LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

    公开(公告)号:US20210057668A1

    公开(公告)日:2021-02-25

    申请号:US17094374

    申请日:2020-11-10

    Abstract: Provided is a light-emitting element including a fluorescence-emitting material with high emission efficiency. The light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first organic compound, a second organic compound, and a guest material. The first organic compound has a function of emitting a thermally activated delayed fluorescence at room temperature. The guest material has a function of emitting fluorescence. A HOMO level of the first organic compound higher than or equal to a HOMO level of the second organic compound. A LUMO level of the first organic compound is lower than or equal to a LUMO level of the second organic compound.

    Electronic Device, Light-Emitting Device, Electronic Appliance, and Lighting Device

    公开(公告)号:US20200176692A1

    公开(公告)日:2020-06-04

    申请号:US16613245

    申请日:2018-05-11

    Abstract: An electronic device with high outcoupling efficiency or a high light-trapping effect is provided.The electronic device includes a first layer and a second layer between a first electrode and a second electrode, the first layer is included between the first electrode and the second layer, the first layer includes a first organic compound and a first substance, the refractive index of a thin film of the first organic compound is higher than or equal to 1 and lower than or equal to 1.75, the first substance has an electron-accepting property, and the second layer has a function of emitting or absorbing light.

    THIN FILM TRANSISTOR
    109.
    发明申请
    THIN FILM TRANSISTOR 有权
    薄膜晶体管

    公开(公告)号:US20130270525A1

    公开(公告)日:2013-10-17

    申请号:US13633900

    申请日:2012-10-03

    Abstract: A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity.

    Abstract translation: 薄膜晶体管包括覆盖栅电极的栅极绝缘层,与栅极绝缘层接触的半导体层和与半导体层的一部分接触并形成源极区域和漏极区域的杂质半导体层。 半导体层包括形成在栅极绝缘层上的微晶半导体层和含有与微晶半导体层接触的氮的微晶半导体区域。 可以以高生产率制造截止电流小且导通电流大的薄膜晶体管。

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