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公开(公告)号:US06592958B2
公开(公告)日:2003-07-15
申请号:US09863472
申请日:2001-05-24
申请人: Yuki Nakamura , Masaki Kato
发明人: Yuki Nakamura , Masaki Kato
IPC分类号: B32B302
CPC分类号: C23C14/3414 , G11B7/243 , G11B7/2534 , G11B7/2542 , G11B7/258 , G11B7/2585 , G11B7/259 , G11B2007/24308 , G11B2007/2431 , G11B2007/24314 , G11B2007/24316 , Y10T428/21
摘要: An optical recording medium is provided with a recording layer made of a phase-change recording material including Ag, In, Sb, and Te as the main constituent elements, with the respective atomic percents of a, b, c, and d thereof being in the relationship of 0.1≦a≦5, 5≦b≦13, 62≦c≦73, 22≦d≦26, and a+b+c+d≧97. Alternatively, the recording material includes the constituent elements of Ag, In, Sb, Te, and Ge, with the respective atomic percents of a, b, c, d, and e thereof being in the relationship of 0.1≦a≦5, 5≦b≦13, 62≦c≦73, 22≦d≦26, 0.3≦e≦3, and a +b+c+d+e≧97. A sputtering target for forming the recording layer is also disclosed.
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公开(公告)号:US06445669B1
公开(公告)日:2002-09-03
申请号:US09471345
申请日:1999-12-23
申请人: Kyohji Hattori , Fumiya Ohmi , Kenichi Aihara , Katsuyuki Yamada , Yuki Nakamura , Eiji Noda , Michihisa Takahashi , Yujiro Kaneko , Yukio Ide
发明人: Kyohji Hattori , Fumiya Ohmi , Kenichi Aihara , Katsuyuki Yamada , Yuki Nakamura , Eiji Noda , Michihisa Takahashi , Yujiro Kaneko , Yukio Ide
IPC分类号: G11B700
摘要: A method of initializing a phase-change optical information recording medium is provided, using an optical system incorporating a semiconductor laser device. The laser device is characterized by a specified spatial power distribution. In a spatial distribution of the laser power focused on the recording medium, in the direction perpendicular to guide tracks the laser device preferably has less average smaller in both end regions of the spatial distribution, which have each 10% of the width at half maximum of the distribution, than the average in the center region of the full width at half maximum of the distribution.
摘要翻译: 提供了一种使用包含半导体激光器件的光学系统来初始化相变光学信息记录介质的方法。 激光装置的特征在于具有特定的空间功率分布。 在聚焦在记录介质上的激光功率的空间分布中,在垂直于导轨的方向上,激光装置优选在空间分布的两个端部区域中的平均值较小,其中每个10%的宽度为半高 分布,均比中心区域的全宽度分布的半个最大值。
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公开(公告)号:US5969641A
公开(公告)日:1999-10-19
申请号:US827692
申请日:1997-04-10
申请人: Yuki Nakamura , Yoshihiko Kuwahara
发明人: Yuki Nakamura , Yoshihiko Kuwahara
IPC分类号: G01S5/04 , G01S7/51 , G01S13/86 , G01S13/91 , G01S17/88 , G01S17/89 , G07B15/00 , G08G1/017 , G08G1/04 , G06G1/00
CPC分类号: G07B15/063 , G08G1/017
摘要: A plurality of antennas receives radio wave transmitted from a vehicle which comes in a toll collection area. Each antenna has at least three antenna elements, and the antennas are disposed in the horizontal direction and vertical direction. The signal analyzer analyzes the ID signal included in the received radio wave to identify the vehicle. The direction detector measures the direction of arrival (DOA) of radio wave received by two antennas selected by the antenna selector by way of two-dimensional interferometry principle in terms of the directional angle and depression angle. The location detector calculates the location of the vehicle in the horizontal direction and the height in the vertical direction of the vehicle as a location information based on the DOA of the radio wave measured by the direction detector. The vehicle tracking unit generates the locus data of the vehicle based on the location information calculated by the location detector and the information for identifying the vehicle analyzed by the signal analyzer. On the other hand, the video camera takes a picture of the vehicle which comes in the toll collection area to obtain the picture data. The data correlation unit judges whether the vehicle is a violator vehicle by correlating the picture data and locus data. The controller registers the locus data and picture data of the vehicle if the vehicle is a violator vehicle. On the other hand, the controller collects a prescribed toll from the vehicle if the vehicle is not a violator vehicle.
