摘要:
A circuit and method are disclosed for monitoring the voltage level of an unregulated power supply. The circuit includes a voltage reference circuit for generating a first reference voltage signal and a trim circuit which generates a trimmed reference voltage signal based upon the first reference voltage signal. A comparator compares the unregulated power supply voltage to the trimmed reference voltage signal and asserts an output signal based upon the comparison. The output signal is fed back as an input to the trim circuit so that the trim circuit provides a hysteresis effect.
摘要:
A reference voltage trim circuit includes a voltage follower receiving the reference voltage to be trimmed, with one or more resistive loads providing predefined voltage shifts serially connected between the output of the voltage follower and the output of the trim circuit. The voltage follower includes a current mirror differential amplifier receiving the reference voltage at one input and the output of the voltage follower at the other input, and a transistor with a resistive load connected between the power supply voltages and receiving the output of the current mirror differential amplifier at the transistor's gate. The resistive loads provide varying preselected voltage drop and are each shunted by corresponding fuses, with the entire series of resistive loads shunted by a master fuse. To trim the reference voltage, at least the master fuse is blown, together with the fuse(s) shunting resistive loads which combine to result in the desired trim voltage. Pass gates control which end of the resistive load series is connected to the output of the voltage follower and which is connected to the output of the trim circuit. To decrement the reference voltage, a first end is connected to the output of the voltage follower and the second end is connected to trim circuit output; to increment the reference voltage, the second end of the resistive load series is connected to the voltage follower output and the first end is connected to the trim circuit output.
摘要:
A multiplexing circuit includes a reference terminal, a plurality of multiplexing input terminals, and a buffer having an input terminal and an output terminal. The multiplexing circuit also includes a plurality of first elements that each have a programmable conductivity and that are each serially coupled between a corresponding one of the multiplexing input terminals and the input terminal of the buffer. When one of the input signals is to be coupled to the multiplexer output terminal, the element corresponding to the selected input signal is programmed in a conductive state, and the remaining elements are programmed in a nonconductive state. When none of the input signals are selected, each element is programmed in a conductive state and the input signals each have the same value so as to prevent signal conflicts and short circuits at nodes within the multiplexing circuit.
摘要:
A signal driver receives an input signal and an enable signal, and generates an output signal from the input signal when the enable signal has an active state. When the enable signal has an inactive state, the signal driver draws substantially zero supply current regardless of the level of the input signal. The enable signal may be the sense-amplifier enable signal. The signal driver may also include an input circuit that receives the input signal and generates an intermediate signal from the input signal when the enable signal has the first state. An output circuit is coupled to the input circuit, receives the intermediate signal, and generates the output signal from the intermediate signal. A switch circuit is coupled to the input circuit, receives the enable signal, and cuts off substantially all supply current to the input circuit when the enable signal has the second state.
摘要:
A signal driver receives an input signal and an enable signal, and generates an output signal from the input signal when the enable signal has an active state. When the enable signal has an inactive state, the signal driver draws substantially zero supply current regardless of the level of the input signal. The enable signal may be the sense-amplifier enable signal. The signal driver may also include an input circuit that receives the input signal and generates an intermediate signal from the input signal when the enable signal has the first state. An output circuit is coupled to the input circuit, receives the intermediate signal, and generates the output signal from the intermediate signal. A switch circuit is coupled to the input circuit, receives the enable signal, and cuts off substantially all supply current to the input circuit when the enable signal has the second state.
摘要:
A semiconductor integrated-circuit die includes a substrate of semiconductor material that has an edge. A conductive layer is disposed on the substrate, and a first insulator layer is disposed between the said substrate and the conductive layer. A functional circuit is disposed in the die. A conductive path is disposed beneath the insulator layer and is coupled to the circuit, the conductive path having an end portion that is located substantially at the edge of the substrate. The wafer on which the die is disposed has one or more signal lines that run along the scribe lines of the wafer. Before the die is scribed from the wafer, the conductive path couples the circuit on the die to one of these signal lines. The end portion of the conductive path is formed when the die is scribed from the wafer.
摘要:
A memory device includes an array of matrix memory cells that each correspond to a matrix location within the matrix array, an array of redundant memory cells that each correspond to a redundant location within the redundant array, and address and test circuitry. During a first test mode that is performed before any redundant cells have been mapped to the addresses of matrix locations, the address and test circuitry simultaneously addresses all of the matrix locations and selects all of the redundant memory cells. During a second test mode that is performed after the first test mode, the address and test circuitry simultaneously addresses all of the matrix locations and selects only those redundant memory cells that are mapped to the addresses of matrix locations. Typically, the redundant memory cells are so mapped to replace defective matrix memory cells.
摘要:
A circuit biases an associated pair of bit lines. A fuse is coupled between a biasing voltage and a node. A first load is coupled between the node and a first of the bit lines. A second load is coupled between the node and a second of the bit lines.
摘要:
A driver circuit writes data to a memory cell during a write cycle and uncouples the write power terminals from the write terminals during a test mode. The driver circuit includes a first and second data input terminals that typically receive complementary data signals during a write cycle, a test terminal, a write-enable terminal, first and second write power terminals, and first and second write terminals that are coupled to the memory cell. The circuit respectively uncouples the first and second write terminals from the first and second write power terminals when a first signal level, which indicates the test mode, is present on the test terminal. The driver circuit may also couple the first and second write terminals to a reference voltage such as a ground voltage when the first signal level is present on the test terminal.
摘要:
A memory device includes an address decoder, a global data line, and a plurality of memory blocks, which are each coupled to the address decoder and the global data line. Each memory block includes a plurality of column lines, a local data line, and a plurality of memory cells that are arranged in columns and are each coupled to a corresponding one of the column lines. Each memory block also includes or has associated therewith a switching circuit that is coupled to the column lines and the local data line. The switching circuit couples a selected column line to the local data line and couples the local data line to the global data line when the memory block is selected. The switching circuit uncouples each of the column lines from the local data line when the memory block is unselected, or during a read cycle when the memory block is selected and the sense-amplifier is enabled.