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    SENSOR ELEMENT AND GAS SENSOR
    142.
    发明公开
    SENSOR ELEMENT AND GAS SENSOR 审中-公开

    公开(公告)号：US20230168222A1

    公开(公告)日：2023-06-01

    申请号：US18153009

    申请日：2023-01-11

    Applicant: NGK INSULATORS, LTD.

    Inventor： Daichi ICHIKAWA

    IPC: G01N27/41 ,  G01N27/407

    CPC classification number: G01N27/41 ,  G01N27/4076

    Abstract: A sensor element according to the present invention includes an element body having a measurement-object gas flow section into which an exhaust gas is introduced, an adjustment pump cell including a measurement-object-gas-side electrode disposed in a portion exposed to the exhaust gas on an outer side of the element body, the adjustment pump cell being configured to adjust an oxygen concentration in an oxygen concentration adjustment chamber included in the measurement-object gas flow section, a measurement electrode disposed in a measurement chamber located downstream of the oxygen concentration adjustment chamber, and a reference electrode into which a reference gas is introduced. The measurement-object-gas-side electrode has an Au/(Pt+Au) ratio (=an area of a portion where Au is exposed/an area of a portion where Au and Pt are exposed) 0.2-0.7, the Au/(Pt+Au) ratio being measured by using XPS.

    Sensor
    145.
    发明授权
    Sensor 有权

    公开(公告)号：US11656151B2

    公开(公告)日：2023-05-23

    申请号：US17699836

    申请日：2022-03-21

    Applicant: NGK Insulators, Ltd.

    Inventor： Yusuke Watanabe ,  Shotaro Niizuma ,  Hayami Aota ,  Toshihiro Hirakawa ,  Kirari Takahashi

    IPC: G01M15/10 ,  F01N13/00

    CPC classification number: G01M15/102 ,  F01N13/008 ,  F01N2560/026 ,  F01N2560/20

    Abstract: The probability of a heater portion of a sensor element being exposed to water is lowered. The sensor element includes a built-in heater that extends in a longitudinal direction and a surrounding housing extending in the longitudinal direction. The heater includes a heat generation portion and a lead portion. The heat generation portion has a front end and a rear end, and is positioned on the same side as a front end portion side of the sensor element. The housing includes an enlarged diameter portion having a diameter of an inner wall that increases in a direction toward the front end of the sensor. The enlarged diameter portion includes a front end portion and a rear end portion. The rear end of the heat generation portion is located closer to the front end of the sensor than the rear end portion of the enlarged diameter portion is.

    WAFER PLACEMENT TABLE
    146.
    发明公开
    WAFER PLACEMENT TABLE 审中-公开

    公开(公告)号：US20230144107A1

    公开(公告)日：2023-05-11

    申请号：US17818748

    申请日：2022-08-10

    Applicant: NGK Insulators, Ltd.

    Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Ikuhisa MORIOKA

    IPC: H01L21/687 ,  H01L21/67

    CPC classification number: H01L21/68757 ,  H01L21/67109

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base having a refrigerant flow channel, and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a distance from a ceiling surface of the refrigerant flow channel to the wafer placement surface at a most downstream part of the refrigerant flow channel is shorter than the distance at a most upstream part of the refrigerant flow channel.

    SENSOR ELEMENT
    148.
    发明申请
    SENSOR ELEMENT 有权

    公开(公告)号：US20230125474A1

    公开(公告)日：2023-04-27

    申请号：US17950631

    申请日：2022-09-22

    Applicant: NGK INSULATORS, LTD.

    Inventor： Ryo ONISHI ,  Kaoru SHIBUTANI

    IPC: G01N27/409 ,  G01N33/00 ,  G01N27/407

    Abstract: A sensor element for detecting a target gas to be measured in a measurement-object gas includes: an element body including an oxygen-ion-conductive solid electrolyte layer; and a protective layer covering at least a part of a surface of the element body. The protective layer includes a porous material that has a pore inside; and, in the pore in the protective layer, a ratio (Lt/Lf) of a pore length (Lt) in a thickness direction perpendicular to the surface of the element body to a pore length (Lf) in a surface direction perpendicular to the thickness direction is 0.6 to 0.9.

    WAFER PLACEMENT TABLE
    149.
    发明申请
    WAFER PLACEMENT TABLE 有权

    公开(公告)号：US20230122013A1

    公开(公告)日：2023-04-20

    申请号：US17813643

    申请日：2022-07-20

    Applicant: NGK Insulators, Ltd.

    Inventor： Seiya INOUE ,  Tatsuya KUNO

    IPC: H01J37/32 ,  H01L21/683

    Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.

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