Abstract:
A micro pressure sensor for inclusion within a low-pressure microelectronic device enclosure. The micro pressure sensor employs an electric field created by applying a large voltage potential difference to tiny conductive elements within the micro pressure sensor. Electrons emitted via the influence of, and accelerated by, the electric field collide with gas molecules to produce positive ions. The positive ions are then accelerated toward a conductive element coupled to a circuit. The current generated by the ions within the circuit coupled to the micro pressure sensor can be measured to determine the internal pressure within the low-pressure enclosure. The micro pressure sensor is manufactured by standard semiconductor fabrication techniques, and can be economically produced in large volumes.
Abstract:
Method and equipment easily visualize various physical phenomena or chemical phenomena by simultaneously taking in, accumulating, and transferring data at a plurality of points. Electric charge is injected in potential wells constructed to vary the depth in accord with the magnitude of the physical or chemical quantity, and the physical or chemical quantity is converted into electric charge according to the depth of the potential wells.
Abstract:
Displacement measuring apparatus for measuring the displacement and movement of an object includes a sensor having an operative surface and circuitry for producing an electrical output signal whose value is dependent upon the area of the operative surface covered by an electrical/magnetic field producing member. The apparatus also includes an elongate, flexible band capable of producing an electric/magnetic field, where the band is attached at one end to the sensor to roll over and cover or unroll from over and uncover the operative surface as the object whose displacement is to be measured is moved. The value of the electrical output signal produced by the circuitry is thus dependent upon the area of the operative surface covered by the band and thus by the position and movement of the object.
Abstract:
A sensing transducer (10,30) and a method therefor uses a Schottky junction (12) having a conductive layer (16) disposed on a semiconductor substrate (14). The conductive layer (16) is generally formed from the reaction of a metal with a portion of the semiconductor substrate (14). One example of the conductive layer (16) is a metal silicide layer. In one pressure sensing approach, a substantially constant reverse current (I.sub.1) is applied to the Schottky junction (12). The change in reverse output voltage of the junction (12) is proportional to the change in pressure on the junction (12) itself, and can thus be used to sense pressure. This output voltage change is significantly higher than that achieved with prior pressure transducers and permits the output signal of the transducer (10,30) according to the present invention to be substantially used without extra amplification or other conditioning.
Abstract:
A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
Abstract:
A force detecting microsensor comprises a single crystal Si substrate, a single crystal cone formed on the substrate and a resilient electrode mounted above the tip of the Si cone. The space between the tip of the Si cone and the resilient electrode is maintained in a vacuum environment and the distance between the tip and the resilient anode is in the order of a few atomic diameters. The tunneling effect of electrons occurs between the tip of the Si cone and the resilient electrode when a potential is applied to the resilient electrode and the Si cone tip. The resilient electrode deflects as a result of the force acting on the microsensor. The deflection of the resilient electrode alters the electrical characteristics between the resilient electrode and the Si cone tip. The changes in the electrical characteristics can be measured to determine the level of force acting on the microsensor. The process for making the microsensor according to the invention comprises the steps of forming an insulating layer and support layer on the substrate, forming a recess in the insulating layer and aperture in the support layer, depositing a single crystal Si cone on the substrate and fully enclosing the Si cone within the recess of the support layer and the insulating layer.
Abstract:
An improved pressure sensor element and pressure sensor array is formed by a cathode layer, a cathode tip attached to the cathode layer, and an anode layer opposing the cathode layer. The magnitude of the electron current flowing between the cathode tip and the anode layer is dependant on the field strength at the cathode tip, which is dependant on the separation between the cathode tip and the anode layer. As a deflectable anode layer is deflected towards the cathode tip, the field strength increases, causing a corresponding change in the magnitude of the flow of electrons. The cathode tip is separated from the anode layer such that electron current is produced at relatively low voltages by tunneling or field emission. The exact method of current production is selected by controlling the initial separation between the anode layer and the cathode tip. Pressure sensor elements are produced using a series of fabrication processes including forming a hole in an insulating layer deposited on the cathode layer, depositing a cathode having a cathode tip into the hole thus formed, and bonding the anode layer onto the insulating layer, thereby forming a pressure sensor element. A plurality of pressure sensor elements are fabricated into pressure sensor arrays by this method. Pressure sensor elements or pressure sensor arrays are thus produced at low cost.
Abstract:
A field-based movement sensor adapted for measuring strain along a certain axis in an object on which the sensor is attached. The sensor includes a substrate having a working surface and formed with a pair of fingers projecting from a first direction, and a third finger projecting from a direction opposite the first direction, to a position between the pair of fingers. The pair of fingers and third finger extend generally perpendicular to the axis along which strain is to be measured, with the pair of fingers being moveable with respect to the third finger along the axis when the strain occurs. An electrically charged element for producing an electric field is disposed on the working surface of the third finger, and a pair of field-effect transistors (FETS) are each disposed on a working surface of a different one of the pair of fingers. As the object is subjected to strain causing the pair of fingers to move relative to the third finger, the variations in the strength of the electric field from the charged elements to the FETS is determined and this provides a measure of the variation in distance between the third finger and the pair of fingers and this, in turn, provides a measure of the strain in the object to which the substrate is attached.
Abstract:
A triboelectric film and its laminate that utilize a conductive primer are provided. The triboelectric effect is a type of contact electrification such that with a suitable configuration, a current may flow from one region to another. When decorative triboelectric films are touched, electrical charges are built up and the generated electrical charges between a human body and films flow through a conductive primer. This system based on the triboelectric effect and the conductive primer can provide electrical functions to decorative film products without there being any large changes.
Abstract:
The present invention relates to an triboelectric nanogenerator using an ionic elastomer that increases internal electric capacity and allows a large amount of electric charge to be located on a surface to generate a large amount of electrical energy. The triboelectric nanogenerator according to the present invention includes a first electrode; an ionic elastomer disposed on the first electrode and including an elastomer and an ionic liquid; a second electrode disposed to be spaced apart from the first electrode and electrically connected to the first electrode; and an insulator disposed under the second electrode, selectively contacting the ionic elastomer, and formed of a material that has a negative charge compared to the ionic elastomer. In this case, the ionic elastomer and the insulator are brought into contact with each other or are separated from each other by external force, and electrical energy is generated between the first and second electrodes when the ionic elastomer and the insulator are brought into contact with each other and separated from each other.