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    FLASH MEMORY APPARATUS WITH SERIAL INTERFACE AND RESET METHOD THEREOF
    111.
    发明申请
    FLASH MEMORY APPARATUS WITH SERIAL INTERFACE AND RESET METHOD THEREOF 有权
    具有串行接口的闪存设备及其复位方法

    公开(公告)号：US20120221766A1

    公开(公告)日：2012-08-30

    申请号：US13034683

    申请日：2011-02-24

    Applicant: Jun-Lin Yeh ,  Chi-Cheng Lin

    Inventor： Jun-Lin Yeh ,  Chi-Cheng Lin

    IPC: G06F12/00

    CPC classification number: G06F9/30043 ,  G06F12/00 ,  G06F12/0246 ,  G06F2212/7206 ,  G11C16/20 ,  G11C16/22 ,  G11C2216/30

    Abstract: A flash memory apparatus with serial interface is disclosed. The flash memory apparatus includes a selector, a core circuit and a programmable data bank. The selector decides whether or not to connect one of a write protect pin and a hold pin to a reset signal line. The core circuit receives a reset signal transmitted by the reset signal line and activates a reset operation accordingly. A selecting data is written into the programmable data bank through a programming method and the programmable data bank outputs the selecting data to serve as a selecting signal.

    Abstract translation: 公开了具有串行接口的闪存装置。 闪存装置包括选择器，核心电路和可编程数据组。 选择器决定是否将写保护引脚和保持引脚之一连接到复位信号线。 核心电路接收由复位信号线发送的复位信号，并相应地启动复位操作。 通过编程方法将选择数据写入可编程数据库，并且可编程数据组输出选择数据以用作选择信号。

    Electrolytes for fuel cell electrodes
    112.
    发明授权
    Electrolytes for fuel cell electrodes 有权
    电解质用于增强PEM燃料电池阴极层的氧还原反应（ORR）

    公开(公告)号：US07943675B2

    公开(公告)日：2011-05-17

    申请号：US12049542

    申请日：2008-03-17

    Applicant: John Muldoon ,  Ryszard J. Wycisk ,  Jun Lin ,  Peter N. Pintauro ,  Kohai Hase

    Inventor： John Muldoon ,  Ryszard J. Wycisk ,  Jun Lin ,  Peter N. Pintauro ,  Kohai Hase

    IPC: B01J49/00 ,  B01J39/18 ,  H01M4/60 ,  H01M4/02

    CPC classification number: H01M4/8668 ,  H01M4/8605 ,  H01M2008/1095

    Abstract: Improved polymer-based materials are described, for example for use as an electrode binder in a fuel cell. A fuel cell according to an example of the present invention comprises a first electrode including a catalyst and an electrode binder, a second electrode, and an electrolyte located between the first electrode and the second electrode. The electrolyte may be a proton-exchange membrane (PEM). The electrode binder includes one or more polymers, such as a polyphosphazene.

    Abstract translation: 描述了改进的基于聚合物的材料，例如用作燃料电池中的电极粘合剂。 根据本发明实施例的燃料电池包括包含催化剂和电极粘合剂的第一电极，第二电极和位于第一电极和第二电极之间的电解质。 电解质可以是质子交换膜（PEM）。 电极粘合剂包括一种或多种聚合物，例如聚磷腈。

    STYLUS
    113.
    发明申请
    STYLUS 失效

    公开(公告)号：US20110074741A1

    公开(公告)日：2011-03-31

    申请号：US12825452

    申请日：2010-06-29

    Applicant: SHI-XU LIANG ,  JUN-LIN CHEN ,  CHOON-KIT LEE ,  CHUNG-YEH SA

    Inventor： SHI-XU LIANG ,  JUN-LIN CHEN ,  CHOON-KIT LEE ,  CHUNG-YEH SA

    IPC: G06F3/033

    CPC classification number: G06F3/03545

    Abstract: A stylus is disclosed including a main barrel, a main body receiving the main barrel, a stylus cover covering the main body, and a sliding rod assembled to the main barrel. The main body is slidably assembled to the sliding rod to transfer between being latched inside the main barrel and being exposed out of the main barrel.

