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公开(公告)号：US20160254142A1
公开(公告)日：2016-09-01
申请号：US14632793
申请日：2015-02-26
Inventor： Ching-Yu Chang , Chien-Wei Wang , Hsueh-An Chen
IPC: H01L21/027 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/308
CPC classification number: G03F7/11 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/004 , G03F7/0046 , G03F7/0758 , G03F7/168 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/0274 , H01L21/3081
Abstract: An improved resist material and a technique for patterning a workpiece such as an integrated circuit workpiece that offers improved resistance to environmental contaminants is provided. In an exemplary embodiment, the method includes receiving a workpiece and applying to the workpiece a resist material containing a protectant disbursed throughout. A thermal process is performed on the workpiece that causes the protectant to become concentrated in an upper region of the resist material. The resist material is exposed in a lithographic process and the exposed resist material is developed to define a pattern within the resist material. In some such examples, the protectant is selected to reduce an effect of an environmental contaminant without affecting an acid/base ratio of the resist material. In some such embodiments, the protectant includes a hydrophobic functional group.
Abstract translation: 提供改进的抗蚀剂材料和用于图案化诸如集成电路工件的工件的技术，其提供改善的对环境污染物的抵抗性。 在示例性实施例中，该方法包括接收工件并向工件施加含有保护剂的抗蚀剂材料，该抗蚀剂材料贯穿于该材料。 对工件进行热处理，使得保护剂变得集中在抗蚀剂材料的上部区域中。 抗蚀剂材料在光刻工艺中暴露，并且曝光的抗蚀剂材料被显影以在抗蚀剂材料内限定图案。 在一些这样的实例中，保护剂被选择以减少环境污染物的影响而不影响抗蚀剂材料的酸/碱比。 在一些这样的实施方案中，保护剂包括疏水官能团。
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公开(公告)号：US09146469B2
公开(公告)日：2015-09-29
申请号：US14014185
申请日：2013-08-29
Inventor： Chen-Yu Liu , Ching-Yu Chang
CPC classification number: G03F7/092 , G03F7/0045 , G03F7/095 , G03F7/11 , G03F7/20
Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a middle layer (ML) of a patterning stack (e.g., a tri-layer patterning stack such as a tri-layer resist) and forming a photoresist layer directly on the middle layer. The middle layer includes an additive component having a photo base generator (PBG). The substrate including the photoresist layer and the middle layer is then exposed to a radiation. A covalent bond between the ML and the photoresist layer may be formed.
Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括形成图案化叠层的中间层（ML）（例如三层图案化叠层，例如三层抗蚀剂），并直接在中间层上形成光致抗蚀剂层。 中间层包括具有光源产生器（PBG）的添加剂组分。 然后将包括光致抗蚀剂层和中间层的基板暴露于辐射。 可以形成ML和光致抗蚀剂层之间的共价键。
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公开(公告)号：US20150157987A1
公开(公告)日：2015-06-11
申请号：US14338883
申请日：2014-07-23
Inventor： Kuan-Hsin Lo , Ching-Yu Chang
CPC classification number: B01D67/0093 , B01D65/003 , B01D69/02 , B01D2313/04 , B01D2323/30 , B01D2323/34 , G03F7/16
Abstract: In accordance with an embodiment, a filter membrane is sealed with a sealing material prior to using the filter membrane to filter process fluids. The sealing material is a fluorine-based polymer or a polymer with a cross-linking group. Once the sealing material has been placed in contact with the filter membrane, a cross-linking reaction may be initiated using either physical or chemical processes to cross-link the sealing material and to seal the filter membrane within the sealing material, thereby separating the filter membrane from the process fluids, reducing or eliminating leaching of the filter membrane into the process fluid.
Abstract translation: 根据一个实施例，在使用过滤膜过滤工艺流体之前，用密封材料密封过滤膜。 密封材料是氟基聚合物或具有交联基团的聚合物。 一旦密封材料已经被放置成与过滤膜接触，则可以使用物理或化学过程来开始交联反应以交联密封材料并将过滤膜密封在密封材料内，从而分离过滤器 来自过程流体的膜，减少或消除过滤膜浸入过程流体中。
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公开(公告)号：US20150111384A1
公开(公告)日：2015-04-23
申请号：US14490517
申请日：2014-09-18
Inventor： Ching-Yu Chang , Chen-Yu Liu
IPC: H01L21/02 , H01L21/311
CPC classification number: H01L21/0206 , C08F220/18 , C08F220/22 , C11D11/0047 , G03F7/11 , G03F7/40 , G03F7/425 , H01L21/0212 , H01L21/02343 , H01L21/02359 , H01L21/0276 , H01L21/31111 , H01L21/31133 , H01L29/66795
Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.
