利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

166 条记录 (耗时 0.025 秒)

    RADIATION DETECTION APPARATUS AND RADIATION DETECTION SYSTEM
    131.
    发明申请
    RADIATION DETECTION APPARATUS AND RADIATION DETECTION SYSTEM 有权
    辐射检测装置和辐射检测系统

    公开(公告)号：US20120126128A1

    公开(公告)日：2012-05-24

    申请号：US13296053

    申请日：2011-11-14

    申请人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Minoru Watanabe ,  Chiori Mochizuki ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01T1/208 ,  G01T1/20

    CPC分类号： G01T1/2002 ,  G01T1/2928 ,  H01L27/00 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14663 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radiation detection apparatus includes a scintillator, a photoelectric conversion unit, and a grid for removing scattered radiation. The photoelectric conversion unit includes a plurality of pixels arranged in a two-dimensional array on a substrate. Each pixel is configured to convert visible light output from the scintillator into an electric signal. The grid, the substrate, the photoelectric conversion unit, and the scintillator are disposed in this order from a radiation-incident side of the radiation detection apparatus to an opposite side thereof. In this radiation detection apparatus in which the scintillator is disposed on the side opposite to the radiation-incident side, scattered radiation is effectively removed.

    摘要翻译： 辐射检测装置包括闪烁体，光电转换单元和用于去除散射辐射的栅格。 光电转换单元包括在基板上以二维阵列排列的多个像素。 每个像素被配置为将从闪烁体输出的可见光转换成电信号。 栅格，衬底，光电转换单元和闪烁体以从放射线检测装置的辐射入射侧到其相反侧的顺序设置。 在其中闪烁体设置在与辐射入射侧相反的一侧的该放射线检测装置中，有效地去除了散射的辐射。

    Matrix substrate, detection device, detection system, and method for driving detection device
    135.
    发明授权
    Matrix substrate, detection device, detection system, and method for driving detection device 有权
    矩阵基板，检测装置，检测系统和驱动检测装置的方法

    公开(公告)号：US08822939B2

    公开(公告)日：2014-09-02

    申请号：US13323187

    申请日：2011-12-12

    申请人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01G5/00 ,  H01L27/146 ,  G09G3/36

    CPC分类号： H01L27/14663 ,  G09G3/3659

    摘要： A matrix substrate which realizes high operation speed and high reliability and which is capable of obtaining a high-quality image while the number of connection terminals is limited is provided. The matrix substrate includes pixels arranged in a matrix, N driving lines arranged in a row direction, P connection terminals where P is less than N, a demultiplexer which is disposed between the connection terminals and the driving lines and which includes first polycrystalline semiconductor TFTs and first connection terminals. The demultiplexer further includes second polycrystalline semiconductor TFTs and the second control lines used to maintain the driving lines to have non-selection voltages which bring the pixels to non-selection states between one of the connection terminals and two or more of the driving lines.

    摘要翻译： 提供实现高操作速度和高可靠性并且能够在连接端子数量受限的同时获得高质量图像的矩阵基板。 矩阵基板包括排列成矩阵的像素，排列成行方向的N个驱动线，P小于N的P个连接端子，配置在连接端子与驱动线之间并且包括第一多晶半导体TFT的多路分离器， 第一连接端子。 解复用器还包括第二多晶半导体TFT和第二控制线，其用于将驱动线保持为具有非选择电压，这些非选择电压将像素连接到一个连接端子和两个或更多个驱动线之间的非选择状态。

    Radiation detection apparatus and detection system including same
    136.
    发明授权
    Radiation detection apparatus and detection system including same 有权
    辐射检测装置及其检测系统

    公开(公告)号：US08680478B2

    公开(公告)日：2014-03-25

    申请号：US13544105

    申请日：2012-07-09

    申请人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Masato Ofuji ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Jun Kawanabe ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01J1/42 ,  G01T1/00 ,  H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/3765 ,  H01L27/14609 ,  H01L27/14663 ,  H01L27/14692 ,  H04N5/32

    摘要： A detection apparatus includes a driving circuit unit in which a plurality of unit circuits each including a first circuit that supplies conducting voltage of a switch element of a pixel based on voltage included in a clock signal to a driving wire in accordance with an initiation signal and a second circuit that supplies non-conducting voltage of the switch element to the driving wire in accordance with a termination signal are provided for the plurality of corresponding driving wires and a control unit that supplies the clock signal to the driving circuit unit. The control unit supplies control voltage to the plurality of unit circuits, and each of the plurality of unit circuits further includes a third circuit that continues to supply the non-conducting voltage to the corresponding driving wire in accordance with the control voltage.

