摘要:
A blood vessel occluding device including a plug and an insertion means to permanently occlude a blood vessel. In one embodiment, the plug has a tapered shape and is made of a biocompatible material such as Silicone. The plug is inserted axially into the blood vessel and is gripped firmly by the walls of the blood vessel. The insertion device is a spring loaded device that has a spring activated needle; this insertion device provides the axial force to insert the plug into the blood vessel. The blood vessel occluding device allows the blood vessel to be occluded quickly and effectively.
摘要:
An item of jewelry includes a ring having a removable setting and a charm coupled to a short chain. The removable setting is removably coupled to a post upon which the chain carrying the charm can be attached. According to the presently preferred embodiment, the post is threaded and the setting has internal matching threads. The chain is preferably short enough so that when it is attached to the post, the charm does not hang between the wearer's fingers. The charms are preferably provided in a wide range of designs, including, but not limited to holiday themes, religious themes, astrological signs, varsity letters, graduation year, wedding themes, commercial characters such as Disney characters, TV characters, messages such as “I Love You”, etc. The interchangeable settings may include different color stones to match different color clothing, birth stones, etc.
摘要:
An improved surgical retraction apparatus (and corresponding method of operation) includes a plurality of rigid retraction members disposed about a central axis that move radially with respect to the central axis between a closed state and an open state. In the closed state, the retraction members form a central opening that is adapted to closely fit around the tubular section of a surgical port device. In the illustrative embodiments, a planetary gear train, cable assemblies and lever arms may be used to control radial movement of the retraction members with respect to the central axis.
摘要:
A family of high speed transistors and optoelectronic devices are obtained on a monolithic substrate by adding two sheets of planar doping together with a wideband cladding layer to the top of a pseudomorphic high electron mobility transistor (PHEMT) structure. The two sheets are of the same polarity which is opposite to the modulation doping of the PHEMT and they are separated by a lightly doped layer of specific thickness. The combination is separated from the PHEMT modulation doping by a specific thickness of undoped material. The charge sheets are thin and highly doped. The top charge sheet achieves low gate contact resistance and the bottom charge sheet defines the capacitance of the field-effect transistor (FET) with respect to the modulation doping layer of the PHEMT. The structure produces a pnp bipolar transistor, enhancement and depletion type FETs, a vertical cavity surface emitting laser, and a resonant cavity detectors.β
摘要:
A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices).In another aspect of the present invention, a high performance bipolar transistor device is realized from this structure by implanting p-type ions in a interdigitization pattern that forms a plurality of p-type ion implant regions on both sides of the p-type modulation doped quantum well structure to a depth that penetrates the n-type ohmic contact layer. The interdigitization pattern of the p-type implants reduces capacitance between the p-type modulation doped quantum well structure and the n-type ohmic contact layer to enable higher frequency operation.
摘要:
A hose-end sprayer has a selectively rotatable rotary valve received within the transverse bore of a housing which includes a carrier liquid inlet passage, a chemical liquid inlet passage and a discharge passage. The valve has a carrier liquid duct and a chemical liquid duct opening into the carrier duct for interconnecting the inlet passage in a first rotative position of the valve, and the valve is capable of closing the inlet passages in a second rotative position of the valve. The rotary valve is selectively rotatable in a third position for interconnecting the liquid passage only with the discharge passage in a rinse position of the valve. Container venting is isolated from a valve chamber in which the rotary valve operates to avoid entry of carrier liquid into the container through the open vent in the ON position of the valve upon its selective rotation.