公开(公告)号：US09917093B2

公开(公告)日：2018-03-13

申请号：US15195446

申请日：2016-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Cheng-Chung Chu ,  Jayavel Pachamuthu ,  Tuan Pham ,  Fumitoshi Ito ,  Masaaki Higashitani

IPC: H01L29/788 ,  H01L27/11556 ,  H01L23/522 ,  H01L21/22 ,  H01L21/768 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L29/417

CPC classification number: H01L27/11582 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: A three-dimensional memory device includes a plurality of planes, each having a respective alternating stack, strings of memory stack structures which extends through the respective alternating stack, and backside contact via structures vertically extending through the respective alternating stack, extending generally along the first horizontal direction, and laterally separating neighboring pairs of strings of memory stack structures along a second horizontal direction. A first plane includes a first plurality of strings that are laterally spaced apart along the second horizontal direction by a first plurality of backside contact via structures. A second plane laterally shifted from the first plane along the first horizontal direction and including a second plurality of strings that are laterally spaced apart along the second horizontal direction by a second plurality of backside contact via structures which are laterally offset with respect the first plurality of backside contact via structures along the second horizontal direction.

公开(公告)号：US09685484B1

公开(公告)日：2017-06-20

申请号：US15215263

申请日：2016-07-20

Applicant: SanDisk Technologies LLC

Inventor： Peter Rabkin ,  Perumal Ratnam ,  Masaaki Higashitani ,  Chris Petti

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/146

Abstract: Technology is described for reversible resistivity memory having a crystalline silicon bit line. In one aspect, a memory structure comprises a hollow pillar of crystalline silicon inside of reversible resistivity material. The crystalline silicon may serve as a bit line. The memory structure may further comprise conductive material that forms word lines coupled to the outer surface of the reversible resistivity material. A memory cell comprises a portion of the reversible resistivity material between the crystalline silicon and one of the word lines. In one aspect, the hollow pillar of crystalline silicon surrounds a gate oxide, which surrounds a conductive transistor gate. Thus, the hollow pillar of crystalline silicon may function as a channel of a transistor. In one aspect, the crystalline silicon has predominantly a (100) orientation with respect to an inner surface of the reversible resistivity material. In one aspect, the crystalline silicon is a single crystal.