公开(公告)号：US20150035622A1

公开(公告)日：2015-02-05

申请号：US14450200

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01P1/20

CPC classification number: H03H7/0115 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0161 ,  H03H7/0169 ,  H03H7/09 ,  H03H7/12 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: RF communications circuitry includes an RF filter structure, which includes a group of resonators, a group of cross-coupling capacitive structures, and a group of egress/ingress capacitive structures, is disclosed. Each of the group of cross-coupling capacitive structures is coupled between two of the group of resonators. A first portion of the group of egress/ingress capacitive structures is coupled between a first connection node and the group of resonators. A second portion of the group of egress/ingress capacitive structures is coupled between a second connection node and the group of resonators.

Abstract translation: RF通信电路包括RF滤波器结构，其包括一组谐振器，一组交叉耦合电容结构以及一组出口/入口电容结构。 交叉耦合电容结构中的每一个耦合在该组谐振器中的两个之间。 出口/入口电容结构组的第一部分耦合在第一连接节点和谐振器组之间。 出口/入口电容结构组的第二部分耦合在第二连接节点和谐振器组之间。

公开(公告)号：US20140364077A1

公开(公告)日：2014-12-11

申请号：US14298852

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B1/10

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.

Abstract translation: 公开了包括第一RF滤波器结构和控制电路的RF通信电路。 第一RF滤波器结构包括一对弱耦合谐振器和第一可调谐RF滤波器。 控制电路提供第一滤波器控制信号。 第一可调谐RF滤波器接收并过滤上行RF信号以提供第一滤波RF信号，使得第一可调谐RF滤波器的中心频率基于第一滤波器控制信号。

公开(公告)号：US20140361856A1

公开(公告)日：2014-12-11

申请号：US14298834

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Baker Scott ,  George Maxim

IPC: H03H11/04

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: Embodiments of radio frequency (RF) devices are disclosed having interconnection paths with capacitive structures having improved quality (Q) factors. In one embodiment, an RF device includes an inductor having an inductor terminal and a semiconductor die. The semiconductor die includes one or more active semiconductor devices that include a device contact. The device contact provided by the one or more active semiconductor devices is positioned so as to be vertically aligned directly below the inductor terminal. The inductor terminal and the device contact are electrically connected with an interconnection path that includes a capacitive structure. To prevent or reduce current crowding, the interconnection path is vertically aligned so as to extend directly between the inductor terminal and the device contact. In this manner, the interconnection path electrically connects the inductor terminal and the device contact without degrading the Q factor of the RF device.

Abstract translation: 公开了射频（RF）装置的实施例，其具有具有改进的质量（Q）因素的电容结构的互连路径。 在一个实施例中，RF器件包括具有电感器端子和半导体管芯的电感器。 半导体管芯包括一个或多个包括器件接触的有源半导体器件。 由一个或多个有源半导体器件提供的器件触点被定位成在电感器端子的正下方垂直对齐。 电感器端子和器件触点与包括电容结构的互连路径电连接。 为了防止或减少电流拥挤，互连线路垂直对准，以便直接在电感器端子和器件触点之间延伸。 以这种方式，互连路径将电感器端子和器件接触电连接，而不降低RF器件的Q因子。

公开(公告)号：US20140266544A1

公开(公告)日：2014-09-18

申请号：US14099007

申请日：2013-12-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Danny W. Chang ,  George Maxim

IPC: H01F5/00

CPC classification number: H01F5/003 ,  H01F17/0013 ,  H01F2017/002 ,  H01F2017/0073

Abstract: The present disclosure provides a vertical inductor structure in which the magnetic field is closed such that the magnetic field of the vertical inductor structure is cancelled in the design direction outside the vertical inductor structure, yielding a small, or substantially zero, coupling factor of the vertical inductor structure. In one embodiment, several vertical inductor structures of the present disclosure can be placed in close proximity to create small resonant circuits and filter chains.

Abstract translation: 本公开提供了垂直电感器结构，其中磁场被闭合，使得垂直电感器结构的磁场在垂直电感器结构外部的设计方向上消除，产生垂直的垂直电感器结构的小的或基本为零的耦合因子 电感结构。 在一个实施例中，本公开的几个垂直电感器结构可以紧邻地设置，以产生小的谐振电路和滤波器链。