Micro high-vacuum pressure sensor
    101.
    发明申请
    Micro high-vacuum pressure sensor 审中-公开
    微型高真空压力传感器

    公开(公告)号:US20020186017A1

    公开(公告)日:2002-12-12

    申请号:US09879356

    申请日:2001-06-11

    Inventor: John Liebeskind

    CPC classification number: G01L1/005 G01L21/32 G01L21/34

    Abstract: A micro pressure sensor for inclusion within a low-pressure microelectronic device enclosure. The micro pressure sensor employs an electric field created by applying a large voltage potential difference to tiny conductive elements within the micro pressure sensor. Electrons emitted via the influence of, and accelerated by, the electric field collide with gas molecules to produce positive ions. The positive ions are then accelerated toward a conductive element coupled to a circuit. The current generated by the ions within the circuit coupled to the micro pressure sensor can be measured to determine the internal pressure within the low-pressure enclosure. The micro pressure sensor is manufactured by standard semiconductor fabrication techniques, and can be economically produced in large volumes.

    Abstract translation: 用于包含在低压微电子器件外壳内的微压力传感器。 微压力传感器采用通过对微压力传感器内的微小导电元件施加大的电压电位而产生的电场。 通过电场的影响而发射的电子与气体分子碰撞产生正离子。 然后将正离子加速到耦合到电路的导电元件。 耦合到微压力传感器的电路内的离子产生的电流可以被测量以确定低压外壳内的内部压力。 微压力传感器由标准的半导体制造技术制造,并且可以经济地大量生产。

    Sensing transducer using a Schottky junction and having an increased
output signal voltage
    104.
    发明授权
    Sensing transducer using a Schottky junction and having an increased output signal voltage 失效
    感应传感器使用肖特基结并具有增加的输出信号电压

    公开(公告)号:US5528069A

    公开(公告)日:1996-06-18

    申请号:US528878

    申请日:1995-09-15

    CPC classification number: G01L1/005 G01L9/0098

    Abstract: A sensing transducer (10,30) and a method therefor uses a Schottky junction (12) having a conductive layer (16) disposed on a semiconductor substrate (14). The conductive layer (16) is generally formed from the reaction of a metal with a portion of the semiconductor substrate (14). One example of the conductive layer (16) is a metal silicide layer. In one pressure sensing approach, a substantially constant reverse current (I.sub.1) is applied to the Schottky junction (12). The change in reverse output voltage of the junction (12) is proportional to the change in pressure on the junction (12) itself, and can thus be used to sense pressure. This output voltage change is significantly higher than that achieved with prior pressure transducers and permits the output signal of the transducer (10,30) according to the present invention to be substantially used without extra amplification or other conditioning.

    Abstract translation: 感测传感器(10,30)及其方法使用具有设置在半导体衬底(14)上的导电层(16)的肖特基结(12)。 导电层(16)通常由金属与半导体衬底(14)的一部分的反应形成。 导电层(16)的一个例子是金属硅化物层。 在一种压力感测方法中,将基本上恒定的反向电流(I1)施加到肖特基结(12)。 结(12)的反向输出电压的变化与结(12)本身的压力变化成比例,因此可用于感测压力。 该输出电压变化明显高于用现有压力传感器实现的输出电压变化,并允许基本上使用根据本发明的换能器(10,30)的输出信号而无需额外的放大或其它调节。

    Force detecting sensor and method of making
    105.
    发明授权
    Force detecting sensor and method of making 失效
    力检测传感器及其制作方法

    公开(公告)号:US5526703A

    公开(公告)日:1996-06-18

    申请号:US934880

    申请日:1992-08-21

    CPC classification number: G01L1/005

    Abstract: A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.

    Abstract translation: 力检测微传感器包括单晶Si衬底,形成在衬底上的单晶锥体和安装在Si锥体尖端上方的弹性电极。 Si锥形尖端与弹性电极之间的空间保持在真空环境中,尖端与弹性阳极之间的距离为几个原子直径的数量级。 当电势施加到弹性电极和Si锥尖时,电子的隧道效应发生在Si锥体的尖端和弹性电极之间。 弹性电极由于作用在微传感器上的力而偏转。 弹性电极的挠曲改变了弹性电极和Si锥尖之间的电特性。 可以测量电特性的变化以确定作用在微传感器上的力的水平。 根据本发明的制造微传感器的方法包括以下步骤:在衬底上形成绝缘层和支撑层,在绝缘层中形成凹槽和支撑层中的孔,在衬底上沉积单晶Si锥体并完全 将Si锥体包围在支撑层和绝缘层的凹槽内。

    Method of making a force detecting sensor
    106.
    发明授权
    Method of making a force detecting sensor 失效
    制造力检测传感器的方法

    公开(公告)号:US5424241A

    公开(公告)日:1995-06-13

    申请号:US259395

    申请日:1994-06-14

    CPC classification number: G01L1/005

    Abstract: A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.

