公开(公告)号：US20080291579A1

公开(公告)日：2008-11-27

申请号：US11753836

申请日：2007-05-25

申请人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

发明人： Takumi Uesugi ,  Takeo Kagami ,  Tetsuro Sasaki ,  Kei Hirata ,  Masaru Hirose ,  Chi Man Lee ,  Kwok Piu Tso

IPC分类号： G11B5/33

CPC分类号： G11B5/455 ,  G11B5/3189 ,  G11B5/3903

摘要： A noise-testing method for a thin-film magnetic head with an MR read head element and a heating unit capable of applying a heat and a stress to the MR read head element, includes a step of applying alternately and discontinuously with each other an electrical power having a first level and an electrical power having a second level higher than the first level to the heating unit, and a step of evaluating the thin-film magnetic head by measuring a noise output or noise outputs obtained from the MR read head element when the electrical power or the electrical powers are applied to the heating unit.

摘要翻译： 具有MR读取头元件的薄膜磁头和能够向MR读取头元件施加热和应力的加热单元的噪声测试方法包括以下步骤：交替地和不连续地施加电气 具有第一电平的功率和具有比加热单元的第一电平高的第二电平的电力;以及通过测量从MR读取头元件获得的噪声输出或噪声输出来评估薄膜磁头的步骤， 电力或电力被施加到加热单元。

公开(公告)号：US20080174920A1

公开(公告)日：2008-07-24

申请号：US11626562

申请日：2007-01-24

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/56 ,  G11B5/127

CPC分类号： G11B5/4826 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.

摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层， 其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有 。 因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性 的电影特色。

公开(公告)号：US20080170339A1

公开(公告)日：2008-07-17

申请号：US11622697

申请日：2007-01-12

申请人： Naoki Ohta ,  Kei Hirata

发明人： Naoki Ohta ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/3136 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3173 ,  G11B5/6047 ,  G11B5/6082 ,  G11B2005/3996

摘要： A magnetic head slider includes at least one thin-film magnetic head formed on a trailing surface of the magnetic head slider, and an ABS to be faced a magnetic disk in operation. At least a part of the ABS is made of a giant magnetostrictive material.

摘要翻译： 磁头滑动器包括形成在磁头滑块的后表面上的至少一个薄膜磁头和操作中面向磁盘的ABS。 ABS的至少一部分由巨磁致伸缩材料制成。

公开(公告)号：US20080170336A1

公开(公告)日：2008-07-17

申请号：US11968911

申请日：2008-01-03

申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.

摘要翻译： 本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，并且第一铁磁层和第二铁磁层彼此层叠，间隔层插入 在它们之间具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层之间的半导体氧化物层 和第二非磁性金属层，形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，并且添加金属不太可能被氧化成锌。 因此，可以根据需要保持器件的面积电阻率低，并且使得形成间隔层的一部分的半导体氧化物层变厚，同时阻止任何噪声增加。 这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点，并且膜特性的可靠性得到更大的改善。

公开(公告)号：US20080112096A1

公开(公告)日：2008-05-15

申请号：US11934979

申请日：2007-11-05

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3254 ,  H01L43/10

摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohomic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value.If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation than ever before, and extend the service life of the device as well. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.

摘要翻译： 形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围 和第二非磁性金属层。 这允许间隔层的比电阻大于欧姆导电面积的电阻，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。 如果器件可以具有合适的面积电阻率和高的MR比，那么在低电流操作中可以获得比以往更稳定的输出功率，并且延长器件的使用寿命。 该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

公开(公告)号：US20070291422A1

公开(公告)日：2007-12-20

申请号：US11708537

申请日：2007-02-21

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/48

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/12 ,  Y10T428/1121

摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

摘要翻译： 一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层 这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。 间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由 其合金。

公开(公告)号：US20070242391A1

公开(公告)日：2007-10-18

申请号：US11623493

申请日：2007-01-16

申请人： Atsushi YAMAGUCHI ,  Kei Hirata ,  Satoshi Miura ,  Yoshihiro Tsuchiya ,  Kiyoshi Noguchi

发明人： Atsushi YAMAGUCHI ,  Kei Hirata ,  Satoshi Miura ,  Yoshihiro Tsuchiya ,  Kiyoshi Noguchi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3967 ,  G11B5/11 ,  G11B5/3912

摘要： A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.

