公开(公告)号：US20210159859A1

公开(公告)日：2021-05-27

申请号：US17027728

申请日：2020-09-22

Applicant: RichWave Technology Corp.

Inventor： Ting-Yuan Cheng

IPC: H03F3/04 ,  H03K19/0175

Abstract: An amplifying apparatus and a voltage-to-current conversion apparatus are provided. The amplifying apparatus includes a zero point generating circuit, a level shift circuit, a transistor, and an amplifying circuit. A first terminal of the zero point generating circuit is coupled to an output terminal of the amplifying apparatus. A first terminal of the level shift circuit is coupled to the output terminal of the amplifying apparatus. A first terminal of the transistor is coupled to a supply voltage. A second terminal of the transistor is coupled to the output terminal of the amplifying apparatus. A control terminal of the transistor is coupled to a second terminal of the level shift circuit. An input terminal of the amplifying circuit is coupled to an input terminal of the amplifying apparatus. An output terminal of the amplifying circuit is coupled to the output terminal of the amplifying apparatus.

公开(公告)号：US20210091727A1

公开(公告)日：2021-03-25

申请号：US16945916

申请日：2020-08-02

Applicant: RichWave Technology Corp.

Inventor： Hwey-Ching Chien ,  Chih-Sheng Chen ,  Jhao-Yi Lin ,  Ching-Wen Hsu

IPC: H03F1/56 ,  H03L7/089

Abstract: The frequency detector includes a first impedance circuit and a second impedance circuit. The first impedance circuit has a first terminal for receiving an input signal, and a second terminal for outputting a divisional signal. The second impedance circuit has a first terminal coupled to the second terminal of the first impedance circuit, and a second terminal coupled to a first system voltage terminal. The frequency response of the first impedance circuit is different from a frequency response of the second impedance circuit. The resistance of the first impedance circuit, a resistance of the second impedance circuit, and the divisional signal change with a frequency of the input signal.

公开(公告)号：US20210058037A1

公开(公告)日：2021-02-25

申请号：US17093504

申请日：2020-11-09

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tien-Yun Peng ,  Hung-Chia Lo

IPC: H03F1/02 ,  H03F1/30 ,  H03F3/213 ,  H03F3/68 ,  H03F3/45

Abstract: An amplifier device includes an amplifying unit and a bias module. The amplifying unit has a first end coupled to a voltage source configured to receive a source voltage, a second end configured to receive an input signal, and a third end coupled to a first reference potential terminal configured to receive a first reference potential. The first end of the amplifying unit is configured to output an output signal amplified by the amplifying unit. The bias module is coupled to the second end of the amplifying unit, and configured to receive a voltage signal to generate a bias current according to a first counter-gradient and a second counter-gradient, and provide the bias current to the amplifying unit. The voltage signal is a variable voltage. A supply current flowing into the amplifying unit and is adjusted in accordance with the voltage signal to stay within a predetermined range.

公开(公告)号：US20200303545A1

公开(公告)日：2020-09-24

申请号：US16823337

申请日：2020-03-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Shyh-Chyi Wong ,  Shu-Yuan Hsu

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/08

Abstract: An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.

公开(公告)号：US20200052693A1

公开(公告)日：2020-02-13

申请号：US16166177

申请日：2018-10-22

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Ming-Shiuan Wen

IPC: H03K17/693 ,  H03K17/00 ,  H04B1/48

Abstract: A radio frequency (RF) device and its voltage generating circuit are provided. The RF device includes the voltage generating circuit and a RF circuit. The voltage generating circuit receives a RF signal and generates at least one bias voltage related to the RF signal. The RF circuit is used to receive the RF signal. The RF circuit is coupled to the voltage generating circuit to receive the bias voltage. The bias voltage is used to operate the conduction state of at least one RF transmission path of the RF circuit.

