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    SOI Schottky Source/Drain Device Structure to Control Encroachment and Delamination of Silicide
    113.
    发明申请
    SOI Schottky Source/Drain Device Structure to Control Encroachment and Delamination of Silicide 失效
    SOI肖特基源/排水装置结构，以控制硅化物的侵蚀和分层

    公开(公告)号：US20110227156A1

    公开(公告)日：2011-09-22

    申请号：US12726789

    申请日：2010-03-18

    Applicant: Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    Inventor： Marwan H. Khater ,  Christian Lavoie ,  Bin Yang ,  Zhen Zhang

    IPC: H01L27/12

    CPC classification number: H01L29/78654 ,  H01L29/7839

    Abstract: A Schottky field effect transistor is provided that includes a substrate having a layer of semiconductor material atop a dielectric layer, wherein the layer of semiconductor material has a thickness of less than 10.0 nm. A gate structure is present on the layer of semiconductor material. Raised source and drain regions comprised of a metal semiconductor alloy are present on the layer of semiconductor material on opposing sides of the gate structure. The raised source and drain regions are Schottky source and drain regions. In one embodiment, a first portion of the Schottky source and drain regions that is adjacent to a channel region of the Schottky field effect transistor contacts the dielectric layer, and a non-reacted semiconductor material is present between a second portion of the Schottky source and drain regions and the dielectric layer.

    Abstract translation: 提供一种肖特基场效应晶体管，其包括在电介质层顶上具有半导体材料层的衬底，其中半导体材料层的厚度小于10.0nm。 栅极结构存在于半导体材料层上。 在栅极结构的相对侧的半导体材料层上存在由金属半导体合金构成的凸起的源极和漏极区域。 凸起的源极和漏极区域是肖特基源极和漏极区域。 在一个实施例中，与肖特基场效应晶体管的沟道区相邻的肖特基源极和漏极区的第一部分接触电介质层，并且未反应的半导体材料存在于肖特基源的第二部分和 漏区和电介质层。

    SHREDDER WITH SLOT GUARD
    114.
    发明申请
    SHREDDER WITH SLOT GUARD 审中-公开

    公开(公告)号：US20110210194A1

    公开(公告)日：2011-09-01

    申请号：US12915931

    申请日：2010-10-29

    Applicant: Josh DAVIS ,  Edgar MAURER ,  Jeffrey JENSEN ,  Bo Deng ,  Yin Bin Yang

    Inventor： Josh DAVIS ,  Edgar MAURER ,  Jeffrey JENSEN ,  Bo Deng ,  Yin Bin Yang

    IPC: B02C25/00

    CPC classification number: B02C18/0007 ,  B02C25/00 ,  B02C2018/0023 ,  B02C2018/162 ,  B02C2018/168

    Abstract: A shredder includes a shredder housing with a top head and a shredder mechanism receptacle. The top head has at least a first slot for receiving articles to be shredded. The shredder mechanism receptacle is connected to the top head for receiving a cutting assembly capable of shredding paper. A safety device is disposed in the shredder housing. The safety device includes a slot guard and gear system for selectively blocking the first slot.

    Abstract translation: 切碎机包括具有顶部头部和粉碎机构容器的切碎机壳体。 顶部头部至少具有用于接收待切割物品的第一槽。 切碎机构插座连接到顶部头部，用于接收能够切碎纸的切割组件。 安全装置设置在粉碎机壳体中。 安全装置包括用于选择性地阻挡第一槽的槽护罩和齿轮系统。

    TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RELATED MANUFACTURING METHOD
    117.
    发明申请
    TRANSISTOR DEVICE HAVING ASYMMETRIC EMBEDDED STRAIN ELEMENTS AND RELATED MANUFACTURING METHOD 有权
    具有非对称嵌入式应变元件的晶体管器件及相关制造方法

    公开(公告)号：US20110169073A1

    公开(公告)日：2011-07-14

    申请号：US13052969

    申请日：2011-03-21

    Applicant: Rohit PAL ,  Frank Bin YANG ,  Michael J. HARGROVE

    Inventor： Rohit PAL ,  Frank Bin YANG ,  Michael J. HARGROVE

    IPC: H01L29/78

    CPC classification number: H01L29/66636 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3065 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7848

    Abstract: Semiconductor transistor devices and related fabrication methods are provided. An exemplary transistor device includes a layer of semiconductor material having a channel region defined therein and a gate structure overlying the channel region. Recesses are formed in the layer of semiconductor material adjacent to the channel region, such that the recesses extend asymmetrically toward the channel region. The transistor device also includes stress-inducing semiconductor material formed in the recesses. The asymmetric profile of the stress-inducing semiconductor material enhances carrier mobility in a manner that does not exacerbate the short channel effect.

