摘要:
A sound reproduction system includes an electro-acoustic transducer and a transducer driver for driving the electro-acoustic transducer. The transducer drive includes a filter which is configured to reproduce at a listener's location an approximation to the local sound field that would be present at the listener's ears in recording space, taking into account the characteristics and intended position of the electro-acoustic transducer relative to the listener's ears. The electro-acoustic transducer includes a first sound emitter which provides an intermediate sound emission channel, and second and third sound emitters providing respective left and right sound emission channels. The first sound emitter is located intermediate of second and third sound emitters. Higher frequencies from at least one of the second and third sound emitters are transmitted closer to the first sound emitter while lower frequencies are transmitted away from the first sound emitter.
摘要:
To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.
摘要:
Disclosed is a non-aqueous electrolyte secondary battery comprising a positive electrode containing a nickel-containing lithium composite oxide, a negative electrode containing graphite, and a non-aqueous electrolyte. The cut-off voltage of charge of this non-aqueous electrolyte secondary battery is 4.25 to 4.6 V. The negative electrode contains an additive that reacts with lithium at a potential higher than the potential of graphite. The ratio A/B of a positive electrode capacity A based on the weight of the nickel-containing lithium composite oxide and the cut-off voltage of charge relative to a weight B of the graphite contained in a portion of a negative electrode material mixture layer opposing to a positive electrode material mixture layer is 300 to 340 mAh/g, and the irreversible capacity C of the positive electrode and the irreversible capacity D of the negative electrode in the portion opposing to the positive electrode satisfies C≧D.
摘要:
A protein comprising (I) an anti-CD14 antibody or its active fragment, or a derivative thereof and (II) an inhibitor for a protease, or its active fragment, or a derivative thereof is provided.
摘要:
A negative electrode active substance material for a lithium ion secondary battery contains a lithium titanium complex oxide having a composition expressed as Li4Ti5-xMnxO12 (where 0
摘要翻译:用于锂离子二次电池的负极活性物质材料包含具有表示为Li 4 Ti 5-x Mn x O 12的组成的锂钛复合氧化物(其中0
摘要:
The present invention provides a positive electrode active material for a non-aqueous electrolyte-based secondary battery, composed of a lithium/nickel composite oxide with high capacity, low cost and excellent heat stability, an industrially suitable production method therefor, and a high safety non-aqueous electrolyte-based secondary battery. A lithium/nickel composite oxide is produced by the following steps (a) to (c): (a) Nickel hydroxide or nickel oxyhydroxide having a specified component is prepared at a temperature of 600 to 1100° C., under air atmosphere. (b) Fired powders are prepared after mixing said nickel oxide and a lithium compound, and then by firing at a maximal temperature range of 650 to 850° C., under oxygen atmosphere. (c) Obtained fired powders are washed with water within a time satisfying the following equation (2) and then filtered and dried. A≦B/40 (2) wherein, A represents washing time represented by unit of minute; and B represents slurry concentration represented by unit of g/L).
摘要:
To provide a sprinkler head including: a sprinkler head main body having a nozzle therein, connected to water supply piping, and installed in a ceiling; a cover plate concealing the sprinkler head main body; a retainer disposed so that the cover plate is located below the ceiling surface and capable of releasing the cover plate in the event of fire; and a cylindrical member that is attached to the sprinkler head main body and to which the retainer is detachably connected, and having a structure that can save the trouble of removing and reattaching a protective cap at the time of installation of the sprinkler head. The sprinkler head has such a structure that a protective cap attached to the sprinkler head is fitted to the outer periphery of the sprinkler head main body.
摘要:
An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material, an active layer, a p-type Mg-doped cladding layer, and a p-type contact layer are stacked successively in that order on an n-type GaAs substrate, and the p-type contact layer is formed as at least two layers that are an Mg-doped contact layer and a Zn-doped contact layer stacked thereon when viewed from the n-type GaAs substrate, comprises a Zn-doped layer which is inserted between the p-type Mg-doped cladding layer and the p-type contact layer.
摘要:
Bandwidth control over users accommodated under ONU in PON is achieved. BAS sets user bandwidth information obtained during user authorization in OLT. The OLT achieves bandwidth control on a user basis, using bandwidth information set from the BAS. The present invention enables bandwidth control over users under the ONUs.
摘要:
A light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer including a quantum well structure stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes an epitaxial layer doped with a mixture of 2 or more n-type dopants including Si, and is not less than 250 nm and not more than 750 nm in thickness. Alternatively, a light-emitting device epitaxial wafer includes an n-type substrate, an n-type cladding layer stacked on the n-type substrate, a light-emitting layer stacked on the n-type cladding layer, and a p-type cladding layer stacked on the light-emitting layer. The n-type cladding layer includes 2 or more n-type impurities including Si.