Abstract translation: 提供了一种用于抗反射层的系统和方法。 在一个实施例中，抗反射层包括浮动部件，以在抗反射层分散之后沿着抗反射层的顶表面形成浮动区域。 漂浮的组分可以是漂浮的交联剂，漂浮的聚合物树脂或漂浮的催化剂。 浮动交联剂，漂浮聚合物树脂或浮动催化剂可以包含氟原子。 使用流体除去抗反射层。
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公开(公告)号：US20140273521A1
公开(公告)日：2014-09-18
申请号：US13829301
申请日：2013-03-14
Inventor： Chen-Hau Wu , Ching-Yu Chang
IPC: H01L21/027 , G03F7/038
CPC classification number: G03F7/038 , G03F7/0382 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
Abstract: A system and method for photoresists is provided. In an embodiment a cross-linking or coupling reagent is included within a photoresist composition. The cross-linking or coupling reagent will react with the polymer resin within the photoresist composition to cross-link or couple the polymers together, resulting in a polymer with a larger molecular weight. This larger molecular weight will cause the dissolution rate of the photoresist to decrease, leading to a better depth of focus for the line.
Abstract translation: 提供了一种用于光致抗蚀剂的系统和方法。 在一个实施方案中，交联或偶联试剂包括在光致抗蚀剂组合物内。 交联或偶联试剂将与光致抗蚀剂组合物内的聚合物树脂反应，将聚合物交联或连接在一起，产生分子量较大的聚合物。 这种较大的分子量将导致光致抗蚀剂的溶解速率降低，导致该线更好的聚焦深度。
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Patent Agency Ranking
公开(公告)号：US20140255851A1
公开(公告)日：2014-09-11
申请号：US13790057
申请日：2013-03-08
Inventor： Wen-Yun Wang , Ching-Yu Chang
IPC: G03F7/40
Abstract: A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process.
Abstract translation: 提供了减少光致抗蚀剂加工缺陷的系统和方法。 一个实施例包括使用碱性环境清洗显影后的光致抗蚀剂。 碱性环境可以包含中性溶剂和碱性显影剂。 碱性环境将改变从显影产生的残留物与光致抗蚀剂的表面之间的吸引力，使得表面彼此排斥，使残留物更容易除去。 通过去除更多的残留物，光刻工艺中的缺陷将会更少。
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公开(公告)号：US12222647B2
公开(公告)日：2025-02-11
申请号：US17873130
申请日：2022-07-25
Inventor： Chun-Chih Ho , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.
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公开(公告)号：US12222643B2
公开(公告)日：2025-02-11
申请号：US17971552
申请日：2022-10-22
Inventor： Chih-Cheng Liu , Ming-Hui Weng , Jr-Hung Li , Yahru Cheng , Chi-Ming Yang , Tze-Liang Lee , Ching-Yu Chang
IPC: G03F7/004 , C23C16/455 , C23C16/56 , G03F7/16 , G03F7/20 , G03F7/38 , H01L21/027
Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1≤a≤2, b≥1, c≥1, and b+c≤4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
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公开(公告)号：US12189287B2
公开(公告)日：2025-01-07
申请号：US18208794
申请日：2023-06-12
Inventor： Li-Po Yang , Wei-Han Lai , Ching-Yu Chang
IPC: G03F7/004 , C08F212/14 , C08F220/38 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/36 , G03F7/38
Abstract: Method of forming pattern in photoresist layer includes forming photoresist layer over substrate, selectively exposing photoresist layer to actinic radiation forming latent pattern. Latent pattern is developed by applying developer to form pattern. Photoresist layer includes photoresist composition including polymer: A1, A2, L are direct bond, C4-C30 aromatic, C4-C30 alkyl, C4-C30 cycloalkyl, C4-C30 hydroxylalkyl, C4-C30 alkoxy, C4-C30 alkoxyl alkyl, C4-C30 acetyl, C4-C30 acetylalkyl, C4-C30 alkyl carboxyl, C4-C30 cycloalkyl carboxyl, C4-C30 hydrocarbon ring, C4-C30 heterocyclic, —COO—, A1 and A2 are not both direct bonds, and are unsubstituted or substituted with a halogen, carbonyl, or hydroxyl; A3 is C6-C14 aromatic, wherein A3 is unsubstituted or substituted with halogen, carbonyl, or hydroxyl; R1 is acid labile group; Ra, Rb are H or C1-C3 alkyl; Rf is direct bond or C1-C5 fluorocarbon; PAG is photoacid generator; 0
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公开(公告)号：US12087616B2
公开(公告)日：2024-09-10
申请号：US17720789
申请日：2022-04-14
Inventor： Chun-Chih Ho , Yu-Chung Su , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/762 , H01L21/768
CPC classification number: H01L21/76289 , H01L21/76813
Abstract: A method of forming a semiconductor device includes forming a plurality of non-insulator structures on a substrate, the plurality of non-insulator structures being spaced apart by trenches, forming a sacrificial layer overfilling the trenches, reflowing the sacrificial layer at an elevated temperature, wherein a top surface of the sacrificial layer after the reflowing is lower than a top surface of the sacrificial layer before the reflowing, etching back the sacrificial layer to lower the top surface of the sacrificial layer to fall below top surfaces of the plurality of non-insulator structures, forming a dielectric layer on the sacrificial layer, and removing the sacrificial layer to form air gaps below the dielectric layer.
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