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    Image sensors and electronic devices
    121.
    发明授权
    Image sensors and electronic devices 有权

    公开(公告)号：US10979680B2

    公开(公告)日：2021-04-13

    申请号：US16182037

    申请日：2018-11-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Kyung Bae Park ,  Sung Young Yun ,  Dong-Seok Leem ,  Yong Wan Jin

    IPC: H04N9/04 ,  H04N5/32 ,  H01L27/146

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

    Photoelectric devices and image sensors and electronic devices
    123.
    发明授权
    Photoelectric devices and image sensors and electronic devices 有权

    公开(公告)号：US10854832B2

    公开(公告)日：2020-12-01

    申请号：US16178692

    申请日：2018-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Chul Joon Heo ,  Moon Gyu Han ,  Yong Wan Jin

    IPC: H01L51/42 ,  H01L27/30 ,  H01L51/44 ,  H01L51/00 ,  H01L27/146

    Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.

    Photoelectric device and image sensor and electronic device
    125.
    发明授权
    Photoelectric device and image sensor and electronic device 有权

    公开(公告)号：US10546897B2

    公开(公告)日：2020-01-28

    申请号：US15478580

    申请日：2017-04-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Young Yun ,  Gae Hwang Lee ,  Kyung Bae Park ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Xavier Bulliard ,  Yong Wan Jin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/00

    Abstract: A photoelectric device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and including a light absorbing material configured to selectively absorb first visible light including one of visible light in a blue wavelength region of greater than or equal to about 380 nm and less than about 500 nm, visible light in a green wavelength region of about 500 nm to about 600 nm, and visible light in a red wavelength region of greater than about 600 nm and less than or equal to about 700 nm, and a plurality of nanostructures between the first electrode and the photoelectric conversion layer and configured to selectively reflect the first visible light.

    Image sensors and electronic devices including the same
    128.
    发明授权
    Image sensors and electronic devices including the same 有权

    公开(公告)号：US10361251B2

    公开(公告)日：2019-07-23

    申请号：US15618750

    申请日：2017-06-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Moon Gyu Han

    IPC: H01L27/30 ,  H01L27/28 ,  H01L27/146

    Abstract: Image sensors, and electronic devices including the image sensors, include a first photoelectronic device including at least one of a blue photoelectronic device sensing light in a blue wavelength region, a red photoelectronic device sensing light in a red wavelength region, and a green photoelectronic device sensing light in a green wavelength region, and a second photoelectronic device stacked on one side of the first photoelectronic device without being interposed by a color filter, wherein the second photoelectronic device senses light in an infrared region.

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