公开(公告)号：US06677213B1

公开(公告)日：2004-01-13

申请号：US10094108

申请日：2002-03-08

申请人： Krishnaswamy Ramkumar ,  Frederick B. Jenne

发明人： Krishnaswamy Ramkumar ,  Frederick B. Jenne

IPC分类号： H01L21336

CPC分类号： H01L21/28176 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28282 ,  H01L21/3003 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

摘要： A method for processing a semiconductor topography is provided, which includes diffusing deuterium across one or more interfaces of a silicon-oxide-nitride-oxide-silicon (SONOS) structure. In particular, the method may include diffusing deuterium across one or more interfaces of a SONOS structure during a reflow of a dielectric layer spaced above the SONOS structure. In some embodiments, the method may include forming a deutereated nitride layer above the SONOS structure prior to the reflow process. In addition or alternatively, the method may include forming a deutereated nitride layer within the SONOS structure prior to the reflow process. In some cases, the method may further include annealing the SONOS structure with a deutereated substance prior to forming the deutereated nitride layer. In either embodiment, a SONOS structure may be formed which includes deuterium arranged within an interface of a silicon layer and an oxide layer of the structure.

摘要翻译： 提供了一种用于处理半导体形貌的方法，其包括在氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）结构的一个或多个界面上扩散氘。 特别地，该方法可以包括在SONOS结构之间隔开的电介质层的回流期间扩散氘穿过SONOS结构的一个或多个界面。 在一些实施方案中，该方法可以包括在回流工艺之前在SONOS结构之上形成去氢化氮化物层。 另外或替代地，该方法可以包括在回流工艺之前在SONOS结构内形成一个去氢化氮化物层。 在一些情况下，该方法可以进一步包括在形成去氢化氮化物层之前用缺失的物质退火SONOS结构。 在任一实施例中，可以形成SONOS结构，其包括排列在硅层和该结构的氧化物层的界面内的氘。

公开(公告)号：US06534378B1

公开(公告)日：2003-03-18

申请号：US09143899

申请日：1998-08-31

申请人： Krishnaswamy Ramkumar ,  Chidambaram G. Kallingal ,  Sriram Madhavan

发明人： Krishnaswamy Ramkumar ,  Chidambaram G. Kallingal ,  Sriram Madhavan

IPC分类号： H01L2358

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： The present invention advantageously provides a method for retaining a substantially transparent dielectric above alignment marks during polishing of the dielectric to ensure that the alignment marks are preserved for subsequent processing steps. According to an embodiment, alignment marks are etched into a semiconductor substrate. Thereafter, a pad oxide layer is deposited across the substrate surface, followed by the deposition of a first nitride layer. Isolation trenches which are deeper than the alignment mark trenches are formed spaced distances apart within the substrate. Optical lithography may be used to define the regions of the first nitride layer, the pad oxide layer, and the substrate to be etched. The isolation trenches thus become the only areas of the substrate not covered by the pad oxide layer and the first nitride layer. A substantially transparent dielectric, e.g., oxide, is then deposited across the semiconductor topography to a level spaced above the first nitride layer. In this manner, both the isolation trenches and the alignment mark trenches are filled. The dielectric is then subjected to a polish that removes the dielectric above the isolation trenches to the nitride layer and the dielectric above the alignment mark trenches to a level above the nitride layer. A slurryless fixed abrasive polishing technique may be used to planarize the dielectric. A polysilicon/nitride stack which is deposited across the topography may be patterned using lithography. Light is reflected from the alignment marks to detect their positions so that a reticle can be aligned to the polysilicon/nitride stack during the lithography process.

摘要翻译： 本发明有利地提供了一种用于在抛光电介质期间将基本透明的电介质保持在对准标记之上以确保对准标记被保留用于后续处理步骤的方法。 根据实施例，对准标记被蚀刻到半导体衬底中。 此后，在衬底表面上沉积焊盘氧化物层，随后沉积第一氮化物层。 比对准标记沟槽更深的绝缘沟槽在衬底内分开形成间隔开的距离。 光学光刻可用于限定第一氮化物层，衬垫氧化物层和待蚀刻衬底的区域。 因此，隔离沟槽成为衬底氧化层和第一氮化物层未覆盖的衬底的唯一区域。 然后将基本上透明的电介质（例如氧化物）横跨半导体形貌沉积到在第一氮化物层之上间隔开的水平面上。 以这种方式，填充隔离沟槽和对准标记沟槽。 然后对电介质进行抛光，其将隔离沟槽上方的电介质移除到氮化物层和对准标记沟槽上方的电介质至氮化物层上方的电平。 可以使用无淤泥固定的研磨抛光技术来平坦化电介质。 可以使用光刻法来图案化跨越形貌的多晶硅/氮化物堆叠。 光从对准标记反射以检测它们的位置，使得在光刻过程中掩模版可以与多晶硅/氮化物堆叠对准。

公开(公告)号：US06436848B1

公开(公告)日：2002-08-20

申请号：US09281672

申请日：1999-03-30

申请人： Krishnaswamy Ramkumar

发明人： Krishnaswamy Ramkumar

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  C23C8/34 ,  H01L21/3144 ,  H01L29/518

摘要： A nitrogen-rich silicon oxide layer is formed using an apparatus for oxidizing semiconductor substrates having a process zone or chamber fluidically coupled to a torch zone or chamber. Generally, a thin initial silicon oxide layer is formed on the substrate using common wet or dry oxidizing processing conditions. Subsequently, a nitridizing atmosphere is introduced to the semiconductor substrates causing a nitrogen-rich silicon oxide layer to be formed thereon. The nitridizing atmosphere is advantageously generated by an exothermic reaction within the torch zone. Once formed, the nitridizing atmosphere is directed to the process zone through the fluidic coupling. The advantageous exothermic reaction resulting from the introduction of nitrous oxide (N2O) to the torch zone at a temperature sufficiently high to induce such an exothermic reaction, generally between approximately 850 to 950 degrees Celsius. Semiconductor integrated circuits are formed using nitrogen-rich silicon oxide films of the current method.