公开(公告)号：US20200043911A1

公开(公告)日：2020-02-06

申请号：US16522677

申请日：2019-07-26

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao

IPC: H01L27/02 ,  H02H9/04

Abstract: An anti-parallel diode device includes a first semiconductor, a second semiconductor, a third semiconductor, and a third diode. The first semiconductor is of a first conductivity type, and the second semiconductor and the third semiconductor are of a second conductivity type. The second semiconductor is in contact with the first semiconductor, so that the first semiconductor and the second semiconductor form a first diode. The third semiconductor is in contact with the first semiconductor, so that the first semiconductor and the third semiconductor form a second diode. A first terminal of the third diode is electrically connected to the first semiconductor. The first terminal of the third diode is of the second conductivity type.

公开(公告)号：US20200028357A1

公开(公告)日：2020-01-23

申请号：US16515015

申请日：2019-07-17

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tsung-Han Lee ,  Chuan-Chen Chao

IPC: H02H9/04 ,  H03K17/693 ,  H05K1/02 ,  H02M7/48

Abstract: A signal switching apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipating circuit. The signal control switch coupled between a first signal transceiving end and a second signal transceiving end is turned on or turned off according to a first control signal. The switch circuit having at least one first transistor is controlled by a second control signal to be turned on or off, and a first end of the switch circuit is coupled to the first signal transceiving end. The blocking capacitor is coupled between a second end of the switch circuit and a reference voltage terminal. The surge current dissipating circuit having at least one second transistor is coupled between the second end of the switch circuit and the reference voltage terminal. The second transistor is configured to dissipate a surge current and also turned off when operated normally.

公开(公告)号：US10516370B2

公开(公告)日：2019-12-24

申请号：US16452549

申请日：2019-06-26

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Pei-Chuan Hsieh

IPC: H03F1/32 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21

Abstract: A predistorter has a first capacitor, a first bias input circuit, a second bias input circuit, a second capacitor and an impedance conversion circuit. A first end of the first capacitor is coupled to a first node of the amplifier. The impedance conversion circuit has a first resistor and a field-effect transistor (FET) and is used to perform an impedance conversion to provide a variable capacitance. A gate of the FET is coupled to an output end of the first bias input circuit, one of a source and a drain of the FET is coupled to a second end of the first capacitor and a first end of the first resistor, and another of the source and the drain of the FET is coupled to an output end of the second bias input circuit, first end of the second capacitor and a second end of the first resistor.

公开(公告)号：US10454479B2

公开(公告)日：2019-10-22

申请号：US16111238

申请日：2018-08-24

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Tien-Yun Peng

IPC: H03K19/003 ,  H03K19/00 ,  H03K19/017 ,  H03K19/20

Abstract: An inverter includes a first system voltage terminal, a second system voltage terminal, an output terminal, a plurality of P-type transistors, a plurality of N-type transistors, and a voltage drop impedance element. The first system voltage terminal receives a first voltage, and the second system voltage terminal receives a second voltage. The plurality of P-type transistors are coupled in series between the first system voltage terminal and the output terminal. The plurality of N-type transistors are coupled in series between the output terminal and the second system voltage terminal. The voltage drop impedance element is coupled in parallel with a first N-type transistor of the plurality of N-type transistors, and the impedance of the voltage drop impedance element is smaller than the impedance of the first N-type transistor when the first N-type transistor is turned off.

公开(公告)号：US10411657B2

公开(公告)日：2019-09-10

申请号：US16264701

申请日：2019-02-01

Applicant: RichWave Technology Corp.

Inventor： Chih-Sheng Chen ,  Chang-Yi Chen

IPC: H01F5/00 ,  H03F1/56 ,  H03F3/195 ,  H03F3/21 ,  H03F3/45 ,  H01F27/28 ,  H01F19/08

Abstract: A transformer has a first winding, a second winding, a third winding, a fourth winding and a fifth winding. The fifth winding has a first part and a second part serially connected to the first part. The first part is magnetically coupled to the second winding and magnetically isolated from the first winding, and the second part is magnetically coupled to the fourth winding and magnetically isolated from the third winding. The second winding is positioned between the first winding and the first part, the first winding is positioned adjacent to the second winding, and the second winding is positioned adjacent to the first part. The fourth winding is positioned between the third winding and the second part, the third winding is positioned adjacent to the fourth winding, and the fourth winding is positioned adjacent to the second part.