摘要:
A resistance variable memory apparatus (100) of the present invention is a resistance variable memory apparatus (100) using a resistance variable element (22) transitioning between plural resistance states in response to electric pulses of the same polarity, in which a series resistance setting unit (10) is configured to set a resistance value of the series current path and a parallel resistance setting unit (30) is configured to set a resistance value of a parallel current path such that the resistance values become resistance values at which a node potential is not larger than a second voltage level in a state where an electric pulse application device (50) is outputting a first electric pulse after the resistance variable element (22) has switched to the high-resistance state, and the node potential is not larger than a first voltage level in the state where the electric pulse application device (50) is outputting a second electric pulse after the resistance variable element (22) has switched to the low-resistance state.
摘要:
A method for identifying a quantitative trait loci for a complex trait that is exhibited by a plurality of organisms in a population. The population is divided into a plurality of sub-populations using a classification scheme. Depending on what is known about the population, either a supervised or unsupervised classification is used. The classification scheme is derived from a plurality of cellular constituent measurements obtained from each organism in the population. For each sub-population in the plurality of sub-populations, a quantitative genetic analysis is performed on the sub-population in order to identify one or more quantitative trait loci for the complex trait.
摘要:
An array of masked memory cells including a first memory cell in a first column and a second memory cell in a second different column, wherein the first memory cell is capable of being accessed, so as to output, dependent on a first binary mask signal, a first binary value at a first output and a second binary value at a second output or vice versa, wherein the second memory cell is capable of being accessed, so as to output, dependent on a second binary mask signal, a first binary value at a third output and a second binary value at a fourth output or vice versa, and wherein the second and the third outputs of the memory cells are connected to an identical bit line of the memory array.
摘要:
A ROM includes a ROM array, an address decoder, a control circuit, a precharge tracker, a precharge circuit, a reference word line, a reference bit line and a reference sense generator. The control circuit generates control signals for reading the ROM. The address decoder enables a bit line and a word line. The precharge tracker generates a programmable precharge signal, which is provided to the precharge circuit for precharging the enabled bit line. A reference word line is enabled based on the programmable precharge signal and the control signals for tracking the enabled word line. A reference bit line is enabled based on the reference word line for tracking the enabled bit line. The reference sense generator generates a programmable sense signal based on the reference bit line, the programmable precharge signal and the control signals for reading a bit cell corresponding to the enabled bit line and word line.
摘要:
Electronic apparatus, methods of forming the electronic apparatus, and methods of operating the electronic apparatus include a read only memory having a memory array of bit-lines, where the bit-lines are arranged such that each bit-line has a shared arrangement with one or more other bit-lines of the memory array. Each shared arrangement is structured to operably store a plurality of bits.
摘要:
A nonvolatile memory device including one-time programmable (OTP) unit cell is provided. The nonvolatile memory device includes: a unit cell; a detecting unit configured to detect data from the unit cell; and a read voltage varying unit configured to vary an input voltage and supply a varied read voltage to the unit cell.
摘要:
A memory device of the irreversibly electrically programmable type is provided with a memory cell having a dielectric zone disposed between a first electrode and second electrode. An access transistor is connected in series with the second electrode, and an auxiliary transistor is connected in series with the first electrode. The auxiliary transistor is biased to have a saturation current which is lower than a saturation current of the access transistor when both the auxiliary and access transistors are actuated. A number of the memory cells are arranged in a memory plane to form the memory device.
摘要:
Disclosed are apparatus, system and methods of programming and readout of a one-time programmable memory devise having an array of memory cells, where the cells include an anti-fuse element and an in-cell amplifier transistor. Circuitry configured for programming and correlated double sampling readout of the cells is also disclosed.
摘要:
The circuit arrangement comprises a symmetrically constructed comparator (3), a non-volatile memory cell (10) and a reference element (20). The comparator (3) exhibits a latching function, and is connected in a differential current path that joins the power supply terminal (9) to a reference potential terminal (8). The non-volatile memory cell (10) is connected in a first branch (35) of the differential current path, and the reference element (20) is connected in a second branch (55) of the differential current path.
摘要:
A method for designing a read-only memory (ROM), and related device, includes partitioning a dataset into two or more sub-datasets that each have the same address space, but are of a smaller bit-width than the original dataset. The sub-datasets are row collapsed, and then respective memory cells for the sub-datasets are provided. The output of the memory cells provides the output of the ROM. Each memory cell includes a decoder that maps addresses to word lines based on mapping information obtained during row collapsing, and a logic array driven by the decoder that encodes the data words of the sub-dataset.