摘要:
The present disclosure includes systems and techniques relating to non-volatile memory. A described device includes a non-volatile memory structure including a first data area, and a second data area that stores information. The information can include a first value corresponding to the first data area, the first value being set responsive to a last programming cycle on the first data area, and a second value indicating a total number of programming or erasing operations on the first data area.
摘要:
Embodiments provide a method for reading a target memory sector of a memory. The method comprises, based on read data corresponding to a plurality of memory sectors of the memory, estimating first one or more reference voltages and, using the first one or more reference voltages, performing a first read operation on the target memory sector. The method further comprises determining an error correcting code (ECC) decoding failure of the first read operation and, in response to determining the ECC decoding failure of the first read operation and based on read data corresponding to the target memory sector, updating the estimate of the first one or more reference voltages to generate second one or more reference voltages. The method also comprises using the second one or more reference voltages, performing a second read operation on the target memory sector.
摘要:
Embodiments of the present disclosure provide methods and apparatus for providing a NAND flash memory arrangement that comprises a source select line (SSL), a drain select line (DSL) and a plurality of NAND memory cells arranged to provide a plurality of data pages. The method further includes defining a first set of data pages in close proximity to the SSL, defining a second set of data pages in close proximity to the DSL, and differentiating the first set of data pages and the second set of data pages from at least the remaining data pages.
摘要:
This disclosure describes techniques for reducing the number of data transmissions required to read an amount of data from multi-level-cell (MLC) flash memory. These techniques effectively increase the speed at which MLC flash memory can be read. This disclosure also describes techniques for determining whether or not a flash-memory cell has a high probability of an error by determining whether a voltage threshold is in close proximity to a reference voltage.
摘要:
Systems and methods for decoding data using a hybrid decoder are provided. A data signal that includes a codeword is received. A signal quality indicator for the data signal is computed. One of a plurality of decoders is selected based on the computed signal quality indicator. Each of the plurality of decoders is configured to decode information based on a different decoding technique. The codeword included in the data signal is decoded using the selected one of the plurality of decoders.
摘要:
Systems and methods are provided that use LDPC codes to determine the locations of insertions or deletions within bit-strings of information transmitted through communication channels and which notify a LDPC decoder of the locations of the insertions or deletions prior to the start of the decoding process. The use of such systems and methods, according to this disclosure, may improve LDPC decoder performance by reducing errors cause by insertions and/or deletions. The use of such systems and methods, according to this disclosure, may also provide improved application performance and larger data transmission rates.
摘要:
Systems and methods for encoding and decoding for communications or storage systems utilizing coded modulation are provided. A first portion of data is encoded with a first at least one encoding scheme. A second portion of the data id encoded with a second encoding scheme. A coset is selected from a plurality of cosets based at least in part on the encoded first portion of the data, where the plurality of cosets corresponds to a partition of a signal constellation. A signal vector is selected within the selected coset based at least in part on the encoded second portion of the data.
摘要:
Adaptive systems and methods that may help assure the reliability of data retrieved from memory cells are described herein. The systems may include a memory device including a plurality of memory cells, a data quality monitoring block, and an adaptive data encoding block, the data quality monitoring block and the adaptive data encoding block both being operatively coupled to the memory device. The data quality monitoring block may be configured to determine a quality value of a group of one or more memory cells included in the memory device, the determined quality value being indicative of a quality of the group of one or more memory cells. The adaptive data encoding block may be configured to select a coding scheme from a plurality of coding schemes to encode data to be written to the group of one or more memory cells in the memory device, the selection of the coding scheme being based at least in part on the determined quality value of the group of one or more memory cells.
摘要:
A system includes a voltage generator and a reference voltage setting module. The voltage generator is configured to generate K voltages to be applied to memory cells. The K voltages are used to determine a reference voltage used to read the memory cells, where K is an integer greater than 1. The reference voltage setting module is configured to selectively set the reference voltage to a value between two adjacent ones of the K voltages or one of the two adjacent ones of the K voltages.
摘要:
In a multi-level memory cell, when data to be programmed arrives, the cell is programmed to the lowest-charge state in which any bit position that is being programmed or has already been programmed has the correct value, regardless of the value in that state of any bit position that has not yet been programmed and is not being programmed. The programming of other bit positions based on subsequently arriving data should not then require a transition to an impermissible lower energy state. Although this may result in a transient condition in which some bits have the wrong value, by the time programming is complete, all bits would be expected to have the correct value. A cell may contain any number of bits equal to or greater than two, and programming may be performed cyclically (e.g., from LSB to MSB), anticyclically (e.g., from MSB to LSB), or in any random order.