公开(公告)号：US10790184B2

公开(公告)日：2020-09-29

申请号：US16211949

申请日：2018-12-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Chun Lin ,  Tien-Shao Chuang ,  Kuang-Cheng Tai ,  Chun-Hung Chen ,  Chih-Hung Hsieh ,  Kuo-Hua Pan ,  Jhon-Jhy Liaw

IPC: H01L27/088 ,  H01L27/092 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate including a first well region and a second well region that have different conductivity types and are adjacent to each other. A first fin structure protrudes from the semiconductor substrate and is formed in the first well region. A second fin structure protrudes from the semiconductor substrate and is formed in the second well region and adjacent to the first fin structure. A first multi-step isolation structure that includes a first isolation portion is formed between the first fin structure and the second fin structure. A second isolation portion extends from the bottom surface of the first isolation portion. The second isolation portion has a top width that is narrower than the bottom width of the first isolation portion.

公开(公告)号：US10347750B2

公开(公告)日：2019-07-09

申请号：US15484474

申请日：2017-04-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Heng Tsai ,  Chun-Sheng Liang ,  Kuo-Hua Pan

IPC: H01L29/66 ,  H01L29/78 ,  H01L27/108 ,  H01L27/088 ,  H01L21/84 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, at least one gate, and an insulating structure. The substrate includes at least one semiconductor fin. The gate is disposed on the semiconductor fin. The gate has at least one end sidewall. The insulating structure is disposed adjacent to the gate. The insulating structure has a sidewall facing the gate, and the end sidewall of the gate is in contact with a portion of the sidewall of the insulating structure while leaves another portion of the sidewall of the insulating structure uncovered.

公开(公告)号：US20190067276A1

公开(公告)日：2019-02-28

申请号：US15686860

申请日：2017-08-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Che Tsai ,  Min-Yann Hsieh ,  Hua Feng Chen ,  Kuo-Hua Pan

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/45 ,  H01L21/8234 ,  H01L21/768 ,  H01L21/764 ,  H01L21/311 ,  H01L21/762

Abstract: Embodiments of the disclosure provide a semiconductor device including a substrate, an insulating layer formed over the substrate, a plurality of fins formed vertically from a surface of the substrate, the fins extending through the insulating layer and above a top surface of the insulating layer, a gate structure formed over a portion of fins and over the top surface of the insulating layer, a source/drain structure disposed adjacent to opposing sides of the gate structure, the source/drain structure contacting the fin, a dielectric layer formed over the insulating layer, a first contact trench extending a first depth through the dielectric layer to expose the source/drain structure, the first contact trench containing an electrical conductive material, and a second contact trench extending a second depth into the dielectric layer, the second contact trench containing the electrical conductive material, and the second depth is greater than the first depth.

公开(公告)号：US20180308797A1

公开(公告)日：2018-10-25

申请号：US15496067

申请日：2017-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Che Tsai ,  Min-Yann Hsieh ,  Hua-Feng Chen ,  Kuo-Hua Pan

IPC: H01L23/535 ,  H01L23/528 ,  H01L29/08 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5283 ,  H01L29/0847 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, an inter-layer dielectric layer, a contact plug, and a contact hole liner. The substrate has a source/drain region. The inter-layer dielectric layer is over the substrate and has a contact hole therein. The contact plug is electrically connected to the source/drain region through the contact hole of the inter-layer dielectric layer. The contact hole liner extends between the contact plug and a sidewall of a first portion of the contact hole. The contact hole liner terminates prior to reaching a second portion of the contact hole. The first portion is between the second portion and the source/drain region.

公开(公告)号：US20180151691A1

公开(公告)日：2018-05-31

申请号：US15484474

申请日：2017-04-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Heng Tsai ,  Chun-Sheng Liang ,  Kuo-Hua Pan

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/10879 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate, at least one gate, and an insulating structure. The substrate includes at least one semiconductor fin. The gate is disposed on the semiconductor fin. The gate has at least one end sidewall. The insulating structure is disposed adjacent to the gate. The insulating structure has a sidewall facing the gate, and the end sidewall of the gate is in contact with a portion of the sidewall of the insulating structure while leaves another portion of the sidewall of the insulating structure uncovered.