摘要翻译: 多个天线接收从进入收费区域的车辆发送的无线电波。 每个天线具有至少三个天线元件,并且天线设置在水平方向和垂直方向上。 信号分析仪分析接收的无线电波中包括的ID信号以识别车辆。 方向检测器通过二维干涉测量原理在方向角和俯角方面测量由天线选择器选择的两个天线接收的无线电波的到达方向(DOA)。 位置检测器基于由方向检测器测量的无线电波的DOA,计算车辆在水平方向上的位置和车辆垂直方向上的高度作为位置信息。 车辆跟踪单元基于由位置检测器计算的位置信息和用于识别由信号分析器分析的车辆的信息来生成车辆的轨迹数据。 另一方面,摄像机拍摄来自收费区域的车辆的图像,以获得图像数据。 数据相关单元通过使图像数据和轨迹数据相关来判断车辆是否是违规车辆。 如果车辆是违规车辆,则控制器登记车辆的轨迹数据和图像数据。 另一方面,如果车辆不是违规车辆,则控制器从车辆收取规定的费用。
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公开(公告)号:US10790308B2
公开(公告)日:2020-09-29
申请号:US16131593
申请日:2018-09-14
申请人: Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
发明人: Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae , Minehide Kusayanagi
IPC分类号: H01L27/12 , H01L29/786 , H05B33/14 , H05B33/02 , G09F9/30 , H01L27/32 , H01L29/417 , H01L29/423 , G02F1/1362 , G02F1/1368 , G02F1/15
摘要: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.
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公开(公告)号:US10600916B2
公开(公告)日:2020-03-24
申请号:US15370392
申请日:2016-12-06
申请人: Yukiko Abe , Naoyuki Ueda , Shinji Matsumoto , Ryoichi Saotome , Yuki Nakamura , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
发明人: Yukiko Abe , Naoyuki Ueda , Shinji Matsumoto , Ryoichi Saotome , Yuki Nakamura , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
IPC分类号: H01L29/786 , H01L29/51 , H01L29/24 , H01L27/12 , G02F1/1368 , G09G3/36 , G09G3/3225 , G09G3/00 , H01L29/49 , H01L27/32
摘要: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.
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公开(公告)号:US10312373B2
公开(公告)日:2019-06-04
申请号:US15349211
申请日:2016-11-11
申请人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
发明人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号: G09G3/36 , G09G3/34 , H01L29/786 , H01L21/8234 , H01L27/12 , H01L21/4757 , H01L21/4763 , H01L21/02 , H01L29/66 , G02F1/1368 , H01L27/32
摘要: A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.
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公开(公告)号:US20190157313A1
公开(公告)日:2019-05-23
申请号:US16255035
申请日:2019-01-23
申请人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
发明人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号: H01L27/12 , H01L29/786
摘要: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.
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公开(公告)号:US20170186626A1
公开(公告)日:2017-06-29
申请号:US15376895
申请日:2016-12-13
申请人: Minehide KUSAYANAGI , Naoyuki Ueda , Yuki Nakamura , Yukiko ABE , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
发明人: Minehide KUSAYANAGI , Naoyuki Ueda , Yuki Nakamura , Yukiko ABE , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Sadanori Arae
IPC分类号: H01L21/44 , H01L29/24 , H01L21/477 , H01L29/45 , H01L29/66 , H01L29/786
CPC分类号: H01L21/44 , H01L21/477 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/7869
摘要: A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.
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129.
公开(公告)号:US20170162601A1
公开(公告)日:2017-06-08
申请号:US15369678
申请日:2016-12-05
申请人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
发明人: Sadanori Arae , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Ryoichi Saotome , Minehide Kusayanagi
IPC分类号: H01L27/12 , H01L29/49 , G09G3/20 , H01L29/786
CPC分类号: H01L27/1218 , H01L29/78603
摘要: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.
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公开(公告)号:US20170116916A1
公开(公告)日:2017-04-27
申请号:US15289243
申请日:2016-10-10
申请人: Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
发明人: Ryoichi Saotome , Naoyuki Ueda , Yuki Nakamura , Yukiko Abe , Shinji Matsumoto , Yuji Sone , Sadanori Arae , Minehide Kusayanagi
IPC分类号: G09G3/3225 , G09G3/34 , H01L27/12
CPC分类号: G09G3/3225 , G09G3/3406 , G09G3/344 , G09G3/348 , G09G3/3648 , G09G2300/0417 , G09G2310/0264 , H01L21/823462 , H01L27/1225 , H01L27/1237 , H01L27/124 , H01L29/4908 , H01L29/7869
摘要: A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.
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