Reprogramming non-volatile memory devices for read disturbance mitigation
    111.
    发明授权
    Reprogramming non-volatile memory devices for read disturbance mitigation 有权
    重新编程非易失性存储器件用于读取干扰减轻

    公开(公告)号:US08264880B1

    公开(公告)日:2012-09-11

    申请号:US13249080

    申请日:2011-09-29

    申请人: Xueshi Yang

    发明人: Xueshi Yang

    IPC分类号: G11C11/34

    CPC分类号: G11C16/06 G11C16/3418

    摘要: The present disclosure includes systems and techniques relating to non-volatile memory. A described device includes a non-volatile memory structure including a first data area, and a second data area that stores information. The information can include a first value corresponding to the first data area, the first value being set responsive to a last programming cycle on the first data area, and a second value indicating a total number of programming or erasing operations on the first data area.

    摘要翻译: 本公开包括与非易失性存储器有关的系统和技术。 所描述的设备包括包括第一数据区和存储信息的第二数据区的非易失性存储器结构。 信息可以包括对应于第一数据区的第一值,响应于第一数据区上的最后编程周期而设置的第一值,以及指示对第一数据区的编程或擦除操作的总数的第二值。

    RELIABILITY METRICS MANAGEMENT FOR SOFT DECODING
    112.
    发明申请
    RELIABILITY METRICS MANAGEMENT FOR SOFT DECODING 失效
    软解码的可靠性量度管理

    公开(公告)号:US20120213001A1

    公开(公告)日:2012-08-23

    申请号:US13397434

    申请日:2012-02-15

    申请人: Xueshi Yang

    发明人: Xueshi Yang

    IPC分类号: G11C16/06

    摘要: Embodiments provide a method for reading a target memory sector of a memory. The method comprises, based on read data corresponding to a plurality of memory sectors of the memory, estimating first one or more reference voltages and, using the first one or more reference voltages, performing a first read operation on the target memory sector. The method further comprises determining an error correcting code (ECC) decoding failure of the first read operation and, in response to determining the ECC decoding failure of the first read operation and based on read data corresponding to the target memory sector, updating the estimate of the first one or more reference voltages to generate second one or more reference voltages. The method also comprises using the second one or more reference voltages, performing a second read operation on the target memory sector.

    摘要翻译: 实施例提供了一种用于读取存储器的目标存储器扇区的方法。 该方法包括:基于对应于存储器的多个存储器扇区的读取数据,估计第一个一个或多个参考电压,并且使用第一个一个或多个参考电压对目标存储器扇区执行第一读取操作。 该方法还包括确定第一读取操作的纠错码(ECC)解码失败,并且响应于确定第一读取操作的ECC解码失败并且基于对应于目标存储器扇区的读取数据,更新估计 第一个或多个参考电压以产生第二个一个或多个参考电压。 该方法还包括使用第二个一个或多个参考电压,对目标存储器扇区执行第二读取操作。

    Systems and methods for data page management of NAND flash memory arrangements
    113.
    发明授权
    Systems and methods for data page management of NAND flash memory arrangements 有权
    NAND闪存安排的数据页面管理系统和方法

    公开(公告)号:US08223545B1

    公开(公告)日:2012-07-17

    申请号:US12611837

    申请日:2009-11-03

    IPC分类号: G11C11/34

    CPC分类号: G11C11/5621 G11C2211/5641

    摘要: Embodiments of the present disclosure provide methods and apparatus for providing a NAND flash memory arrangement that comprises a source select line (SSL), a drain select line (DSL) and a plurality of NAND memory cells arranged to provide a plurality of data pages. The method further includes defining a first set of data pages in close proximity to the SSL, defining a second set of data pages in close proximity to the DSL, and differentiating the first set of data pages and the second set of data pages from at least the remaining data pages.

    摘要翻译: 本公开的实施例提供了用于提供NAND闪速存储器装置的方法和装置,其包括源选择线(SSL),漏极选择线(DSL)以及布置成提供多个数据页的多个NAND存储器单元。 该方法还包括定义靠近SSL的第一组数据页面,定义靠近DSL的第二组数据页面,并且至少将第一组数据页面和第二组数据页面区分开 剩余的数据页。

    Flash memory read performance
    114.
    发明授权
    Flash memory read performance 有权
    闪存读取性能

    公开(公告)号:US08213228B1

    公开(公告)日:2012-07-03

    申请号:US12610106

    申请日:2009-10-30

    申请人: Xueshi Yang

    发明人: Xueshi Yang

    IPC分类号: G11C11/34 G11C16/04 G11C16/06

    摘要: This disclosure describes techniques for reducing the number of data transmissions required to read an amount of data from multi-level-cell (MLC) flash memory. These techniques effectively increase the speed at which MLC flash memory can be read. This disclosure also describes techniques for determining whether or not a flash-memory cell has a high probability of an error by determining whether a voltage threshold is in close proximity to a reference voltage.