    摘要翻译： 检测装置包括驱动电路单元，其中多个单元电路各自包括第一电路，该第一电路根据启动信号将基于时钟信号中包含的电压的像素的开关元件的导通电压提供给驱动线， 为多个相应的驱动线提供了根据终止信号将开关元件的非导通电压提供给驱动线的第二电路，以及将时钟信号提供给驱动电路单元的控制单元。 控制单元向多个单元电路提供控制电压，并且多个单元电路中的每一个还包括第三电路，其继续根据控制电压向相应的驱动线提供非导通电压。

    Detection device manufacturing method using impurity semiconductor layer in arrayed pixels
    137.
    发明授权
    Detection device manufacturing method using impurity semiconductor layer in arrayed pixels 有权
    在阵列像素中使用杂质半导体层的检测器件制造方法

    公开(公告)号：US08586399B2

    公开(公告)日：2013-11-19

    申请号：US13477401

    申请日：2012-05-22

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1461 ,  H01L27/1462 ,  H01L27/14676 ,  H01L27/14685 ,  H01L27/14692

    摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

    摘要翻译： 在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和 电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件 形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差 孔。

    DETECTION APPARATUS AND DETECTION SYSTEM
    139.
    发明申请
    DETECTION APPARATUS AND DETECTION SYSTEM 有权
    检测装置和检测系统

    公开(公告)号：US20130099093A1

    公开(公告)日：2013-04-25

    申请号：US13610472

    申请日：2012-09-11

    申请人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    发明人： Jun Kawanabe ,  Chiori Mochizuki ,  Minoru Watanabe ,  Masato Ofuji ,  Keigo Yokoyama ,  Kentaro Fujiyoshi ,  Hiroshi Wayama

    IPC分类号： G01J1/44 ,  H01L27/00

    CPC分类号： H01L27/14609 ,  H01L27/14665

    摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.

    摘要翻译： 检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆 连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地 向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。 以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

    METHOD FOR MANUFACTURING DETECTOR, RADIATION DETECTION APPARATUS INCLUDING DETECTOR MANUFACTURED THEREBY, AND RADIATION DETECTION SYSTEM
    140.
    发明申请
    METHOD FOR MANUFACTURING DETECTOR, RADIATION DETECTION APPARATUS INCLUDING DETECTOR MANUFACTURED THEREBY, AND RADIATION DETECTION SYSTEM 审中-公开
    用于制造检测器的方法，包括其制造的检测器的辐射检测装置和辐射检测系统

    公开(公告)号：US20120261581A1

    公开(公告)日：2012-10-18

    申请号：US13444560

    申请日：2012-04-11

    申请人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

    发明人： Kentaro Fujiyoshi ,  Chiori Mochizuki ,  Minoru Watanabe ,  Keigo Yokoyama ,  Masato Ofuji ,  Jun Kawanabe ,  Hiroshi Wayama

    IPC分类号： G01T1/20 ,  H01L31/18

    CPC分类号： H01L27/14632 ,  H01L27/14687

    摘要： A method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.

    摘要翻译： 提供了一种用于制造高性能平面型检测器的方法，而不增加成本或随着掩模数量的增加而产量降低。 该方法包括从沉积在基板上的第一导电膜形成第一电极和控制电极的第一步骤，在第一步骤之后依次沉积绝缘膜和半导体膜的第二步骤，第三步骤 杂质半导体膜和第二导电膜，并且从第二导电膜形成公共电极线和第一导电构件，第四步骤，用相同的掩模形成第二电极和第二导电膜 来自在第三步骤之后形成的透明导电氧化物膜的导电构件和来自杂质半导体膜的杂质半导体层。