    Abstract translation: 提供半导体晶体管器件及相关制造方法。 示例性晶体管器件包括其中限定有沟道区的半导体材料层和覆盖沟道区的栅极结构。 凹槽在与沟道区相邻的半导体材料层中形成，使得凹槽朝向沟道区不对称地延伸。 晶体管器件还包括形成在凹槽中的应力诱导半导体材料。 应力诱导半导体材料的不对称轮廓以不会加剧短通道效应的方式提高载流子迁移率。

    NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING
    118.
    发明申请
    NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING 有权
    涉及外延生长的N型掺杂嵌入式的NMOS结构eSiGe：C源/漏极区

    公开(公告)号：US20110133189A1

    公开(公告)日：2011-06-09

    申请号：US12632351

    申请日：2009-12-07

    Applicant: Bin Yang ,  Bo Bai

    Inventor： Bin Yang ,  Bo Bai

    IPC: H01L29/772 ,  H01L21/20

    CPC classification number: H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7833

    Abstract: An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a substrate, and amorphizing the eSiGe:C. The use of eSiGe:C provides a reduction in extension silicon and dopant loss, improved morphology, increased wafer throughput, improved short channel control, and reduced silicide to source/drain contact resistance.

    Abstract translation: 形成具有改进的可制造性的NMOS晶体管。 实施例包括在衬底的源极/漏极区域中形成含有N型掺杂的含硅锗（eSiGe：C），并使eSiGe：C非晶化。 eSiGe：C的使用提供了延长硅和掺杂剂损耗的减少，改进的形态，增加的晶片产量，改进的短沟道控制以及降低的硅化物到源/漏接触电阻。

    EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SILICIDE ENCROACHMENT AND CONTACT RESISTANCE AND ENHANCED CHANNEL MOBILITY
    119.
    发明申请
    EMBEDDED SILICON GERMANIUM SOURCE DRAIN STRUCTURE WITH REDUCED SILICIDE ENCROACHMENT AND CONTACT RESISTANCE AND ENHANCED CHANNEL MOBILITY 有权
    嵌入式硅锗锗排水结构，具有降低的硅胶密封性和接触电阻和增强的通道移动性

    公开(公告)号：US20110062498A1

    公开(公告)日：2011-03-17

    申请号：US12561685

    申请日：2009-09-17

    Applicant: Frank (Bin) Yang ,  Johan W. Weijtmans ,  Scott Luning

    Inventor： Frank (Bin) Yang ,  Johan W. Weijtmans ,  Scott Luning

    IPC: H01L29/772 ,  H01L21/335

    CPC classification number: H01L29/665 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

    Abstract: Semiconductor devices with embedded silicon germanium source/drain regions are formed with enhanced channel mobility, reduced contact resistance, and reduced silicide encroachment. Embodiments include embedded silicon germanium source/drain regions with a first portion having a relatively high germanium concentration, e.g., about 25 to about 35 at. %, an overlying second portion having a first layer with a relatively low germanium concentration, e.g., about 10 to about 20 at. %, and a second layer having a germanium concentration greater than that of the first layer. Embodiments include forming additional layers on the second layer, each odd numbered layer having relatively low germanium concentration, at. % germanium, and each even numbered layer having a relatively high germanium concentration. Embodiments include forming the first region at a thickness of about 400 Å to 28 about 800 Å, and the first and second layers at a thickness of about 30 Å to about 70 Å.

    Abstract translation: 具有嵌入式硅锗源极/漏极区域的半导体器件形成具有增强的沟道迁移率，降低的接触电阻和减少的硅化物侵蚀。 实施例包括具有较高锗浓度的第一部分的嵌入式硅锗源/漏区，例如约25至约35at。 ％，上覆的第二部分具有具有相对低的锗浓度的第一层，例如约10至约20at。 ％，第二层的锗浓度大于第一层的浓度。 实施例包括在第二层上形成附加层，每个奇数层具有较低的锗浓度。 ％锗，并且每个偶数层具有较高的锗浓度。 实施例包括形成厚度为约400至28约800的第一区域，第一和第二层的厚度为约至大约为70埃。

    Lignin blockers and uses thereof
    120.
    发明授权
    Lignin blockers and uses thereof 有权
    木质素阻滞剂及其用途

    公开(公告)号：US07875444B2

    公开(公告)日：2011-01-25

    申请号：US11229817

    申请日：2005-09-19

    Applicant: Bin Yang ,  Charles E. Wyman

    Inventor： Bin Yang ,  Charles E. Wyman

    IPC: C12P7/06 ,  C12P7/08 ,  C12P7/10 ,  C12P19/14 ,  C12P21/06 ,  C07K14/415 ,  C07K14/765

    CPC classification number: C12P7/10 ,  C12P7/08 ,  C12P19/02 ,  Y02E50/16 ,  Y02E50/17

    Abstract: Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion and allows for the determination of optimized pretreatment conditions. Additionally, ethanol yields from a Simultaneous Saccharification and Fermentation process are improved 5-25% by treatment with a lignin-blocking polypeptide and/or protein. Thus, a more efficient and economical method of processing lignin containing biomass materials utilizes a polypeptide/protein treatment step that effectively blocks lignin binding of cellulase.

    Abstract translation: 公开了一种在木质纤维素生物质中转化纤维素的方法。 该方法提供高木质素固体的木质素阻断多肽和/或蛋白质处理。 该处理增强了纤维素转化中的纤维素酶可用性，并且允许确定优化的预处理条件。 此外，通过用木质素阻断多肽和/或蛋白质处理，来自同时糖化和发酵过程的乙醇产率提高了5-25％。 因此，处理含木质素的生物质材料的更有效和经济的方法利用有效阻断木质素结合纤维素酶的多肽/蛋白质处理步骤。

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