher than the potential of graphite. The ratio A/B of a positive electrode capacity A based on the weight of the nickel-containing lithium composite oxide and the cut-off voltage of charge relative to a weight B of the graphite contained in a portion of a negative electrode material mixture layer opposing to a positive electrode material mixture layer is 300 to 340 mAh/g, and the irreversible capacity C of the positive electrode and the irreversible capacity D of the negative electrode in the portion opposing to the positive electrode satisfies C≧D.

    摘要翻译: 公开了一种非水电解质二次电池,其包含含有镍的锂复合氧化物的正极,含有石墨的负极和非水电解质。 该非水电解质二次电池的电荷截止电压为4.25〜4.6V。负极含有与石墨的电位高的电位与锂反应的添加剂。 基于含镍锂复合氧化物的重量的正极容量A的比A / B和电荷相对于负极材料混合层的一部分中所含的石墨的重量B的截止电压 与正极合剂层相对的面积为300〜340mAh / g,正极的不可逆容量C和负极的与正极相反的部分的不可逆容量D满足C> = D。

    Positive Electrode active material for non-aqueous electrolyte-based secondary battery, production method therefor and non-aqueous electrolyte-based secondary battery using the same
    106.
    发明授权
    Positive Electrode active material for non-aqueous electrolyte-based secondary battery, production method therefor and non-aqueous electrolyte-based secondary battery using the same 有权
    非水电解质型二次电池用正极活性物质及其制造方法以及使用其的非水电解质二次电池

    公开(公告)号:US08187747B2

    公开(公告)日:2012-05-29

    申请号:US11727389

    申请日:2007-03-26

    IPC分类号: H01M4/00

    摘要: The present invention provides a positive electrode active material for a non-aqueous electrolyte-based secondary battery, composed of a lithium/nickel composite oxide with high capacity, low cost and excellent heat stability, an industrially suitable production method therefor, and a high safety non-aqueous electrolyte-based secondary battery. A lithium/nickel composite oxide is produced by the following steps (a) to (c): (a) Nickel hydroxide or nickel oxyhydroxide having a specified component is prepared at a temperature of 600 to 1100° C., under air atmosphere. (b) Fired powders are prepared after mixing said nickel oxide and a lithium compound, and then by firing at a maximal temperature range of 650 to 850° C., under oxygen atmosphere. (c) Obtained fired powders are washed with water within a time satisfying the following equation (2) and then filtered and dried. A≦B/40   (2) wherein, A represents washing time represented by unit of minute; and B represents slurry concentration represented by unit of g/L).

    摘要翻译: 本发明提供一种非水电解质型二次电池用正极活性物质,由具有高容量,低成本,优异的热稳定性的锂/镍复合氧化物构成,其工业上合适的制造方法,高安全性 非水电解质二次电池。 通过以下步骤(a)至(c)制备锂/镍复合氧化物:(a)在空气气氛下,在600〜1100℃的温度下制备具有规定成分的氢氧化镍或氢氧化正镍。 (b)在氧化镍和锂化合物混合之后,然后在氧气氛下在最高温度范围650〜850℃下进行烧成,制备烧成粉末。 (c)获得的发泡粉末在满足下述式(2)的时间内用水洗涤,然后过滤并干燥。 A≦̸ B / 40(2)其中,A表示以分钟为单位表示的洗涤时间; B表示以g / L为单位表示的浆料浓度)。

    SPRINKLER HEAD
    107.
    发明申请
    SPRINKLER HEAD 有权
    喷头

    公开(公告)号:US20110247836A1

    公开(公告)日:2011-10-13

    申请号:US13119481

    申请日:2008-09-30

    申请人: Takashi Takeuchi

    发明人: Takashi Takeuchi

    IPC分类号: A62C37/08

    CPC分类号: A62C37/12

    摘要: To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.

    摘要翻译: 提供一种洒水头,其特征在于,具备喷淋头主体,其内部具有喷嘴,与喷水管连接,安装在天花板上; 隐藏喷头主体的盖板; 保持器,其设置成使得盖板位于天花板表面下方并且能够在发生火灾时释放盖板; 以及安装在喷头主体上并且保持器可拆卸地连接到其上的圆柱形构件,并且具有能够在安装喷洒头时可以节省移除和重新附着保护盖的麻烦的结构。 喷洒头具有这样一种结构,使得安装在喷洒头上的保护盖安装在喷头主体的外周。

    Epitaxial wafer for semiconductor light emitting diode and semiconductor light emitting diode using same
    108.
    发明授权
    Epitaxial wafer for semiconductor light emitting diode and semiconductor light emitting diode using same 有权
    用于半导体发光二极管的外延晶片和使用其的半导体发光二极管

    公开(公告)号:US07884387B2

    公开(公告)日:2011-02-08

    申请号:US12134271

    申请日:2008-06-06

    IPC分类号: H01L33/00

    摘要: An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.

    摘要翻译: 根据本发明的用于半导体发光器件的外延晶片,其中至少形成有由AlGaInP材料,有源层,p型Mg掺杂包覆层和 p型接触层依次层叠在n型GaAs衬底上,p型接触层形成为Mg掺杂接触层和Zn掺杂接触层堆叠的至少两层 从n型GaAs衬底观察时,其包括插入在p型Mg掺杂包覆层和p型接触层之间的Zn掺杂层。

    Packet communicating apparatus
    109.
    发明授权
    Packet communicating apparatus 失效
    分组通信装置

    公开(公告)号:US07843909B2

    公开(公告)日:2010-11-30

    申请号:US12216965

    申请日:2008-07-14

    IPC分类号: H04L12/50

    摘要: Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.

    摘要翻译: 实现了PON内ONU下的用户带宽控制。 BAS设置在用户授权期间在OLT中获得的用户带宽信息。 OLT使用从BAS设置的带宽信息,在用户的基础上实现带宽控制。 本发明使得能够对ONU之下的用户进行带宽控制。

    Light-emitting device epitaxial wafer and light-emitting device
    110.
    发明申请
    Light-emitting device epitaxial wafer and light-emitting device 有权
    发光元件外延片和发光元件

    公开(公告)号:US20100224855A1

    公开(公告)日:2010-09-09

    申请号:US12656674

    申请日:2010-02-12

    IPC分类号: H01L33/00

    CPC分类号: H01L33/325 H01L33/025

    摘要: A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.

    摘要翻译: 发光器件外延晶片包括n型衬底,堆叠在n型衬底上的n型覆层,包括堆叠在n型覆层上的量子阱结构的发光层和p型 型覆盖层堆叠在发光层上。 n型包覆层包括掺杂有2种以上的包含Si的n型掺杂剂的混合物的外延层,并且厚度不小于250nm且不大于750nm。 或者,发光装置外延晶片包括n型衬底,堆叠在n型衬底上的n型覆层,堆叠在n型覆层上的发光层和p型覆层 层叠在发光层上。 n型包覆层包含2种以上含有Si的n型杂质。