公开(公告)号：US20120049295A1

公开(公告)日：2012-03-01

申请号：US12862048

申请日：2010-08-24

申请人： Geng Wang ,  Joseph Ervin ,  Jeffrey B. Johnson ,  Paul C. Parries

发明人： Geng Wang ,  Joseph Ervin ,  Jeffrey B. Johnson ,  Paul C. Parries

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L21/2652 ,  H01L29/78696

摘要： The present disclosure provides a semiconductor device that may include a substrate including a semiconductor layer overlying an insulating layer. A gate structure that is present on a channel portion of the semiconductor layer. A first dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the first dopant region is present within the lower portion of the gate conductor and the upper portion of the semiconductor layer. A second dopant region is present in the channel portion of the semiconductor layer, in which the peak concentration of the second dopant region is present within the lower portion of the semiconductor layer.

公开(公告)号：US20120196413A1

公开(公告)日：2012-08-02

申请号：US13432544

申请日：2012-03-28

申请人： Xiangdong Chen ,  Geng Wang ,  Da Zhang

发明人： Xiangdong Chen ,  Geng Wang ,  Da Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/1083 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/78

摘要： A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions.

摘要翻译： 一种方法和结构在衬底内注入第一种杂质以在衬底内邻近衬底的顶表面形成沟道区; 在通道区域上方的衬底的顶表面上形成栅极堆叠; 并且在所述衬底内注入第二类型杂质以在所述衬底内邻近所述顶表面形成源区和漏区。 沟道区域位于源区和漏区之间。 第二种杂质相对于第一种杂质具有相反的极性。 所述方法和结构相对于沟道区域内的第一类型杂质的浓度注入更大浓度的第一类型杂质，以在衬底下方（相对于顶表面）在通道内形成主体掺杂区域 地区; 并且在源极和漏极区域之下（相对于顶表面）下方的衬底内形成辅助体掺杂区域。

公开(公告)号：US20110023071A1

公开(公告)日：2011-01-27

申请号：US12892608

申请日：2010-09-28

申请人： Jincheng Li ,  Dongming Zhu ,  Jianfeng Zhong ,  Geng Wang ,  Xiao Wang ,  Shumin Cheng

发明人： Jincheng Li ,  Dongming Zhu ,  Jianfeng Zhong ,  Geng Wang ,  Xiao Wang ,  Shumin Cheng

IPC分类号： H04N7/173 ,  G06F15/16

CPC分类号： H04L65/1033 ,  H04L65/1016 ,  H04L65/1069 ,  H04L65/4084 ,  H04L65/608

摘要： A method, a system, and an apparatus for creating a Content-on-Demand (CoD) service are disclosed herein. The method includes receiving a Session Initiation Protocol (SIP) service request sent by a User Equipment (UE); converting the SIP service request into a Real-Time Streaming Protocol (RTSP) service request, and sending the RTSP service request to a server; receiving an RTSP service response sent by the server; and converting the RTSP service response into a SIP service response, and sending the SIP service response to the UE to create the CoD service between the UE and the server.

摘要翻译： 本文公开了一种用于创建内容点播（CoD）服务的方法，系统和装置。 该方法包括接收由用户设备（UE）发送的会话发起协议（SIP）服务请求; 将SIP服务请求转换为实时流协议（RTSP）服务请求，并将RTSP服务请求发送到服务器; 接收由服务器发送的RTSP服务响应; 并将RTSP服务响应转换成SIP服务响应，并向UE发送SIP服务响应以在UE与服务器之间创建CoD服务。

公开(公告)号：US07262451B2

公开(公告)日：2007-08-28

申请号：US10541660

申请日：2003-01-08

申请人： Jack A. Mandelman ,  Jeffrey P. Gambino ,  Geng Wang

发明人： Jack A. Mandelman ,  Jeffrey P. Gambino ,  Geng Wang

IPC分类号： H01L27/108

CPC分类号： H01L27/10894 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/3081 ,  H01L27/10864

摘要： Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.