    摘要翻译: 本公开描述了用于减少从多电平单元(MLC)闪速存储器读取数据量所需的数据传输的数量的技术。 这些技术有效地提高了可以读取MLC闪存的速度。 本公开还描述了通过确定电压阈值是否接近参考电压来确定闪存单元是否具有高错误概率的技术。

    SYSTEMS AND METHODS FOR PERFORMING EFFICIENT DECODING USING A HYBRID DECODER
    115.
    发明申请
    SYSTEMS AND METHODS FOR PERFORMING EFFICIENT DECODING USING A HYBRID DECODER 有权
    使用混合解码器执行有效解码的系统和方法

    公开(公告)号:US20120119928A1

    公开(公告)日:2012-05-17

    申请号:US13290672

    申请日:2011-11-07

    申请人: Xueshi Yang

    发明人: Xueshi Yang

    IPC分类号: H03M13/00 H03M7/00

    摘要: Systems and methods for decoding data using a hybrid decoder are provided. A data signal that includes a codeword is received. A signal quality indicator for the data signal is computed. One of a plurality of decoders is selected based on the computed signal quality indicator. Each of the plurality of decoders is configured to decode information based on a different decoding technique. The codeword included in the data signal is decoded using the selected one of the plurality of decoders.

    摘要翻译: 提供了使用混合解码器解码数据的系统和方法。 接收包括码字的数据信号。 计算数据信号的信号质量指示符。 基于计算出的信号质量指示符来选择多个解码器中的一个。 多个解码器中的每一个被配置为基于不同的解码技术来解码信息。 使用多个解码器中选择的解码器对包含在数据信号中的码字进行解码。

    Detecting insertion/deletion using LDPC code
    116.
    发明授权
    Detecting insertion/deletion using LDPC code 有权
    使用LDPC码检测插入/删除

    公开(公告)号:US08181084B1

    公开(公告)日:2012-05-15

    申请号:US12540995

    申请日:2009-08-13

    IPC分类号: G06F11/00

    摘要: Systems and methods are provided that use LDPC codes to determine the locations of insertions or deletions within bit-strings of information transmitted through communication channels and which notify a LDPC decoder of the locations of the insertions or deletions prior to the start of the decoding process. The use of such systems and methods, according to this disclosure, may improve LDPC decoder performance by reducing errors cause by insertions and/or deletions. The use of such systems and methods, according to this disclosure, may also provide improved application performance and larger data transmission rates.

    摘要翻译: 提供了使用LDPC码来确定在通过通信信道发送的信息的位串内的插入或删除的位置并且在解码过程开始之前通知LDPC解码器插入或删除的位置的系统和方法。 根据本公开,使用这样的系统和方法可以通过减少由插入和/或删除引起的错误来改善LDPC解码器性能。 根据本公开的这样的系统和方法的使用也可以提供改进的应用性能和更大的数据传输速率。

    METHODS AND SYSTEMS FOR ENCODING AND DECODING IN TRELLIS CODED MODULATION SYSTEMS
    117.
    发明申请
    METHODS AND SYSTEMS FOR ENCODING AND DECODING IN TRELLIS CODED MODULATION SYSTEMS 有权
    TRLLIS编码调制系统编码和解码的方法与系统

    公开(公告)号:US20120110410A1

    公开(公告)日:2012-05-03

    申请号:US13285327

    申请日:2011-10-31

    摘要: Systems and methods for encoding and decoding for communications or storage systems utilizing coded modulation are provided. A first portion of data is encoded with a first at least one encoding scheme. A second portion of the data id encoded with a second encoding scheme. A coset is selected from a plurality of cosets based at least in part on the encoded first portion of the data, where the plurality of cosets corresponds to a partition of a signal constellation. A signal vector is selected within the selected coset based at least in part on the encoded second portion of the data.