    Abstract translation: 公开了一种触针，其包括主筒，容纳主筒的主体，覆盖主体的触控笔盖和组装到主筒的滑杆。 主体可滑动地组装到滑动杆上，以在被锁定在主筒内部并暴露于主筒之外传递。

    Fabrication Process of a Semiconductor Device Having a Capacitor
    114.
    发明申请
    Fabrication Process of a Semiconductor Device Having a Capacitor 有权
    具有电容器的半导体器件的制造工艺

    公开(公告)号：US20090098696A1

    公开(公告)日：2009-04-16

    申请号：US12127067

    申请日：2008-05-27

    Applicant: Jun Lin ,  Hiroyuki Ogawa ,  Hideyuki Kojima

    Inventor： Jun Lin ,  Hiroyuki Ogawa ,  Hideyuki Kojima

    IPC: H01L21/8234

    CPC classification number: H01L27/0629 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/40

    Abstract: A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor.

    Abstract translation: 一种制造半导体器件的方法包括在半导体衬底的电容器器件区域中形成第一沟槽，在第一沟槽的侧壁表面上形成电容器绝缘膜，形成覆盖第一沟槽的半导体膜，电阻器器件区域 的半导体衬底和半导体衬底的逻辑器件区域，在第一沟槽上形成的半导体膜中引入第一杂质元素，对半导体膜进行构图以在电容器器件区域中形成顶电极，电阻器件中的电阻器 区域和逻辑器件区域中的栅电极，退火半导体衬底，并在电阻器中引入第二杂质元素。

    Variable configuration articulated tracked vehicle
    115.
    发明授权
    Variable configuration articulated tracked vehicle 有权

    公开(公告)号：US07493976B2

    公开(公告)日：2009-02-24

    申请号：US11196486

    申请日：2005-08-04

    Applicant: Andrew A. Goldenberg ,  Jun Lin

    Inventor： Andrew A. Goldenberg ,  Jun Lin

    IPC: B62D55/00

    CPC classification number: B62D55/075 ,  B62D55/10 ,  B62D55/12 ,  B62D55/14

    Abstract: A variable configuration articulated tracked vehicle comprises a chassis, a pair of right and left drive pulleys, a right and left planetary wheel, a right and left track, a right and left arm mechanism, and a right and left drive motor. The drive pulleys are rotatably attached to the chassis and each pair of drive pulleys is in the same plane. The planetary wheels are movable relative to the chassis such that each planetary wheel is in the same plane as its respective drive pulleys. The tracks extend around the pair of drive pulleys and the planetary wheel on the respective sides. The arm mechanisms connect the respective planetary wheel to the chassis. Each arm mechanism is rotatably attached to the chassis with a cam. The cam defines a motion path of one end of the arm whereby the motion of the planetary wheel provides a path for the planetary wheel such that the track path defined by the respective drive pulleys and the planetary wheel is a constant track length. The motors are each operably connected to the respective pair of drive pulleys for driving the track.

    Method for fabricating a thermal bubble inkjet print head with rapid ink refill mechanism and off-shooter heater
    117.
    发明授权
    Method for fabricating a thermal bubble inkjet print head with rapid ink refill mechanism and off-shooter heater 有权
    用快速墨水补充机构和离枪加热器制造热气泡喷墨打印头的方法

    公开(公告)号：US07252776B2

    公开(公告)日：2007-08-07

    申请号：US11315567

    申请日：2005-12-22

    Applicant: Chung-Chu Chen ,  Chen-Kuei Chung ,  Chun-Jun Lin

    Inventor： Chung-Chu Chen ,  Chen-Kuei Chung ,  Chun-Jun Lin

    IPC: B41J2/16

    CPC classification number: B41J2/1642 ,  B41J2/14129 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1625 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1643 ,  B41J2/1645 ,  Y10T29/49401

    Abstract: A method for fabricating a thermal inkjet head equipped with symmetrical heaters and a rapid ink refill mechanism and the head fabricated by the method are provided. The method incorporates two thick photoresist deposition processes and a nickel electroplating process. The first thick photoresist deposition process is carried out to form a primary ink chamber and an auxiliary ink chamber in fluid communication with a funnel-shaped manifold and an injector orifice. The second thick photoresist deposition process forms a mold for forming an injector passageway that leads to the injector orifice. The nickel electroplating process provides an orifice plate on top of the inkjet head through which an injector passageway that leads to the injector orifice is provided for injecting ink droplets.

