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公开(公告)号：US20210035632A1
公开(公告)日：2021-02-04
申请号：US17075689
申请日：2020-10-20
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang , Hsiao-Te Chang , Wen-Long Wang
Abstract: A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.
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公开(公告)号：US20210005269A1
公开(公告)日：2021-01-07
申请号：US17024718
申请日：2020-09-18
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for reading data stored in a flash memory includes at least the following steps: controlling the flash memory to perform a plurality of read operations upon a plurality of memory cells included in the flash memory; obtaining a plurality of bit sequences read from the memory cells, respectively, wherein the read operations read bits of a predetermined bit order from the memory cells by utilizing different control gate voltage settings; and determining readout information of the memory cells according to binary digit distribution characteristics of the bit sequences.
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123.发明授权公开(公告)号：US10884851B2
公开(公告)日：2021-01-05
申请号：US16056555
申请日：2018-08-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a method for accessing a flash memory module, wherein the method comprises: receiving data and a corresponding metadata from a host device; performing a CRC operation upon the data to generate a CRC code; encoding the metadata and the CRC code to generate an adjusted parity code; encoding the data and the adjusted parity code to generate encoded data, wherein the encoded data comprises the data, the adjusted parity code and an error correction code corresponding to the data and the adjusted parity code; and writing the encoded data and the metadata to a page of a block of a flash memory module.
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公开(公告)号：US10884662B2
公开(公告)日：2021-01-05
申请号：US16296161
申请日：2019-03-07
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for performing storage control in a storage server may include: regarding any memory device of a plurality of memory devices installed at the storage server, assigning a channel of multiple channels within the memory device for access control corresponding to a thread of a plurality of threads running on the storage server, wherein the storage server configures the plurality of memory devices to form a RAID of the storage server; and during storing a series of logical access units (LAUs) into the RAID, writing information into respective sets of pages of the plurality of memory devices as pages in a LAU of the series of LAUs according to a predetermined arrangement rule, to make the respective sets of pages be sequentially written into the plurality of memory devices respectively with aid of the assignment of the channel of the multiple channels to the thread. Associated apparatus are provided.
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公开(公告)号：US20200379898A1
公开(公告)日：2020-12-03
申请号：US16427293
申请日：2019-05-30
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for performing access management of a memory device with aid of information arrangement and associated apparatus (e.g. the memory device and controller thereof, and an associated electronic device) are provided. The method may include: when the host device sends a write command to the memory device, utilizing the memory controller to generate a plurality of ECC chunks respectively corresponding to a plurality of sets of memory cells of the NV memory according to data, for establishing one-to-one mapping between the plurality of ECC chunks and the plurality of sets of memory cells; and utilizing the memory controller to store the plurality of ECC chunks into the plurality of sets of memory cells, respectively, to prevent any two ECC chunks of the ECC chunks from sharing a same set of memory cells of the sets of memory cells, to enhance read performance of the memory controller regarding the data.
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Patent Agency Ranking
公开(公告)号：US20200310648A1
公开(公告)日：2020-10-01
申请号：US16735709
申请日：2020-01-07
Applicant: Silicon Motion, Inc.
Inventor： Jian-Dong Du , Chia-Jung Hsiao , Tsung-Chieh Yang
Abstract: A method for use in management of a flash memory module is provided. The flash memory module has a plurality of blocks, wherein a portion of the blocks belong to a spare pool. The method includes: preserving at least one erased block in the spare pool for a write operation; monitoring an erasing period regarding the at least one erased block; and performing a replacement operation to replace the at least one erased block when the erase time exceeds a threshold.
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127.发明申请公开(公告)号：US20200265900A1
公开(公告)日：2020-08-20
申请号：US16865573
申请日：2020-05-04
Applicant: Silicon Motion, Inc.
Inventor： Tsung-Chieh Yang
Abstract: A method for reading data stored in a flash memory. The flash memory comprises a plurality of memory cells and each memory cell has a particular threshold voltage. The method includes: obtaining a first threshold voltage distribution representing threshold voltages of a first group of the memory cells; obtaining a second threshold voltage distribution representing threshold voltages of a second group of the memory cells, wherein the second threshold voltage distribution is different from the first threshold voltage distribution, and the first group of the memory cells comprises at least a part of the second group of the memory cells; and controlling the flash memory to perform at least one read operation upon the first group of the memory cells according to the second threshold voltage distribution.
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128.发明申请公开(公告)号：US20200225876A1
公开(公告)日：2020-07-16
申请号：US16732333
申请日：2020-01-01
Applicant: Silicon Motion, Inc.
Inventor： Jian-Dong Du , Pi-Ju Tsai , Tsung-Chieh Yang
Abstract: The present invention proposes a method for managing a plurality of memory units in a flash memory module. The method includes: creating a programed timestamp corresponding to each first memory unit according to a data-written time of said each first memory unit; selecting a corresponding read-retry table for performing a read operation upon said each first memory unit according to the programed timestamp of said each first memory unit; and performing a first refresh operation according to program timestamps of first memory units that have been written with data.
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129.发明授权公开(公告)号：US10574271B2
公开(公告)日：2020-02-25
申请号：US16053815
申请日：2018-08-03
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang , Sheng-I Hsu
Abstract: A data storage system includes a processing circuit, a lookup table (LUT), and a decoding circuit. The processing circuit is arranged to receive a first logical block address (LBA) from a host. The LUT is arranged to store a storage address mapping to the first LBA. The decoding circuit is arranged to utilize the storage address to read storage data from a storing circuit, and decode a first data sector in the storage data according to an error checking and correcting code in the storage data, and the first data sector at least comprises a second LBA.
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公开(公告)号：US20200026471A1
公开(公告)日：2020-01-23
申请号：US16505725
申请日：2019-07-09
Applicant: Silicon Motion Inc.
Inventor： Tsung-Chieh Yang
Abstract: The present invention provides a method for accessing a flash memory module, wherein the flash memory module comprises at least one flash memory chip, each flash memory chip comprises a plurality of blocks, each block comprises a plurality of pages, and the method comprises: sending a read command to the flash memory module to ask for data on at least one memory unit; and analyzing state information of a plurality of memory cells of the memory unit based on information from the flash memory module to determine a decoding method adopted by a decoder.
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