摘要翻译： 使用用于氧化半导体衬底的装置形成富氮氧化硅层，所述设备具有流体耦合到焊炬区或室的工艺区或腔室。 通常，使用常规的湿式或干式氧化处理条件在基板上形成薄的初始氧化硅层。 随后，将氮化气氛引入到半导体衬底中，从而在其上形成富氮氧化硅层。 氮化气氛有利地由焊炬区内的放热反应产生。 一旦形成，氮化气氛通过流体耦合导向工艺区。 通过在足够高的温度下将一氧化二氮（N 2 O）引入焊炬区而产生的有利的放热反应，引起这种放热反应，通常在约850至950摄氏度之间。 使用当前方法的富氮氧化硅膜形成半导体集成电路。

公开(公告)号：US06171180B2

公开(公告)日：2001-01-09

申请号：US09052219

申请日：1998-03-31

申请人： William W. C. Koutny, Jr. ,  Chidambaram G. Kallingal ,  Krishnaswamy Ramkumar

发明人： William W. C. Koutny, Jr. ,  Chidambaram G. Kallingal ,  Krishnaswamy Ramkumar

IPC分类号： B24B2900

CPC分类号： H01L21/31053 ,  H01L21/76224

摘要： The present invention advantageously provides a method for using an abrasive surface and a particle-free liquid to polish a dielectric, wherein the dielectric is deposited within an isolation trench and across a polish stop surface such that a recess region of the dielectric is spaced below the polish stop surface. In an embodiment, the dielectric is an isolation oxide, and the polish stop surface belongs to an upper surface of a nitride layer formed above a silicon-based substrate. The surface of the dielectric is positioned laterally adjacent the abrasive polishing surface such that the particle-free liquid is positioned at the interface between the dielectric and the polishing surface. The particle-free liquid is preferably deionized water, and the abrasive polishing surface is preferably a polymeric matrix entrained with particles composed of, e.g., ceria. A force configured perpendicular to the backside of the substrate is applied to the polishing surface to force the dielectric surface against the polishing surface while the polishing surface is being rotated relative to the dielectric. As a result, elevationally raised regions of the dielectric are polished to the recessed region of the dielectric, planarizing the dielectric surface. The polish rate of the dielectric is substantially greater than that of the polish stop surface, and thus the polishing stop layer remains intact above the substrate. The polish rate of the elevationally raised regions of the dielectric is also greater than that of the recess region of the dielectric.

摘要翻译： 本发明有利地提供了一种使用研磨表面和无颗粒的液体来抛光电介质的方法，其中电介质沉积在隔离沟槽内并穿过抛光止动表面，使得电介质的凹陷区域间隔开 抛光停止表面。 在一个实施例中，电介质是隔离氧化物，并且抛光停止表面属于在硅基衬底上形成的氮化物层的上表面。 电介质的表面位于研磨抛光表面的横向附近，使得无颗粒的液体位于电介质和抛光表面之间的界面处。 无颗粒液体优选为去离子水，研磨抛光表面优选为与例如二氧化铈组成的颗粒夹带的聚合物基质。 垂直于衬底背面的力被施加到抛光表面，以在抛光表面相对于电介质旋转时迫使电介质表面抵靠抛光表面。 结果，电介质的垂直升高的区域被抛光到电介质的凹陷区域，使电介质表面平坦化。 电介质的抛光速率基本上大于抛光止动表面的抛光速率，因此抛光停止层在基材上方保持完整。 电介质的高度升高区域的抛光速率也大于电介质凹槽区域的抛光速率。

公开(公告)号：US5830804A

公开(公告)日：1998-11-03

申请号：US673304

申请日：1996-06-28

申请人： James M. Cleeves ,  Krishnaswamy Ramkumar

发明人： James M. Cleeves ,  Krishnaswamy Ramkumar

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76802 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76834

摘要： A method of encapsulating a dielectric. According to the method of the present invention, a disposable post is formed over a portion of a substrate. Next, a first dielectric layer is formed over the substrate and the disposable post. A second dielectric layer is then formed over the first dielectric layer. Next, a third dielectric layer is formed over the second dielectric layer. A portion of the third dielectric layer is then removed so as to reveal the disposable post. The disposable post is then removed to form an opening.

摘要翻译： 一种封装电介质的方法。 根据本发明的方法，在衬底的一部分上形成一次性柱。 接下来，在基板和一次性柱上形成第一介电层。 然后在第一介电层上形成第二电介质层。 接下来，在第二电介质层上形成第三电介质层。 然后去除第三介电层的一部分以露出一次性柱。 然后移除一次性柱以形成开口。