公开(公告)号：US07443194B1

公开(公告)日：2008-10-28

申请号：US12109285

申请日：2008-04-24

申请人： David Jia Chen ,  William Frederick Lawson ,  David William Mann

发明人： David Jia Chen ,  William Frederick Lawson ,  David William Mann

IPC分类号： H03K19/003

CPC分类号： H03K19/0005

摘要： An I/O driver has v/i characteristic control for maintaining a substantially flat output impedance response using a transmission gate configuration at an I/O output pad. The configuration includes a linear resistive element electrically connected at an I/O pad for limiting a processed data I/O signal, an active impedance element for receiving and processing the data signal, which comprises data represented by a series of voltage state transitions, and pull-up and pull-down array calibration words, for generating and outputting a processed I/O output signal to the resistive element to output a substantially flat v/i response at switching of the data signal.

摘要翻译： I / O驱动器具有v / i特性控制，用于使用I / O输出板上的传输门配置来维持基本平坦的输出阻抗响应。 该配置包括在I / O焊盘处电连接以限制经处理的数据I / O信号的线性电阻元件，用于接收和处理数据信号的有源阻抗元件，其包括由一系列电压状态转换表示的数据，以及 上拉和下拉阵列校准字，用于在切换数据信号时产生并输出经过处理的I / O输出信号到电阻元件以输出基本平坦的v / i响应。

公开(公告)号：US07384868B2

公开(公告)日：2008-06-10

申请号：US10662900

申请日：2003-09-15

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L21/44

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US20060151844A1

公开(公告)日：2006-07-13

申请号：US11031168

申请日：2005-01-07

申请人： Phaedon Avouris ,  Roy Carruthers ,  Jia Chen ,  Christophe Detavernier ,  Christian Lavoie ,  Hon-Sum Wong

发明人： Phaedon Avouris ,  Roy Carruthers ,  Jia Chen ,  Christophe Detavernier ,  Christian Lavoie ,  Hon-Sum Wong

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/6656 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/665 ,  H01L29/7833 ,  H01L51/0048 ,  H01L51/0541 ,  Y10S977/847 ,  Y10S977/938

摘要： A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

公开(公告)号：US20060014680A1

公开(公告)日：2006-01-19

申请号：US10890546

申请日：2004-07-13

申请人： Caiding Xu ,  Lydie Yang ,  Ashok Bhandari ,  Chris Holmes ,  Min-Jia Chen ,  Peter Schatz ,  Palani Balu

发明人： Caiding Xu ,  Lydie Yang ,  Ashok Bhandari ,  Chris Holmes ,  Min-Jia Chen ,  Peter Schatz ,  Palani Balu

IPC分类号： A61K38/16 ,  A61K38/08 ,  A61K38/10 ,  C07K7/64 ,  C07K7/08

CPC分类号： C07K7/08 ,  A61K38/00

摘要： New IL-5 receptor antagonists and methods of use are described, e.g., in the treatment of IL-5 receptor mediated disorders. The compounds include both monomers and dimers that were identified using one or more of alanine scans, lysine scans, other residue substitutions, and C- and N-terminal truncations and additions vis a vis the core sequence Val Asp Glu Cys Trp Arg Ile Ile Ala Ser His Thr Trp Phe Cys Ala Glu Glu-AF17121 (SEQ ID NO: 1) and shorter sequences and derivatives thereof.

摘要翻译： 描述了新的IL-5受体拮抗剂和使用方法，例如在治疗IL-5受体介导的病症中。 化合物包括使用一个或多个丙氨酸扫描，赖氨酸扫描，其他残基取代和C-和N-末端截短并相对于核心序列添加的两种单体和二聚体Val Asp Glu Cys Trp Arg Ile Ile Ala Ser His Thr Trp Phe Cys Ala Glu Glu-AF17121（SEQ ID NO：1）及其较短的序列和衍生物。

公开(公告)号：US20050210712A1

公开(公告)日：2005-09-29

申请号：US10811335

申请日：2004-03-26

申请人： Guo Jau ,  Jia Chen

发明人： Guo Jau ,  Jia Chen

IPC分类号： A43B5/00 ,  A43B5/14

CPC分类号： A43B5/14

摘要： A shoe includes a shoe sole having one or more slots to detachably attach a cleat member which may be attached to cycle pedal. A plate is selectively attached to the shoe sole and has an opening to receive the cleat member, and to allow the cleat member to extend out of the plate, and to be attached to the cycle pedal. The plate includes one or more bulges or pegs to engage into the shoe sole and to anchor the plate to the shoe sole. One or more cleat elements may be detachably attached to the shoe sole, and partially received in depressions of the shoe sole, to anchor the cleat element to the shoe sole.

摘要翻译： 鞋包括具有一个或多个狭槽的鞋底，以可拆卸地附接可附接到循环踏板的防滑钉构件。 板被选择性地附接到鞋底并具有用于接收防滑板构件的开口，并且允许防滑板构件延伸出板并且附接到循环踏板。 板包括一个或多个凸起或栓，以接合鞋底并将板锚定到鞋底上。 一个或多个防滑钉元件可以可拆卸地附接到鞋底，并且部分地容纳在鞋底的凹陷中，以将防滑钉元件锚定到鞋底。