利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

141 条记录 (耗时 0.019 秒)

    T-gate forming method for high electron mobility transistor and gate structure thereof
    131.
    发明授权
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构

    公开(公告)号：US07932540B2

    公开(公告)日：2011-04-26

    申请号：US11700946

    申请日：2007-02-01

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

    摘要翻译： 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    134.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    显示装置及其制造方法

    公开(公告)号：US20100265238A1

    公开(公告)日：2010-10-21

    申请号：US12762470

    申请日：2010-04-19

    申请人： Jae-Hoon LEE ,  Yong-Soon LEE ,  Young-Su KIM ,  Yu-Han BAE

    发明人： Jae-Hoon LEE ,  Yong-Soon LEE ,  Young-Su KIM ,  Yu-Han BAE

    IPC分类号： G06F3/038 ,  H01J9/00

    CPC分类号： G09G3/3614 ,  G09G3/3607 ,  G09G2300/0426 ,  G09G2320/0209

    摘要： A display device includes a display panel, a data driving part and a gate driving part. The display panel includes a first pixel row. The first pixel row includes a first pixel connected to an (n+1)-th gate line and an (m+1)-th data line (where ‘n’ and ‘m’ are natural numbers), and a second pixel connected to an n-th gate line and an (m+2)-th data line. The data driving part applies a data voltage having a first polarity with respect to a reference voltage to the (m+1)-th data line, and applies a data voltage having a second polarity with respect to the reference voltage to the (m+2)-th data line. The gate driving part sequentially applies a gate signal to the n-th gate line and the (n+1)-th gate line.

    摘要翻译： 显示装置包括显示面板，数据驱动部和门驱动部。 显示面板包括第一像素行。 第一像素行包括连接到第（n + 1）栅极线和第（m + 1）数据线（其中'n'和'm'是自然数）的第一像素，并且第二像素连接 到第n个栅极线和第（m + 2）个数据线。 数据驱动部分对第（m + 1）数据线施加相对于参考电压具有第一极性的数据电压，并将相对于参考电压具有第二极性的数据电压施加到第（m + 2）数据线。 栅极驱动部分顺序地对第n条栅极线和第（n + 1）栅极线施加栅极信号。

    Electronic apparatus having a display device
    135.
    发明申请
    Electronic apparatus having a display device 有权
    具有显示装置的电子设备

    公开(公告)号：US20080309842A1

    公开(公告)日：2008-12-18

    申请号：US11987392

    申请日：2007-11-29

    申请人： Young-Su Kim

    发明人： Young-Su Kim

    IPC分类号： G02F1/1333 ,  H05K5/02

    CPC分类号： G06F1/1698 ,  G02F1/133308 ,  G02F2001/133325 ,  G06F1/1616 ,  G06F1/1637

    摘要： An electronic apparatus having a display device and method of manufacturing are disclosed, and particularly, an electronic apparatus of reduced size by having a front cover having a first cut-out portion; a rear cover having a second cut-out portion, wherein the front cover and the rear cover are joined together to house the flat display panel therebetween such that first and second cut-out portions are aligned to form a groove; and at least one antenna in the groove.

    摘要翻译： 公开了一种具有显示装置和制造方法的电子设备，特别地，涉及具有第一切口部分的前盖的尺寸减小的电子设备; 具有第二切口部分的后盖，其中所述前盖和所述后盖接合在一起以将所述平面显示面板容纳在其间，使得第一和第二切口部分对准以形成凹槽; 以及槽中的至少一个天线。

    Apparatus and Method for Selecting Optimal Signal Using Auxiliary Equalization in Diversity Receiver
    136.
    发明申请
    Apparatus and Method for Selecting Optimal Signal Using Auxiliary Equalization in Diversity Receiver 失效
    在分集接收机中使用辅助均衡选择最优信号的装置和方法

    公开(公告)号：US20080291336A1

    公开(公告)日：2008-11-27

    申请号：US12096641

    申请日：2006-11-07

    申请人： Ju-Yeun Kim ,  Young-Su Kim ,  Jae-Hwui Bae ,  Hyun Lee ,  Jong-Soo Lim ,  Soo-In Lee

    发明人： Ju-Yeun Kim ,  Young-Su Kim ,  Jae-Hwui Bae ,  Hyun Lee ,  Jong-Soo Lim ,  Soo-In Lee

