公开(公告)号：US11769684B2

公开(公告)日：2023-09-26

申请号：US18080421

申请日：2022-12-13

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Vijay D. Parkhe ,  Naveen Kumar Nagaraja ,  Sanjeev Baluja ,  Surajit Kumar ,  Dhritiman Subha Kashyap ,  Ashutosh Agarwal

IPC: H01T23/00 ,  H01L21/683 ,  H01L21/67 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/6833 ,  C23C16/4585 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/67248 ,  C23C16/45544

Abstract: Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

公开(公告)号：US20230113057A1

公开(公告)日：2023-04-13

申请号：US18080421

申请日：2022-12-13

Applicant: Applied Materials, Inc.

Inventor： Tejas Ulavi ,  Vijay D. Parkhe ,  Naveen Kumar Nagaraja ,  Sanjeev Baluja ,  Surajit Kumar ,  Dhritiman Subha Kashyap ,  Ashutosh Agarwal

IPC: H01L21/683 ,  H01L21/67 ,  C23C16/458

Abstract: Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

公开(公告)号：US20230071431A1

公开(公告)日：2023-03-09

申请号：US17467020

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Arkaprava Dan ,  Sanjeev Baluja

IPC: G05B13/02 ,  H01L21/67

Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.

公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

公开(公告)号：US11549183B2

公开(公告)日：2023-01-10

申请号：US16876252

申请日：2020-05-18

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Kartik Shah ,  Yanjun Xia

IPC: C23C16/455 ,  H01J37/32

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

公开(公告)号：US11520358B2

公开(公告)日：2022-12-06

申请号：US17521469

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Ashley M. Okada ,  Alexander Fernandez ,  Ming Xu ,  Marcel E. Josephson ,  Sushant Suresh Koshti ,  Kenneth Le ,  Kevin M. Brashear

IPC: G05D7/06 ,  G01F25/00 ,  G01F25/17

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：US11512391B2

公开(公告)日：2022-11-29

申请号：US16912417

申请日：2020-06-25

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US11501957B2

公开(公告)日：2022-11-15

申请号：US17011977

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Gopu Krishna ,  Alexander S. Polyak ,  Sanjeev Baluja

IPC: H01J37/32

Abstract: Process chambers and methods for calibrating components of a processing chamber while the chamber volume is under vacuum are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A support plate is positioned under the chamber floor to accommodate for deflection of the chamber floor due to vacuum conditions within the chamber volume. A bellows assembly extending from the chamber floor to the support plate maintains vacuum conditions within the chamber.

公开(公告)号：US20220327262A1

公开(公告)日：2022-10-13

申请号：US17224545

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Dhritiman Subha Kashyap ,  Chaowei Wang ,  Kartik Shah ,  Kevin Griffin ,  Karthik Ramanathan ,  Hanhong Chen ,  Joseph AuBuchon ,  Sanjeev Baluja

IPC: G06F30/27 ,  G06F30/10

Abstract: Methods, software systems and processes to develop surrogate model-based optimizers for controlling and optimizing flow and pressure of purges between a showerhead and a heater having a substrate support to control non-uniformity inherent in a processing chamber due to geometric configuration and process regimes. The flow optimizer process utilizes experimental data from optimal process space coverage models, generated simulation data and statistical machine learning tools (i.e. regression models and global optimizers) to predict optimal flow rates for any user-specified process regime.

公开(公告)号：US20220316061A1

公开(公告)日：2022-10-06

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).