摘要翻译： 半导体器件制造在同一衬底的应变层区域和无应变层的层中。 第一半导体器件，例如存储器单元，例如 在衬底的无应变层的区域中形成深沟槽存储单元。 在相同的衬底中选择性地形成应变层区域。 第二半导体器件（66,68,70），例如FET，例如， 一个MOSFET逻辑器件，形成在应变层区域中。

公开(公告)号：US07212000B2

公开(公告)日：2007-05-01

申请号：US10698866

申请日：2003-10-30

申请人： Geng Wang ,  Sang Lee

发明人： Geng Wang ,  Sang Lee

IPC分类号： G01B7/00

CPC分类号： G11B27/36 ,  G11B20/1816 ,  G11B2220/2516

摘要： A method and apparatus for detecting a defective disk for a hard disk drive. The method includes placing a disk into a tester so that a first side of the disk is adjacent to a first head of the tester and a second side of the disk is adjacent to a second head. First data is read from the first side of the disk, and second data is read from the second side of the disk. The disk is then flipped so that the second side is adjacent to the first head and the first side is adjacent to the second head. Third data is read from the first side. Fourth data is read from the second side. A first area between a curve generated from the first data and a curve generated from the third data is calculated. Likewise, a second area is calculated between a curve generated from the second data and a curve generated from the fourth data. An average of the first and second areas is then calculated and used to detect a defective disk.

摘要翻译： 一种用于检测用于硬盘驱动器的有缺陷的盘的方法和装置。 该方法包括将盘放入测试器中，使得盘的第一侧与测试器的第一头相邻，并且盘的第二侧与第二头相邻。 从盘的第一侧读取第一数据，从盘的第二侧读取第二数据。 然后将盘翻转，使得第二侧与第一头相邻，并且第一侧与第二头相邻。 从第一侧读取第三数据。 从第二侧读取第四数据。 计算从第一数据生成的曲线与从第三数据生成的曲线之间的第一区域。 类似地，在从第二数据产生的曲线和从第四数据生成的曲线之间计算第二区域。 然后计算第一和第二区域的平均值，并用于检测有缺陷的盘。

公开(公告)号：US20070051996A1

公开(公告)日：2007-03-08

申请号：US11553072

申请日：2006-10-26

申请人： Xiangdong Chen ,  Geng Wang ,  Yujun Li ,  Qiqing Ouyang

发明人： Xiangdong Chen ,  Geng Wang ,  Yujun Li ,  Qiqing Ouyang

IPC分类号： H01L29/94

CPC分类号： H01L29/66181 ,  H01L27/10864

摘要： A vertical pass transistor used in a DRAM cell for maintaining a low total leakage current and providing adequate drive current is described together with a method of fabricating such a device. The transistor gate is engineered in lieu of the channel. The vertical pass transistor for the DRAM cell incorporates two gate materials having different work functions. The gate material near the storage node is n-type doped polysilicon. The gate material near the bit line diffusion is made of silicide or metal having a higher work function than the n-polysilicon. The novel device structure shows several advantages: the channel doping is reduced while maintaining a high Vt and a low sub-threshold leakage current; the carrier mobility improves with the reduced channel doping; the body effect of the device is reduced which improves the write back current; and the sub-threshold swing is reduced because of the low channel doping.

摘要翻译： 在DRAM单元中使用的用于保持低总漏电流并提供足够的驱动电流的垂直传输晶体管与制造这种器件的方法一起被描述。 晶体管栅极被设计代替通道。 用于DRAM单元的垂直传输晶体管包括具有不同功函数的两个栅极材料。 存储节点附近的栅极材料为n型掺杂多晶硅。 位线扩散附近的栅极材料由具有比n-多晶硅更高的功函数的硅化物或金属制成。 该新颖的器件结构显示出几个优点：沟道掺杂减少，同时保持高Vt和低的亚阈值漏电流; 载流子迁移率随着沟道掺杂的降低而提高; 减少了器件的体效，提高了回写电流; 并且由于低通道掺杂，子阈值摆幅减小。

公开(公告)号：US20060258060A1

公开(公告)日：2006-11-16

申请号：US11487809

申请日：2006-07-17

申请人： Xiangdong Chen ,  Dureseti Chidambarrao ,  Geng Wang

发明人： Xiangdong Chen ,  Dureseti Chidambarrao ,  Geng Wang

IPC分类号： H01L21/339

CPC分类号： H01L27/10864 ,  H01L27/0214 ,  H01L27/10841

摘要： A novel transistor structure for a DRAM cell includes two deep trenches, one trench including a vertical storage cell for storing the data and the second trench including a vertical control cell for controlling the p-well voltage, which, in effect, places part of the p-well in a floating condition thus decreasing the threshold voltage as compared to when the vertical pass transistor is in an off-state. This enables the transistor to exhibit increased gate over-drive and drive current during an active wordline voltage commonly applied to both gates of the storage and control cells.