    IPC分类号： H04B7/08

    CPC分类号： H04B7/0814 ,  H04L25/03012 ,  H04L2025/03426 ,  H04L2025/03535

    摘要： Provided are an apparatus and method for selecting an optimal signal using auxiliary equalization in a diversity receiver. The optimal signal selecting apparatus includes: a plurality of sync recovery units for extracting sync information from baseband signals, which are candidate signals, except a baseband signal selected as a current optimal signal a plurality of auxiliary equalizers for channel-equalizing the candidate signals based on the extracted sync information; a plurality of SNR measuring units for measuring signal-to-noise ratios (SNRs) of the candidate signals inputted to the auxiliary equalizers and the candidates signals equalized in the auxiliary equalizers; and an optimal signal selector for selecting an optimal candidate signal from the candidate signals by using the extracted sync information and the measured SNRs, and replacing the optimal signal with the optimal candidate signal when reception quality of the current optimal signal is poor.

    摘要翻译： 提供了一种用于在分集接收机中使用辅助均衡来选择最佳信号的装置和方法。 最佳信号选择装置包括：多个同步恢复单元，用于从作为候选信号的基带信号中提取同步信息，除了选择为当前最优信号的基带信号，多个辅助均衡器，用于对候选信号进行信道均衡，基于 提取的同步信息; 多个SNR测量单元，用于测量输入到辅助均衡器的候选信号的信噪比（SNR）和在辅助均衡器中均衡的候选信号; 以及最优信号选择器，用于通过使用所提取的同步信息和测量的SNR从候选信号中选择最佳候选信号，并且当当前最佳信号的接收质量差时，用最佳候选信号替换最佳信号。

    T-gate forming method for high electron mobility transistor and gate structure thereof
    139.
    发明申请
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构

    公开(公告)号：US20080108188A1

    公开(公告)日：2008-05-08

    申请号：US11700946

    申请日：2007-02-01

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

    摘要翻译： 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

    Metal window filter assembly using non-radiative dielectric waveguide
    140.
    发明授权
    Metal window filter assembly using non-radiative dielectric waveguide 失效
    金属窗过滤组件采用非辐射介质波导

    公开(公告)号：US06600392B2

    公开(公告)日：2003-07-29

    申请号：US09983084

    申请日：2001-10-23

    申请人： Young Su Kim ,  Young Geun Yoo

    发明人： Young Su Kim ,  Young Geun Yoo

    IPC分类号： H01P1208

    CPC分类号： H01P11/007 ,  H01P1/2002 ,  H01P11/006

    摘要： Disclosed is a metal window filter assembly, of a millimeter wave band, using an NRD guide. The filter assembly comprises a filter housing including parallel conductive plates and a filter for filtering a certain frequency band of an electromagnetic wave traveling therethrough. The filter includes a plurality of polygonal metal windows and a single body type dielectric line made from a non-radiative dielectric. A plurality of polygonal inserting grooves spaced by the predetermined distance are formed respectively on both surfaces of the dielectric line making contact with the parallel conductive plates. The metal windows are inserted in the inserting grooves one to one to form multi-staged dielectric resonators cascaded as a single body. The filter has a filtering function selectively passing the certain frequency band determined by an impedance coupling relationship that the multi-staged dielectric resonators have with respect to the electromagnetic wave. The filter assembly is suitable for a commercial use due to its simple structure, a small loss and superiority in processing, assembly and productivity.

    摘要翻译： 公开了使用NRD引导件的毫米波段的金属窗过滤器组件。 过滤器组件包括：过滤器壳体，其包括平行的导电板和用于过滤通过其传播的电磁波的某个频带的滤波器。 过滤器包括多个多边形金属窗口和由非辐射电介质制成的单体型介质线。 分别在与平行导电板接触的介质线的两个表面上分别形成间隔预定距离的多个多边形插入槽。 金属窗一一对插入插槽，形成作为单体级联的多级介质谐振器。 滤波器具有选择性地通过由多级介质谐振器相对于电磁波具有的阻抗耦合关系确定的某个频带的滤波功能。 过滤器组件由于其结构简单，损耗小，加工，组装和生产率优越，因此适用于商业用途。