    Abstract translation: 力检测微传感器包括单晶Si衬底,形成在衬底上的单晶锥体和安装在Si锥体尖端上方的弹性电极。 Si锥形尖端与弹性电极之间的空间保持在真空环境中,尖端与弹性阳极之间的距离为几个原子直径的数量级。 当电势施加到弹性电极和Si锥尖时,电子的隧道效应发生在Si锥体的尖端和弹性电极之间。 弹性电极由于作用在微传感器上的力而偏转。 弹性电极的挠曲改变了弹性电极和Si锥尖之间的电特性。 可以测量电特性的变化以确定作用在微传感器上的力的水平。 根据本发明的制造微传感器的方法包括以下步骤:在衬底上形成绝缘层和支撑层,在绝缘层中形成凹槽和支撑层中的孔,在衬底上沉积单晶Si锥体并完全 将Si锥体包围在支撑层和绝缘层的凹槽内。

    Miniature pressure sensor and pressure sensor arrays
    107.
    发明授权
    Miniature pressure sensor and pressure sensor arrays 失效
    微型压力传感器和压力传感器阵列

    公开(公告)号:US5163328A

    公开(公告)日:1992-11-17

    申请号:US563199

    申请日:1990-08-06

    Abstract: An improved pressure sensor element and pressure sensor array is formed by a cathode layer, a cathode tip attached to the cathode layer, and an anode layer opposing the cathode layer. The magnitude of the electron current flowing between the cathode tip and the anode layer is dependant on the field strength at the cathode tip, which is dependant on the separation between the cathode tip and the anode layer. As a deflectable anode layer is deflected towards the cathode tip, the field strength increases, causing a corresponding change in the magnitude of the flow of electrons. The cathode tip is separated from the anode layer such that electron current is produced at relatively low voltages by tunneling or field emission. The exact method of current production is selected by controlling the initial separation between the anode layer and the cathode tip. Pressure sensor elements are produced using a series of fabrication processes including forming a hole in an insulating layer deposited on the cathode layer, depositing a cathode having a cathode tip into the hole thus formed, and bonding the anode layer onto the insulating layer, thereby forming a pressure sensor element. A plurality of pressure sensor elements are fabricated into pressure sensor arrays by this method. Pressure sensor elements or pressure sensor arrays are thus produced at low cost.

    Abstract translation: 改进的压力传感器元件和压力传感器阵列由阴极层,连接到阴极层的阴极尖端和与阴极层相对的阳极层形成。 在阴极尖端和阳极层之间流动的电子电流的大小取决于阴极尖端处的场强,这取决于阴极尖端和阳极层之间的间隔。 当可偏转阳极层朝向阴极尖端偏转时,场强增加,导致电子流量的相应变化。 阴极尖端与阳极层分离,使得通过隧道或场发射在相对较低的电压下产生电子电流。 通过控制阳极层和阴极尖端之间的初始分离来选择当前生产的确切方法。 使用一系列制造工艺制造压力传感器元件,包括在沉积在阴极层上的绝缘层中形成一个孔,将具有阴极尖端的阴极沉积到如此形成的孔中,并将阳极层接合到绝缘层上,从而形成 压力传感器元件。 通过这种方法将多个压力传感器元件制成压力传感器阵列。 因此以低成本生产压力传感器元件或压力传感器阵列。

    Field-based movement sensor
    108.
    发明授权
    Field-based movement sensor 失效
    基于场的运动传感器

    公开(公告)号:US4964306A

    公开(公告)日:1990-10-23

    申请号:US332593

    申请日:1989-04-03

    CPC classification number: G01L1/005 G01L1/14 G01L1/2293

    Abstract: A field-based movement sensor adapted for measuring strain along a certain axis in an object on which the sensor is attached. The sensor includes a substrate having a working surface and formed with a pair of fingers projecting from a first direction, and a third finger projecting from a direction opposite the first direction, to a position between the pair of fingers. The pair of fingers and third finger extend generally perpendicular to the axis along which strain is to be measured, with the pair of fingers being moveable with respect to the third finger along the axis when the strain occurs. An electrically charged element for producing an electric field is disposed on the working surface of the third finger, and a pair of field-effect transistors (FETS) are each disposed on a working surface of a different one of the pair of fingers. As the object is subjected to strain causing the pair of fingers to move relative to the third finger, the variations in the strength of the electric field from the charged elements to the FETS is determined and this provides a measure of the variation in distance between the third finger and the pair of fingers and this, in turn, provides a measure of the strain in the object to which the substrate is attached.

    Triboelectric nanogenerator using ionic elastomer

    公开(公告)号:US12095389B2

    公开(公告)日:2024-09-17

    申请号:US17264580

    申请日:2019-07-26

    CPC classification number: H02N1/04 G01L1/005

    Abstract: The present invention relates to an triboelectric nanogenerator using an ionic elastomer that increases internal electric capacity and allows a large amount of electric charge to be located on a surface to generate a large amount of electrical energy. The triboelectric nanogenerator according to the present invention includes a first electrode; an ionic elastomer disposed on the first electrode and including an elastomer and an ionic liquid; a second electrode disposed to be spaced apart from the first electrode and electrically connected to the first electrode; and an insulator disposed under the second electrode, selectively contacting the ionic elastomer, and formed of a material that has a negative charge compared to the ionic elastomer. In this case, the ionic elastomer and the insulator are brought into contact with each other or are separated from each other by external force, and electrical energy is generated between the first and second electrodes when the ionic elastomer and the insulator are brought into contact with each other and separated from each other.

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