公开(公告)号：US10908192B2

公开(公告)日：2021-02-02

申请号：US16570527

申请日：2019-09-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Bruno Gailhard

IPC: G01R19/165 ,  G06F1/28

Abstract: A method includes selecting at least one first voltage that defines subsets of DC voltages from among an ordered set of DC voltages, comparing the first voltage with a DC reference voltage, selecting one of the subsets based on a result of the comparing, and comparing each voltage of the selected subset with the reference voltage.

公开(公告)号：US10903209B2

公开(公告)日：2021-01-26

申请号：US16053304

申请日：2018-08-02

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Francois Tailliet

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/10 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78

Abstract: An electronic chip is provided that includes a plurality of first transistors electrically coupled to one another in parallel. A plurality of first isolating trenches is included in the electronic chip, and the first transistors are separated from one another by the first isolating trenches. Each of the first isolation trenches has a depth and a maximum width, and the depth depends on, or is a function of, the maximum width.

公开(公告)号：US10895856B2

公开(公告)日：2021-01-19

申请号：US16155355

申请日：2018-10-09

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara

IPC: G05B19/042 ,  G04G19/12 ,  G04G19/10 ,  H02J7/00 ,  H04L29/08 ,  H04W52/02 ,  H02J9/00 ,  H02J7/34

Abstract: A system, supplied by a power supply, is switched into standby mode by an electronic device that includes a charging input coupled to a charge voltage obtained from the voltage delivered by the power supply. A first input is coupled to the power supply and a power supply output is coupled to the system. A storage capacitive element is coupled to the charging input and configured to be charged by the charge voltage. A switching circuit, coupled between the first input and the power supply output, disconnects the power supply output from the first input when the voltage across the terminals of the storage capacitive element is higher than a threshold. A discharge circuit discharges the storage capacitive element so that the capacitor voltage becomes lower than the threshold. The switching circuit further re-connects the first input to the power supply output at the end of the discharge period.

公开(公告)号：US20210012208A1

公开(公告)日：2021-01-14

申请号：US16917414

申请日：2020-06-30

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Rousset) SAS

Inventor： Laurent Folliot ,  Pierre Demaj ,  Emanuele Plebani

IPC: G06N3/10 ,  G06N3/04 ,  G06N3/08

Abstract: A method can be performed prior to implementation of a neural network by a processing unit. The neural network comprising a succession of layers and at least one operator applied between at least one pair of successive layers. A computational tool generates an executable code intended to be executed by the processing unit in order to implement the neural network. The computational tool generates at least one transfer function between the at least one pair of layers taking the form of a set of pre-computed values.

公开(公告)号：US10886283B2

公开(公告)日：2021-01-05

申请号：US16525780

申请日：2019-07-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Abderrezak Marzaki ,  Pascal Fornara

IPC: H01L27/11 ,  H01L27/112 ,  H01L23/00 ,  G11C17/18 ,  G11C17/16 ,  H01L23/525

Abstract: An integrated circuit includes at least one antifuse element. The antifuse element is formed from a semiconductor substrate, a trench extending down from a first face of the semiconductor substrate into the semiconductor substrate, a first conductive layer housed in the trench and extending down from the first face of the semiconductor substrate into the semiconductor substrate, a dielectric layer on the first face of the semiconductor substrate, and a second conductive layer on the dielectric layer. A program transistor selectively electrically couples the second conductive layer to a program voltage in response to a program signal. A program/read transistor selectively electrically couples the first conductive layer to a ground voltage in response to the program signal and in response to a read signal. A read transistor selectively electrically couples the second conductive layer to a read amplifier in response to the read signal.

公开(公告)号：US10861802B2

公开(公告)日：2020-12-08

申请号：US16208253

申请日：2018-12-03

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Pascal Fornara ,  Guilhem Bouton ,  Mathieu Lisart

IPC: H01L21/311 ,  H01L23/00 ,  H01L23/58 ,  H01L21/8234 ,  H01L23/528 ,  H01L27/088 ,  H01L23/522 ,  H01L21/768

Abstract: An integrated circuit includes a semiconductor substrate and a multitude of electrically conductive pads situated between component zones of the semiconductor substrate and a first metallization level of the integrated circuit, respectively. The multitude of electrically conductive pads are encapsulated in an insulating region and include: first pads, in electrical contact with corresponding first component zones, and at least one second pad, not in electrical contact with a corresponding second component zone.

公开(公告)号：US20200382165A1

公开(公告)日：2020-12-03

申请号：US16879314

申请日：2020-05-20

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni

IPC: H04B5/00

Abstract: The present disclosure relates to a detection method or device, by a first NFC device generating an electromagnetic field for recharging a battery of a second NFC device, of a disruptive condition, in which thresholds (MHTH, MLTH, PHTH, PLTH) for detection of a variation of the field are adjusted in real time during the recharging.

公开(公告)号：US20200381617A1

公开(公告)日：2020-12-03

申请号：US16879577

申请日：2020-05-20

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS (ROUSSET) SAS

Inventor： Philippe BOIVIN ,  Daniel BENOIT ,  Remy BERTHELON

IPC: H01L45/00 ,  H01L27/24

Abstract: The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.

公开(公告)号：US10826566B2

公开(公告)日：2020-11-03

申请号：US16286345

申请日：2019-02-26

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Gwenael Maillet ,  Jean-Louis Labyre ,  Gilles Bas

IPC: H04B5/00 ,  G06K19/07

Abstract: A system includes a near-field communication device configured to transmit a radio frequency control signal in a near-field regime and an interface. The interface includes a near-field communication circuit configured to receive the RF control signal. The interface further includes a pulse width modulation signal generation circuit configured to generate a pulse width modulation signal according to the radio frequency control signal. The system further includes an electrically-controllable equipment configured to be controlled by the pulse width modulation signal.

公开(公告)号：US10812058B2

公开(公告)日：2020-10-20

申请号：US16518474

申请日：2019-07-22

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Rousset) SAS

Inventor： Vincent Binet ,  David Chesneau

IPC: H03K3/013 ,  H03K5/24 ,  H03K5/1252 ,  H03K3/0233 ,  H03F3/19 ,  H03K19/20 ,  H03K5/00

Abstract: A method for controlling operation of a comparator that includes an amplifier that is connected at an input of the comparator includes neutralizing any change of state of a signal output by the comparator starting from each moment in time at which the change of state of the output signal occurs and lasting for a duration of propagation to compensate for a duration of propagation of signals within the amplifier.