摘要翻译： 用于DRAM单元的新型晶体管结构包括两个深沟槽，一个沟槽包括用于存储数据的垂直存储单元，第二沟槽包括用于控制p阱电压的垂直控制单元，其实际上将部分 p阱处于浮置状态，从而与垂直传输晶体管处于截止状态时相比降低阈值电压。 这使得晶体管在通常施加到存储和控制单元的两个门的有效字线电压期间表现出增加的栅极过驱动和驱动电流。

公开(公告)号：US07089649B2

公开(公告)日：2006-08-15

申请号：US10256553

申请日：2002-09-26

申请人： Geng Wang ,  Hae Jung Lee ,  Keung Youn Cho ,  Sang Lee

发明人： Geng Wang ,  Hae Jung Lee ,  Keung Youn Cho ,  Sang Lee

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3136 ,  G11B5/012 ,  G11B5/455 ,  G11B5/4806 ,  G11B5/4833 ,  G11B5/484 ,  Y10T29/49025 ,  Y10T29/49027 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49036

摘要： Thermal pole tip protrusion is caused by materials in and around head slider expanding during write operations till they protrude, leading to contact with the rotating disk surface, altering the flying height and often wearing down part of the disk surface. While well known that read-write heads expand during writing, the inventors who recognized this situation's significance, particularly as flying height decreases and data rates increase, both required for high areal density disk drives. The inventors realized that they could detect the problem at the spin stand level by testing head gimbal assemblies to reliably, and inexpensively, predict the tendency for thermal pole tip protrusion. This leads to selection of head gimbal assemblies, which do not have the thermal pole tip protrusion tendency. The selected head gimbal assemblies have better reliability, as do actuators and disk drives made with the selected head gimbal assemblies.

摘要翻译： 热敏头尖突起由写入操作期间头部滑块内和周围的材料引起，直到它们突出，导致与旋转盘表面接触，改变飞行高度并经常磨损盘表面的一部分。 虽然众所周知，读写头在写入期间扩展，但是认识到这种情况的重要性的发明人，特别是当高密度磁盘驱动器都需要飞行高度降低和数据速率增加时。 本发明人意识到，它们可以通过测试头万向架组件可靠且廉价地预测热极尖端突起的趋势来检测旋转台水平的问题。 这导致了不具有热极尖突起倾向的头万向节组件的选择。 所选择的头万向架组件具有更好的可靠性，与使用所选择的头万向架组件制造的致动器和磁盘驱动器一样。

公开(公告)号：US20060024877A1

公开(公告)日：2006-02-02

申请号：US10541660

申请日：2003-01-08

申请人： Jack Mandelman ,  Jeffrey Gambino ,  Geng Wang

发明人： Jack Mandelman ,  Jeffrey Gambino ,  Geng Wang

IPC分类号： H01L21/8238

CPC分类号： H01L27/10894 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/3081 ,  H01L27/10864

摘要： Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e.g. an MOSFET logic device, is formed in the strained layer region.

摘要翻译： 半导体器件制造在同一衬底的应变层区域和无应变层的层中。 第一半导体器件，例如存储器单元，例如 在衬底的无应变层的区域中形成深沟槽存储单元。 在相同的衬底中选择性地形成应变层区域。 第二半导体器件（66,68,70），例如FET，例如， 一个MOSFET逻辑器件，形成在应变层区域中。

公开(公告)号：US09898177B2

公开(公告)日：2018-02-20

申请号：US13824832

申请日：2011-09-21

申请人： Geng Wang ,  Ran Sun

发明人： Geng Wang ,  Ran Sun

IPC分类号： G06F3/00 ,  G06F3/0484 ,  G06F3/0482 ,  G06F3/0488

CPC分类号： G06F3/04845 ,  G06F3/0482 ,  G06F3/04842 ,  G06F3/04883 ,  G06F2203/04104

摘要： A display processing method that is applied in a portable mobile terminal, to display multiple objects on a touch screen of the portable mobile terminal. The method includes obtaining a touch point that is a point created when an operating object contacts/almost touches the touch screen; determining a preset area with the touch point being the center; determining a first object and a second object, among multiple objects, each intersecting with the preset area on at least one point; determining a first information of the movement of the first object, the first information indicating moving the first object from a first position to a second position, the first position being the original position of the first object displayed on the touch screen; and moving the first object from the first position to the second position according to the first information.