摘要:
The present invention relates to a sensor apparatus having a structure capable of obtaining digital values of signal components with a high accuracy using an A/D conversing circuit with the outputted digital value thereof having a small number of expressive bits. In the sensor apparatus, a voltage value corresponding to the amount of incident light to a photodiode is held by a holding circuit through an integrating circuit and a CDS circuit. Meanwhile, a voltage value corresponding to the amount of incident light to an adjacent photodiode is held by another holding circuit through an integrating circuit and a CDS circuit. The voltage values held by the respective different holding circuits are inputted to a subtracting circuit through different paths. The subtracting circuit outputs a voltage value corresponding to the difference between the two inputted voltage values. In an A/D converting section, the difference voltage outputted from the subtracting circuit is converted into a digital value.
摘要:
The A/D converting circuit 20 is provided with a differential amplifying portion 21, a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23, a connection controlling portion 24, a first feedback portion 25A and a second feedback portion 25B. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portion 21 are converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23 and a connection controlling portion 24) and output. A difference in potential between the first common point P1 and the second common point P2 is fed back to the differential amplifying portion 21 by the first feedback portion 25A and the second feedback portion 25B, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.
摘要:
An image sensor 20A contains a photodiode array portion 21, a signal processor 22, a switching instruction part 23A and a control part 24A. Each switch SWn is provided between the corresponding photodiode PDn and the common output line L, and instructed to carry out the switching operation by the switching instruction part 23A so as to be closed, whereby the charges accumulated in the junction capacitance portion of the photodiode PDn are output to the common output line L. On the basis of the instruction from the switching instruction part 23A, the N switches SW1 to SWN carry out the switching operation so that the N switches SW1 to SWN are set to the close state in the different periods and the interval at which each switch SWn is set to the close state is equal to an integral multiple of a base period. As described above, the charge accumulation time of each of the N photodiodes PD1 to PDN is set to an integral multiple of the base period.
摘要:
The A/D converting circuit 20 is provided with a differential amplifying portion 21, a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23, a connection controlling portion 24, a first feedback portion 25A and a second feedback portion 25B. Voltage values output as a differential signal from the first output terminal and the second output terminal of the differential amplifying portion 21 are converted to 6-bit digital values by a successive approximation type A/D converting circuit (made up of a first variable capacitance portion 22A, a second variable capacitance portion 22B, a comparing portion 23 and a connection controlling portion 24) and output. A difference in potential between the first common point P1 and the second common point P2 is fed back to the differential amplifying portion 21 by the first feedback portion 25A and the second feedback portion 25B, and again converted to a 6-bit digital value by the successive approximation type A/D converting circuit and output.
摘要:
An encoder includes a first rotating body and a second rotating body which have slits formed therein and rotate interlockingly with each other; a light source device which emits to-be-detected light to the slits; and a photodetecting device which includes a first scale and a second scale having a plurality of photodetectors aligned along annular alignment lines, and an output part which outputs output signals based on light intensities of the to-be-detected light made incident on the photodetectors of the first scale and the second scale through the slit. The rotation ratio of the second rotating body is different from that of the first rotating body, and to the photodetectors, attributes are assigned every predetermined phase angle.
摘要:
The present invention aims at providing a photodetector which can improve each of the dynamic range, S/N ratio, and speed of light detection. A photodiode PDm,n generates electric charges by an amount corresponding to the incident light intensity, and accumulates thus generated electric charges into a junction capacitance part. An electric charge amount level determining circuit 10m,n determines the level of amount of electric charges generated by the photodiode PDm,n and accumulated in the junction capacitance part. In an integrating circuit 20m, the capacitance value of an integral capacitance part 21 is set according to the result of electric charge amount level determination, the electric charges inputted from the photodiode PDm,n by way of a switch SW1m,n are accumulated into the integral capacitance part 21, and a voltage V20 corresponding to the amount of thus accumulated electric charges is outputted. The voltage Vinp fed to a non-inverting input terminal of an amplifier A in the integrating circuit 20m is set greater in a second period during which the integral capacitance part 21 of the integrating circuit 20m accumulates electric charges than in a first period during which the junction capacitance part of the photodiode PDm,n accumulates electric charges.