    摘要翻译: 提供了利用编码调制的用于通信或存储系统的编码和解码的系统和方法。 数据的第一部分用第一至少一个编码方案编码。 用第二编码方案编码的数据id的第二部分。 至少部分地基于编码的数据的第一部分从多个陪集中选择陪集,其中多个陪集对应于信号星座的分区。 至少部分地基于编码的数据的第二部分,在所选择的陪集中选择信号向量。

    Adaptive systems and methods for storing and retrieving data to and from memory cells
    118.
    发明授权
    Adaptive systems and methods for storing and retrieving data to and from memory cells 有权
    用于存储和从存储单元检索数据的自适应系统和方法

    公开(公告)号:US08171380B2

    公开(公告)日:2012-05-01

    申请号:US11867858

    申请日:2007-10-05

    申请人: Xueshi Yang Zining Wu

    发明人: Xueshi Yang Zining Wu

    IPC分类号: H03M13/00

    CPC分类号: G06F11/1048

    摘要: Adaptive systems and methods that may help assure the reliability of data retrieved from memory cells are described herein. The systems may include a memory device including a plurality of memory cells, a data quality monitoring block, and an adaptive data encoding block, the data quality monitoring block and the adaptive data encoding block both being operatively coupled to the memory device. The data quality monitoring block may be configured to determine a quality value of a group of one or more memory cells included in the memory device, the determined quality value being indicative of a quality of the group of one or more memory cells. The adaptive data encoding block may be configured to select a coding scheme from a plurality of coding schemes to encode data to be written to the group of one or more memory cells in the memory device, the selection of the coding scheme being based at least in part on the determined quality value of the group of one or more memory cells.

    摘要翻译: 这里描述了可能有助于确保从存储器单元检索的数据的可靠性的自适应系统和方法。 系统可以包括包括多个存储器单元,数据质量监控块和自适应数据编码块的存储器件,数据质量监控块和自适应数据编码块都可操作地耦合到存储器件。 数据质量监测块可以被配置为确定存储器件中包括的一个或多个存储器单元的组的质量值,所确定的质量值指示一个或多个存储器单元的组的质量。 自适应数据编码块可以被配置为从多个编码方案中选择编码方案来编码要写入存储器件中的一个或多个存储器单元的组的数据,编码方案的选择至少基于 部分是确定的一个或多个存储单元的组的质量值。

    Reference voltage optimization for flash memory
    119.
    发明授权
    Reference voltage optimization for flash memory 有权
    Flash存储器参考电压优化

    公开(公告)号:US08159881B2

    公开(公告)日:2012-04-17

    申请号:US12791430

    申请日:2010-06-01

    申请人: Xueshi Yang

    发明人: Xueshi Yang

    IPC分类号: G11C11/34

    摘要: A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.

    摘要翻译: 系统包括电压发生器和参考电压设定模块。 电压发生器被配置为产生要施加到存储器单元的K电压。 K电压用于确定用于读取存储器单元的参考电压,其中K是大于1的整数。参考电压设置模块被配置为选择性地将参考电压设置为K个电压中的两个相邻电压之间的值 或K个电压中的两个相邻的电压之一。

    Method and system for programming multi-state memory
    120.
    发明授权
    Method and system for programming multi-state memory 有权
    多状态存储器编程方法和系统

    公开(公告)号:US08144510B1

    公开(公告)日:2012-03-27

    申请号:US12404570

    申请日:2009-03-16

    申请人: Xueshi Yang Zining Wu

    发明人: Xueshi Yang Zining Wu

    IPC分类号: G11C11/34

    CPC分类号: G11C11/5628

    摘要: In a multi-level memory cell, when data to be programmed arrives, the cell is programmed to the lowest-charge state in which any bit position that is being programmed or has already been programmed has the correct value, regardless of the value in that state of any bit position that has not yet been programmed and is not being programmed. The programming of other bit positions based on subsequently arriving data should not then require a transition to an impermissible lower energy state. Although this may result in a transient condition in which some bits have the wrong value, by the time programming is complete, all bits would be expected to have the correct value. A cell may contain any number of bits equal to or greater than two, and programming may be performed cyclically (e.g., from LSB to MSB), anticyclically (e.g., from MSB to LSB), or in any random order.

    摘要翻译: 在多级存储器单元中,当要编程的数据到达时,单元被编程为最低充电状态,其中正被编程或已被编程的任何位位置具有正确的值,而不管其值如何 任何尚未编程且未被编程的位位置的状态。 基于随后到达的数据的其他位位置的编程不应该需要转换到不允许的较低能量状态。 尽管这可能导致某些位具有错误值的瞬态条件,但在编程完成时,所有位将被预期具有正确的值。 单元可以包含等于或大于2的任何数量的位,并且可以循环(例如,从LSB到MSB),反周期地(例如,从MSB到LSB)或以任何随机顺序执行编程。