    Abstract translation: 提供了一种制造装备有对称加热器和快速墨水补充机构的热喷墨头的方法以及通过该方法制造的头部。 该方法包括两个厚的光致抗蚀剂沉积工艺和镍电镀工艺。 进行第一厚的光致抗蚀剂沉积工艺以形成与漏斗形歧管和喷射器孔口流体连通的初级墨水室和辅助墨水室。 第二厚的光致抗蚀剂沉积工艺形成用于形成通向喷射孔的喷射器通道的模具。 镍电镀工艺在喷墨头的顶部提供孔板，通过该孔板提供通向喷射器孔口的喷射器通道用于喷射墨滴。

    Distributed data server and an operating method thereof
    118.
    发明申请
    Distributed data server and an operating method thereof 审中-公开
    分布式数据服务器及其操作方法

    公开(公告)号：US20070168697A1

    公开(公告)日：2007-07-19

    申请号：US11600025

    申请日：2006-11-16

    Applicant: Yeh-Liang Hsu ,  Chang-Huei Wu ,  Chih-Ming Cheng ,  Hong-Xiang Ma ,  Jun-Lin Lin

    Inventor： Yeh-Liang Hsu ,  Chang-Huei Wu ,  Chih-Ming Cheng ,  Hong-Xiang Ma ,  Jun-Lin Lin

    IPC: G06F17/30 ,  G06F11/00

    CPC classification number: G06F16/27

    Abstract: A distributed data server is a portable data server that is built by incorporating it with an embedded system. The distributed data server can receive outside data through an input unit, process the outside data via a control unit and then store the processed data to a storage unit. The server provides a network unit for the outside world to inquire about the processed data via the Internet. The server further offers a display unit to show a data message that is outputted from the control unit. In addition, the control unit can determine whether a plurality of states of data being written onto the storage unit are abnormal and, if so, output an abnormal signal as a warning. Hence, the distributed data server can reduce the huge systematic structure of the known distributed data server and construct any type of monitoring system flexibly.

    Abstract translation: 分布式数据服务器是通过将其与嵌入式系统相结合而构建的便携式数据服务器。 分布式数据服务器可以通过输入单元接收外部数据，经由控制单元处理外部数据，然后将处理后的数据存储到存储单元。 服务器为外界提供一个网络单元，通过互联网查询已处理的数据。 服务器还提供显示单元以显示从控制单元输出的数据消息。 此外，控制单元可以确定写入存储单元的多个数据状态是否异常，如果是，则输出异常信号作为警告。 因此，分布式数据服务器可以减少已知分布式数据服务器的庞大系统结构，灵活构建任何类型的监控系统。

    Device and method for compensating defect in semiconductor memory
    119.
    发明授权
    Device and method for compensating defect in semiconductor memory 有权
    半导体存储器补偿缺陷的装置和方法

    公开(公告)号：US07203107B2

    公开(公告)日：2007-04-10

    申请号：US11306381

    申请日：2005-12-27

    Applicant: Jun-Lin Yeh

    Inventor： Jun-Lin Yeh

    IPC: G11C29/00 ,  G11C7/00

    CPC classification number: G11C29/883 ,  G11C29/88

    Abstract: A device for compensating a semiconductor memory defect, suitable for use in a semiconductor memory, is provided. The device includes a memory array, having at least a defectless sub-memory region, the memory array being coupled to an address decoder circuit and a sensing circuit for storing data. A selection circuit is coupled to a control unit and outputs a selection signal to the control unit. A first input address buffer is coupled to the control unit and the address decoder circuit, and outputs an address signal to the address decoder circuit in response to the selection signal for selecting the defectless sub-memory region to store data. A method for compensating a semiconductor memory defect is also provided, including determining whether the memory region of the semiconductor memory has a defect; and replacing the memory region with the defectless sub-memory region to store data when the semiconductor memory is defective.

    Abstract translation: 提供一种适用于半导体存储器的用于补偿半导体存储器缺陷的装置。 该装置包括具有至少一个无缺陷的子存储器区域的存储器阵列，该存储器阵列耦合到地址解码器电路和用于存储数据的感测电路。 选择电路耦合到控制单元并将选择信号输出到控制单元。 第一输入地址缓冲器耦合到控制单元和地址解码器电路，并且响应于用于选择无缺陷子存储器区域以存储数据的选择信号而将地址信号输出到地址解码器电路。 还提供了一种用于补偿半导体存储器缺陷的方法，包括确定半导体存储器的存储区是否具有缺陷; 以及当半导体存储器有缺陷时用无缺陷子存储器区域替换存储区域以存储数据。

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