摘要翻译:本发明的目的在于提供一种可以改善动态范围,S / N比和光检测速度的每个光检测器。 光电二极管PD< m> m< n>产生与入射光强度相对应的量的电荷,并将由此产生的电荷累积到结电容部分中。 电荷量水平确定电路10 m,n N确定由结合电容部分中累积的光电二极管PD m m n n产生的电荷量。 在积分电路20中,积分电容部分21的电容值根据电荷量水平确定的结果设定,从光电二极管PD m m输入的电荷 通过开关SW 1 m,n n累积到积分电容部分21中,并且与由此累积的电量相对应的电压V 20 SUB> 输出费用。 馈送到积分电路20中的放大器A的非反相输入端子的电压V in in SUB>在第二周期内被设定得更大,在该周期期间,积分电容部分21 积分电路20< m>累积电荷比在光电二极管PD< m> m的结电容部分累积电荷的第一周期。
摘要:
The present invention relates to a solid-state image pickup apparatus which allows, when being applied as an element of a solid-state image pickup array, to reduce a non-sensitive region between the adjacent devices, and can thus obtain more accurate imaging results. The solid-state image pickup apparatus comprises a photodetecting section, an output section, a row selecting section, and a column selecting section, and further comprises M waveform shaping circuits as waveform shaping means for shaping the waveforms of row selecting signals. A row selecting signal outputted from the row selecting section is shaped by the waveform shaping circuit and is then inputted into N pixels that constitute an mth row of the photodetecting section.
摘要:
The present invention relates to a photo-detecting apparatus having a structure which can accurately detect light by restraining noises from occurring. The photo-detecting apparatus comprises a first substrate having a surface provided with M×N photodiodes and switches; a second substrate having a surface provided with signal processing parts for processing output signals of the photodiodes; and a third substrate arranged between the first and second substrates. The third substrate has a first surface opposing the first substrate and a second surface opposing the second substrate. In the third substrate, M common wires for connecting the photodiodes to the signal processing parts are arranged on the first surface, whereas bonding pads connected to the respective common wires are arranged on the second surface. The photodiodes on the first substrate are electrically connected to their corresponding common wires in the third substrate by way of first bumps, whereas the signal processing parts on the second substrate are electrically connected to their corresponding bonding pads in the third substrate by way of second bumps.
摘要:
The present invention aims at providing a photodetector capable of fast operation with inclusion of A/D converting circuits. With a photodetector 1, (K×M×N) photodiodes PDk,m,n are arranged in M rows and (K×N) columns in a photodetection unit 10, and processes (electric charge accumulation, CDS, filtering, and A/D conversion) regarding each of the (K×N) photodiodes PDk,m,n (k=1 to K, n=1 to N) of each row are carried out successively at each time T. Meanwhile, each of an electric charge accumulation operation in an integrating circuit 20m,n, a CDS operation in a CDS 30m,n, a filterng operation in a filter circuit 40m,n, and an A/D conversion oepration in an A/D converter 50m,n, is carried out at each time N×T).
摘要:
An integration circuit 10 comprises: an amplifier and an integration capacitance section arranged in parallel to each other between an input terminal and an output terminal; and capacitance value switching means for switching the capacitance value of the integration capacitance section into any one of Cf1 through CfK; and inputs electric charge output from a photodiode PD, so as to accumulate the electric charge into the integration capacitance section, so as to output an integration voltage having a value corresponding to the amount of the accumulated electric charge. An A/D converter circuit 20 comprises reference voltage switching means for switching a reference voltage used in A/D conversion, into any one of Vref,1 through Vref,L, and inputs the integration voltage output from the integration circuit 10, so as to A/D-convert the integration voltage on the basis of the reference voltage switched and set to be by the reference voltage switching means, so as to output a digital value corresponding to the integration voltage.