摘要翻译： 磁阻元件包括下磁屏蔽膜和设置在下磁屏蔽膜上方的磁阻膜。 下磁屏蔽膜包括下屏蔽层和上屏蔽层。 上屏蔽层是无定形或微晶的，由含有B或P的NiFe或CoFe组合物制成并沉积在下屏蔽层上。 下屏蔽层是晶体尺寸等于或小于20nm的非晶或微晶的导电层。

公开(公告)号：US20070217087A1

公开(公告)日：2007-09-20

申请号：US11723143

申请日：2007-03-16

申请人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10

摘要： A magnetic thin film has a layer which is formed of an alloy having a ordered crystal structure whose composition formula is represented by XYZ or X2YZ (where X is one or more than one of the elements selected from the group consisting of Co, Ir, Rh, Pt, and Cu, Y is one or more than one of the elements selected from the group consisting of V, Cr, Mn, and Fe, and Z is one or more than one of the elements selected the group consisting of Al, Si, Ge, As, Sb, Bi, In, Ti, and Pb). The alloy contains at least one additive element which is not included in the composition formula of the alloy and which has a Debye temperature that is equal to or less than 300K.

摘要翻译： 磁性薄膜具有由具有有序晶体结构的合金形成的层，其组成式由XYZ或X 2 YZ表示（其中X是选自以下的元素中的一种或多于一种元素： 由Co，Ir，Rh，Pt和Cu组成的组，Y是选自V，Cr，Mn和Fe中的一种或多种元素，Z是一种或多于一种 元素选自Al，Si，Ge，As，Sb，Bi，In，Ti和Pb组成的组）。 该合金含有至少一种添加元素，其不包括在合金的组成式中，并且德拜温度等于或小于300K。

公开(公告)号：US10586558B1

公开(公告)日：2020-03-10

申请号：US16267803

申请日：2019-02-05

申请人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Hironori Araki ,  Atsushi Yamaguchi ,  Kei Hirata

发明人： Yoshitaka Sasaki ,  Hiroyuki Ito ,  Kazuki Sato ,  Shigeki Tanemura ,  Hironori Araki ,  Atsushi Yamaguchi ,  Kei Hirata

IPC分类号： G11B5/31 ,  G11B5/11 ,  G11B5/127 ,  G11B5/02

摘要： A magnetic head includes a main pole and a write shield. The write shield includes a bottom shield, a first side shield and a second side shield. The first side shield has first and second sidewalls. The second side shield has third and fourth sidewalls. Each of the second and fourth sidewalls has a top edge farthest from a top surface of a substrate. The top edge of each of the second and fourth sidewalls is parallel to a medium facing surface. A portion of a top surface of the bottom shield, the first sidewall, and the third sidewall define a receiving section to receive a portion of the main pole. The receiving section has a bottom including a first inclined portion, a second inclined portion, and a third inclined portion.

公开(公告)号：US08964514B2

公开(公告)日：2015-02-24

申请号：US13568542

申请日：2012-08-07

申请人： Kei Hirata ,  Ryo Hosoi ,  Keita Kawamori ,  Tetsuya Roppongi

发明人： Kei Hirata ,  Ryo Hosoi ,  Keita Kawamori ,  Tetsuya Roppongi

IPC分类号： G11B11/24 ,  G11B13/08 ,  G11B5/31 ,  G02B5/00 ,  G02B6/122

CPC分类号： G11B13/08 ,  G02B5/008 ,  G02B6/1226 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021 ,  Y10T428/1171 ,  Y10T428/1193

摘要： A plasmon-generator of the invention is configured to include a first configuration member including a near-field light generating end surface; and a second configuration member joined and integrated with the first configuration member and not including the near-field light generating end surface. The first configuration member is configured to contain Au as a primary component and to contain any one or more elements selected from a group of Co, Fe, Sb, Nb, Zr, Ti, Hf, and Ta, and is configured so that a content percentage X1 of the contained element is within a range between 0.2 at % or more and 2.0 at % or less. Thereby, thermostability, optical characteristic, and the process stability are satisfied. Also, heat dissipation and heat generation suppression effect are extremely superior.

摘要翻译： 本发明的等离子体发生器被构造成包括包括近场光产生端面的第一配置构件; 以及第二构造构件，其与所述第一构造构件接合并且一体化，并且不包括所述近场光产生端面。 第一配置构件被配置为包含Au作为主要成分并且包含选自Co，Fe，Sb，Nb，Zr，Ti，Hf和Ta中的任何一种或多种元素，并且被配置为使得含量 所含有的元素的X1的比例在0.2at％以上且2.0at％以下的范围内。 由此，满足热稳定性，光学特性和工艺稳定性。 此外，散热和发热抑制效果非常优异。