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    Reduction of silicide formation temperature on SiGe containing substrates
    1.
    发明授权
    Reduction of silicide formation temperature on SiGe containing substrates 有权
    在含SiGe的基板上降低硅化物的形成温度

    公开(公告)号：US07384868B2

    公开(公告)日：2008-06-10

    申请号：US10662900

    申请日：2003-09-15

    申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518

    摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

    摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

    Reduction of silicide formation temperature on SiGe containing substrates
    2.
    发明授权
    Reduction of silicide formation temperature on SiGe containing substrates 有权
    在含SiGe的基板上降低硅化物的形成温度

    公开(公告)号：US08125082B2

    公开(公告)日：2012-02-28

    申请号：US12120854

    申请日：2008-05-15

    申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christopher Detavernier ,  James M. Harper ,  Christian Lavoie

    发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christopher Detavernier ,  James M. Harper ,  Christian Lavoie

    IPC分类号： H01L29/161

    CPC分类号： H01L21/28518

    摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

    摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

    REDUCTION OF SILICIDE FORMATION TEMPERATURE ON SiGe CONTAINING SUBSTRATES
    3.
    发明申请
    REDUCTION OF SILICIDE FORMATION TEMPERATURE ON SiGe CONTAINING SUBSTRATES 有权
    在含SiGe衬底上减少硅化物形成温度

    公开(公告)号：US20080246120A1

    公开(公告)日：2008-10-09

    申请号：US12120854

    申请日：2008-05-15

    申请人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    发明人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

    IPC分类号： H01L29/161

    CPC分类号： H01L21/28518

    摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

    摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。